• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.590-594
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• 2013

Semiconductor CdSe nanowires (NWs) can serve as model systems for investigating the physical properties of one-dimensional (1D) nanostructures and have great potential for applications in electronics and photonic nanodevices. With numerous attractions arisen from their physical properties, CdSe NWs have been synthesized by vapor-liquid-solid (VLS) methods, but they have some limitations of high reaction temperature and low production. Here, we synthesized CdSe NWs via the solution-liquid-solid (SLS) mechanisms using bismuth (Bi) covered substrates as a low-melting point catalyst and compared the products after injecting identical amount of Se and different amount of tributylphosphine (TBP). CdSe NWs have similar diameters but longer lengths with decreasing TBP, so we proposed the role of TBP as a solvent and capping agent of Se.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.307-311
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• 2011

Solid solutions of the (1-x)$BiFeO_3-xSrTiO_3$ ceramic system (x = 0~0.4) are explored here in attempts to obtain multiferroic properties in these systems. The polarization-electric field hysteresis, magnetization-magnetic field curves, and dielectric properties are also characterized. This solid-solution system shows a crystal structural transition from a noncentrosymmetric (R3c) structure to a centrosymmetric (Pm-3m) structure at 0.3 < x < 0.4. The solid solution ceramic shows unsaturated M-H behavior and low remanent magnetization over the composition region of 0.1 ${\leq}$ x ${\leq}$ 0.3. The $0.7BiFeO_3-0.3SrTiO_3$ system shows the largest value of $M_s$ at 0.17 emu/g and the smallest value of $H_c$ at 1.06 kOe. The P-E hysteresis curves were not saturated under an electric field as high as E = 70 kV/cm. This system is considered to have multiferroic characteristics in the composition range of 0.1 ${\leq}$ x ${\leq}$ 0.3.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.35-40
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• 2006

This paper shows that the effect of exposing on the top area and a solution which using a water circulation system. Semiconductor substrate stage is made from Aluminum and is repeated the sequence of exposing (150), turning OFF shutter, taking 30 sec. interval at the top area of stage. So the temperature of substrate temperature rises continuously. On this, we made a waterway at the inner part of the substrate stage and operated a water circulation system. We measured the temperature of a substrate stage surface with a thermocouple attached to the substrate stage. To analyze the top area's temperature, we used Analysis Program ANSYS for analysis and 3D CAD program Solid-Works for modeling.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.24-29
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• 2001

GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

• Ocean Systems Engineering
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• v.13 no.2
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• pp.123-146
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• 2023

In this paper, Moore-Gibson-Thompson theory of thermoelasticity is considered to investigate the fundamental solution and vibration of plane wave in an isotropic photothermoelastic solid. The governing equations are made dimensionless for further investigation. The dimensionless equations are expressed in terms of elementary functions by assuming time harmonic variation of the field variables (displacement, temperature distribution and carrier density distribution). Fundamental solutions are constructed for the system of equations for steady oscillation. Also some preliminary properties of the solution are explored. In the second part, the vibration of plane waves are examined by expressing the governing equation for two dimensional case. It is found that for the non-trivial solution of the equation yield that there exist three longitudinal waves which advance with the distinct speed, and one transverse wave which is free from thermal and carrier density response. The impact of various models (i)Moore-Gibson-Thomson thermoelastic (MGTE)(2019), (ii) Lord and Shulman's (LS)(1967) , (iii) Green and Naghdi type-II(GN-II)(1993) and (iv) Green and Naghdi type-III(GN-III)(1992) on the attributes of waves i.e., phase velocity, attenuation coefficient, specific loss and penetration depth are elaborated by plotting various figures of physical quantities. Various particular cases of interest are also deduced from the present investigations. The results obtained can be used to delineate various semiconductor elements during the coupled thermal, plasma and elastic wave and also find the application in the material and engineering sciences.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2148-2154
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• 2013

Three push-pull organic semiconductors, TPA-$Th_3$-MMN (1), TPA-ThTT-MMN (2), and TPA-ThDTT-MMN (3), comprising a triphenylamine donor and a methylene malononitrile acceptor linked by various ${\pi}$-conjugated thiophene units were synthesized, and the effects of the ${\pi}$-conjugated bridging unit on the photovoltaic characteristics of solution-processed small-molecule organic solar cells based on these semiconductors were investigated. Planar bridging units with extended ${\pi}$-conjugation effectively facilitated intermolecular ${\pi}-{\pi}$ packing interactions in the solid state, resulting in enhanced $J_{sc}$ values of the SMOSCs fabricated with bulk heterojunction films.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.139-144
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• 2020

Recently, the electronic equipment industry has become active due to the continuous increase in portable storage media with high-speed information communication, and in particular, the production of SSD(Solid State Drives) for miniaturization of mobile devices and high-speed information communication has increased rapidly. When the SSD is ejecting in the SSD test gender, the necessary ejecting force must be kept constant to have a lifespan applicable to the test device. When the ejecting force increased, it leads to wear of the link for ejecting, which causes a problem in that repeated durability decreases and the ejecting of the SSD becomes impossible. In this paper, the repeated durability test analysis according to the material and the reducing ejecting force design were performed to increase the life of the test gender for SSD inspection. The wear level of the pusher head and ejector was analyzed through repeated durability tests according to the material of the pusher head. The validity of the design was verified through the ejecting force test and repeated durability test of the Test gender, which was designed by carrying out the design to reduce the size and ejecting force of the test gender.

• Journal of Powder Materials
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• v.28 no.2
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• pp.143-149
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• 2021

In this study, (GaN)_1-x(ZnO)_x solid solution nanoparticles with a high zinc content are prepared by ultrasonic spray pyrolysis and subsequent nitridation. The structure and morphology of the samples are investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The characterization results show a phase transition from the Zn and Ga-based oxides (ZnO or ZnGa₂O₄) to a (GaN)_1-x(ZnO)_x solid solution under an NH3 atmosphere. The effect of the precursor solution concentration and nitridation temperature on the final products are systematically investigated to obtain (GaN)_1-x(ZnO)_x nanoparticles with a high Zn concentration. It is confirmed that the powder synthesized from the solution in which the ratio of Zn and Ga was set to 0.8:0.2, as the initial precursor composition was composed of about 0.8-mole fraction of Zn, similar to the initially set one, through nitriding treatment at 700℃. Besides, the synthesized nanoparticles exhibited the typical XRD pattern of (GaN)_1-x(ZnO)_x, and a strong absorption of visible light with a bandgap energy of approximately 2.78 eV, confirming their potential use as a hydrogen production photocatalyst.

• Laser Solutions
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• v.11 no.1
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• pp.12-18
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• 2008

Laser micromachining is a promising technique to fabricate the micro-scale devices. However, there remains important challenges to reducethe redeposition of ablated materials around the laser irradiated zone and to get a smooth surface, especially for metal and semiconductor materials. To achieve the high-quality micromachined devices, various methods have been developed. Liquid-assisted micromachining can be a good solution to overcome the previously mentioned problems. During the laser ablation process, the liquid around the solid sample dramatically changes the ablation characteristics, such as ablation rate, surface profile, formation of debris, and so on. In this investigation, we conducted the laser micromachining of Si in various liquid environmental conditions, such as liquid types, liquid thickness. In addition, using nanoscale time-resolved shadowgraphy technique, we observed the ablation process in liquid environments to understand the mechanism of liquid-assisted laser micromachining.