• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.75-75
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• 2001

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2014년도 임시총회 및 하계학술연구발표회
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• pp.41-41
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• 2014

• 한국통신학회논문지
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• 제16권7호
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• pp.615-627
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• 1991

In this paper the relative magnitudes of the 1/f noise constants were experimentally investigated in the plana type's resistors fabricated with the different type's semicondector materials, and a new measurement technique for the 1/f noise in the semiconductor plana type's resistors may be located at the semiconductor and silicon dioxde.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1047-1050
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• 2009

The two approaches to improve the stability of oxide TFTs are described. First approach is the optimization of device architecture including MIS structure and passivation layer using conventional InGaZnO semiconductor channel layer. Second approach is to develop the new kinds of oxide semiconductor materials, which is very robust and stable against the gate bias stress and thermal stress.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2001년도 제32차 추계학술대회
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• pp.92-96
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• 2001

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.935-936
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• 2009

In this paper, we describe the basic operating mechanism of our novel reflective display, Fast Moving Ball Actuator (FMBA) mode[1], using micro-sized metal coated polymer ball in fluid medium. Metal surface of the ball can be charged up by contact electrode and their locations can be controlled by applied field to obtain optically on and off state. In the medium with high viscosity, the response speed of the moving ball might be reached into their terminal velocity and changed in proportion to the frequency of applied voltage on the electrodes.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.626-630
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• 2022

A 100 mm × 50 mm-sized (100) gallium oxide (Ga₂O₃) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga₂O₃ ingot were compatible with a commercial Ga₂O₃ substrate by showing strong (100) orientation behaviors and 246 arcsec in X-ray rocking curve. Raman characterization was also performed for both samples; thereby providing various Raman-active characteristics of Ga₂O₃ crystals. In particular, we observed A_g(5) and A_g(10) peaks of Raman active mode, directly related to the impurity of the grown Ga₂O₃ crystal. Hence, the comparison of the crystal quality and Raman analysis might be useful for further enhancement of Ga₂O₃ single crystal quality in the future.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2007년도 추계학술연구발표회 및 정기총회
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• pp.38-38
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• 2007

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.22-22
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• 2003

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 자성 및 자성재료 국제학술대회
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• pp.160-161
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• 2015