• Journal of information and communication convergence engineering
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• v.5 no.3
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• pp.281-284
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• 2007

We have analyzed the short pulse generation using heterodyne techniques. The numerical model for semiconductor lasers under the heterodyne technique is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The unselected sidebands will affect the optical and RF-spectral characteristics even when the semiconductor laser is locked to the target sidebands.

• Proceedings of the Optical Society of Korea Conference
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• 1991.07a
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• pp.135-140
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• 1991

반도체 레이저에서의 여러 가지 다른 원인에 기인하는 광쌍안정성과 이의 응용을 검토하였다. 이득 영역과 흠수포화 매체를 가지고 있는 반도체 레이저, 광전궤환이 가해진 반도체 레이저, cleaved-coupled-cavity 반도체 레이저, distributed feedback 반도체 레이저, twinstripe 반도체 레이저, 외부공진기 반도체 레이저에서의 광쌍안 정성을 고찰하였다. 또, 반도체 레이저 광증폭기에서의 광쌍안정성에 대해서도 검토하였다.

• Proceedings of the Optical Society of Korea Conference
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• 1991.07a
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• pp.141-146
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• 1991

최근 고분해능 분광, 코히어런트 광통신 등의 중요한 기반 기술인 레이저간의 위상 동기에 관한 연구와 이의 시스템에의 응용이 활발히 전개되고 있다. 이 논문에서는 레이저에 의한 광 위상 동기 루우프의 기본 동작 원리, 구성법, 특징, 응용 범위 및 위상 오차를 종합 분석하고, 공촛점 파브리 페로 공진기 결합 광귀환형 반도체 레이저에 의한 헤테로다인 및 호모다인 광 위상 동기 루우프의 최근 실험 결과를 소개한다.

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.188-189
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• 2001

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.3
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• pp.478-485
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• 2021

An injection locking technology of a semiconductor laser is a promising technology to generate optical complex signals by adjusting optical injection parameters. The extraction of the precise injection parameters plays a key role in the generation of the optical complex signal. Rate equations of semiconductor lasers under optical injection are commonly used to map the injection parameters and the corresponding optical complex signal. The accuracy of the generated optical complex signal on the injection parameters is limited since the rate equations require a locking map-based interpolation method. We propose a novel analytic method, namely rate equation-based direct extraction method, to directly calculate the injection parameters without relying on the locking map-based interpolation method. We achieved 103-times improvement of the signal accuracy by using the proposed method compared to locking-map based interpolation method.

• Korean Journal of Optics and Photonics
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• v.23 no.1
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• pp.42-51
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• 2012

In this paper, injection-locking characteristics versus active layer structures in Fabry-Perot laser diodes (FP-LD) are compared. TE and TM gain spectra and peak gains versus carrier density in polarized and unpolarized multiple quantum well structures and in an unpolarized bulk structure are calculated. The calculated gain parameters are applied to a time-domain large-signal model to simulate the injection-locking characteristics. The results show that RIN in unpolarized FD-LDs is about 3 dB lower than that in a polarized FP-LD and that the eye characteristics of the unpolarized FP-LD are much better than those of the polarized FP-LD.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.4
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• pp.643-651
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• 2013

This study applied a laser cleaning method (dry cleaning) that is used for cleaning semiconductor elements to dental implant cleaning. The lasers used in this study were pulsed fiber lasers with wavelengths of 1,064 and 532 nm. The peak output, energy per pulse, energy density per pulse, time of pulse experiment, and number of pulse experiments served as process variables for this study, and the variables were changed for each experiment. As a result, a laser with a wavelength of 532 nm showed much higher cleaning efficiency than its 1,064 nm counterpart. As the wavelength range decreased, the quantized energy increased and the reflection rate of the titanium used for the implant decreased; consequently, the energy absorption rate increased. Therefore, it is proposed that the energy density by wavelength has a greater influence on cleaning than does the output size.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.148-162
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• 1996

Bonding wires for high frequency device packaging have dominant parasitic inductances which limit the performance of semiconductor lasers. In this paper, the inductance sof bonding wires are claculated by the method of moments with incorporation of ohmic loss, and the wideband modulation characteristics are analyzed for ddifferent wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire is 7 GHz wider than that for 2mm-length bonding wire. We also observed th estatic inductance calculation results in dispersive deviation of the parasitic inductance and the modulation characteristics from the wideband moment methods calculations. The angled bonding wire has much less parasitic inductance and improves the modulation bandwidth more than 6 GHz. This calculation resutls an be widely used for designing and packaging of high-speed semiconductor device.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.161-165
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• 2003

Optical 60 ㎓ millimeter-wave (MMW) signal generation is demonstrated using the sideband injection-locking method in the master/slave configuration, where two slave lasers are locked to two among several side-bands produced by the direct rf-modulation of a master laser. These two locked slave laser outputs beat against each other in the photo-detector and produce stable and very pure 60 ㎓ signals.

• Journal of Information Display
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• v.8 no.2
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• pp.10-14
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• 2007

A blazed $GxL^{TM}$ device is described as having high optical efficiency (> 70% for RGB lasers), and high contrast ratio (> 10,000:1), and that is highly reliable when used in a large-area laser projection system. It has a robust design and precise stress control technology to maintain a uniform shape (bow and tilt) of more than 6,000 ribbons, a $0.25-{\mu}m$ CMOS compatible fabrication processing and planarization techniques to reduce fluctuation of the ribbons, and a reliable Al-Cu reflective film that provided protection against a high-power laser. No degradation in characteristics of the GxL device is observed after operating a 5,000- lumen projector for 2,000 hours and conducting 2,000 temperature cycling tests at $-20^{\circ}C$ and $+80^{\circ}C$. At the 2005 World Exposition in Aichi, Japan the world's largest laser projection screen with a size of 2005 inches (10 m ${\times}$ 50 m) and 6 million pixels (1,080 ${\times}$ 5,760) was demonstrated.