• 제목/요약/키워드: Semiconductor materials

검색결과 2,093건 처리시간 0.029초

Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT

  • Wang, Chong;Wel, Xiao-Xiao;Zhao, Meng-Di;He, Yun-Long;Zheng, Xue-Feng;Mao, Wei;Ma, Xiao-Hua;Zhang, Jin-Cheng;Hao, Yue
    • Transactions on Electrical and Electronic Materials
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    • 제18권3호
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    • pp.125-128
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    • 2017

  • This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surface morphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltages of the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formed under the ohmic contact regions during high-temperature annealing. The samples with selective etching on the ohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the different radii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mapping measurement.

  • https://doi.org/10.4313/TEEM.2017.18.3.125 인용 PDF KSCI

ANALYSIS OF SrTiO$_3$STEP-FLOW GROWTH BY RHEED

  • Shin, Dong-Suk;Lee, Ho-Nyung;Kim,Yong-Tae;Chol, In-Hoon;Kim, Chang-Jung;Kim, T.Y.;Lee, J.K.;Chung, Il-Sub
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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    • pp.65.2-65
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    • 1998

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MOCVD TiN FOR HIGH TEMPERATURE PROCESS

  • Lee, Sang-Hyeob;Kim, Jeong-Tae;Seo, Hwan-Seok;Chae, Moo-Sung;Kim, Sam-Dong
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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    • pp.153.2-153
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    • 1998

  • PDF