• Title/Summary/Keyword: Semiconductor materials

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Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT

  • Wang, Chong;Wel, Xiao-Xiao;Zhao, Meng-Di;He, Yun-Long;Zheng, Xue-Feng;Mao, Wei;Ma, Xiao-Hua;Zhang, Jin-Cheng;Hao, Yue
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.3
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    • pp.125-128
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    • 2017

  • This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surface morphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltages of the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formed under the ohmic contact regions during high-temperature annealing. The samples with selective etching on the ohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the different radii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mapping measurement.

  • https://doi.org/10.4313/TEEM.2017.18.3.125 인용 PDF KSCI

ANALYSIS OF SrTiO$_3$STEP-FLOW GROWTH BY RHEED

  • Shin, Dong-Suk;Lee, Ho-Nyung;Kim,Yong-Tae;Chol, In-Hoon;Kim, Chang-Jung;Kim, T.Y.;Lee, J.K.;Chung, Il-Sub
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1998.08a
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    • pp.65.2-65
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    • 1998

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MOCVD TiN FOR HIGH TEMPERATURE PROCESS

  • Lee, Sang-Hyeob;Kim, Jeong-Tae;Seo, Hwan-Seok;Chae, Moo-Sung;Kim, Sam-Dong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1998.08a
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    • pp.153.2-153
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    • 1998

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