• 한국통신학회논문지
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• 제11권3호
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• pp.204-210
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• 1986

本 論文에서는 半導體 레이저를 使用하여 헤테로다인 光通信 方式을 具現시키기 爲하여 必要한 半導體 레이저의 發振周波數 安定化 시스템을 이제까지의 周波數 安定化만을 考慮한 方式에서 光出力 安定化를 爲한 歸還回路를 追加하므로서 旣存의 周波數 安定化만을 考慮한 方式에서보다 周波數安定度를 約5倍 改善시켰다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.251-254
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• 2006

In this paper, cutting qualifies and fracture strength of silicon dies by laser dicing are investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bending test and is compared with the die strength by mechanical sawing. As a results, die strength by the laser dicing shows a decrease of 50% in compared with die strength by the mechanical sawing.

• 한국정보통신학회논문지
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• 제9권4호
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• pp.811-815
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• 2005

We theoretically studied synchronization of chaotic oscillation in semiconductor lasers with chaotic light injection feed-back induced chaotic light generated from a master semiconductor laser was injected into a solitary slave semiconductor laser. The slave laser subsequently exhibited synchronized chaotic output for a wide parameter range with strong injection and frequency detuning within the injection locking scheme. We also analytically examined chaos synchronization based on a linear stability analysis from the view point of synchronization based on a linear stability analysis from the view point of modulation response of injection locked semiconductor lasers to chaotic light signal.

• 전자통신동향분석
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• 제35권4호
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• pp.1-10
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• 2020

Since the 1960s, semiconductor packaging technology has developed into electrical joining techniques using lead frames or C4 bumps using tin-lead solder compositions based on traditional reflow processes. To meet the demands of a highly integrated semiconductor device, high reliability, high productivity, and an eco-friendly simplified process, packaging technology was required to use new materials and processes such as lead-free solder, epoxy-based non cleaning interconnection material, and laser based high-speed processes. For next generation semiconductor packaging, the study status of two epoxy-based interconnection materials such as fluxing and hybrid underfills along with a laser-assisted bonding process were introduced for fine pitch semiconductor applications. The fluxing underfill is a solvent-free and non-washing epoxy-based material, which combines the underfill role and fluxing function of the Surface Mounting Technology (SMT) process. The hybrid underfill is a mixture of the above fluxing underfill and lead-free solder powder. For low-heat-resistant substrate applications such as polyethylene terephthalate (PET) and high productivity, laser-assisted bonding technology is introduced with two epoxy-based underfill materials. Fluxing and hybrid underfills as next-generation semiconductor packaging materials along with laser-assisted bonding as a new process are expected to play an active role in next-generation large displays and Augmented Reality (AR) and Virtual Reality (VR) markets.

• 한국레이저가공학회지
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• 제16권1호
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• pp.1-4
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• 2013

The optical properties of III-V compound semiconductor structure was investgated by photoreflectance (PR). The results show two signals at 1.42 and 1.73eV. These are attributed to the bandgap energy of GaAs, AlGaAs, respectively. Also, AlGaAs region showed weak signal. This signal is attributed to carbon or si defect.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.72.1-72
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• 1998

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.214-217
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• 1989

The most attractive feature of semiconductor lasers as sources for coherent optical communication system is the ability to produce frequency modulation by modulation of the bias current. The frequency deviation of semiconductor lasers under direct modulation depends on the laser structure and modulation frequency. This paper describes a circuit modeling techniques for the directly frequency modulated CSP (Channeled Substrated Planner) semiconductor laser. Predictions from this model are compared with the other published results of sinusoidal frequency modulation below than 1 GHz.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.31-37
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• 2010

In this paper, optical deflection of laser scattering has been investigated based on Rayleigh criterion for crystalline silicon wafer in solar cell. A laser scattering mechanism is newly designed using light scattering properties in silicon wafer. Intensity distributions of laser scattering are different, depending on the incident angle of laser computed from Rayleigh criterion. In case of the incident angle satisfied with the criterion, they are asymmetric. Also, their specular reflection angle is shifted to unpredicted ones. These phenomena are in accordance with previous theories of laser scattering. The optical deflection of laser scattering is experimentally identified with the designed laser scattering mechanism. Its mathematical model is presented from the geometric relationship of laser scattering. It is shown that the optical deflection of laser scattering agree with the presented model, exclusive of grazing angles which is satisfied with Rayleigh criterion.

• Journal of Periodontal and Implant Science
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• 제40권3호
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• pp.105-110
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• 2010

Purpose: It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods: Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 $J/cm^2$. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results: At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 $J/cm^2$ (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 $J/cm^2$ energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 $J/cm^2$ energy fluency than in the control. Conclusions: The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.552-554
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• 1995

In long-haul high speed optical communications, the distance between a transmitter and a receiver depends on the amount of light coupled to a single mode optical fiber from the laser diode(LD) as well as the LD characteristic itself. And the transmitter module must have long lifetime. high reliability, and even simple structure. Such points have induced laser welding technique to be a first choice in opto-electronic module packaging because it can provide strong weld joint in a short time with very small coupling loss. In this paper, packaging considerations and characteristics for high speed LD modules are discussed. They include optical path design factors for larger aligning tolerance, and novel laser welding processes for component assembly. For low coupling loss after laser welding processes, the optical path for optimum coupling of a single mode optical fiber into the LD chip was designed with the GRIN lens system providing sufficiently large aligning tolerance both in the radial and axial directions. The measured sensitivity of the LD module was better than -33.7dBm(back to back) at a BER of $10^{-10}$ with a 2.5Gbps NRZ $2^{23}-1$ PRBS.