• Title/Summary/Keyword: Semiconductor detector

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CHARACTERISTICS OF FABRICATED SiC RADIATION DETECTORS FOR FAST NEUTRON DETECTION

  • Lee, Cheol-Ho;Kim, Han-Soo;Ha, Jang-Ho;Park, Se-Hwan;Park, Hyeon-Seo;Kim, Gi-Dong;Park, June-Sic;Kim, Yong-Kyun
    • Journal of Radiation Protection and Research
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    • v.37 no.2
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    • pp.70-74
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    • 2012
  • Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of its capability to withstand strong radiation fields and high temperatures. Two PIN-type SiC semiconductor neutron detectors, which can be used for nuclear power plant (NPP) applications, such as in-core reactor neutron flux monitoring and measurement, were designed and fabricated. As a preliminary test, MCNPX simulations were performed to estimate reaction probabilities with respect to neutron energies. In the experiment, I-V curves were measured to confirm the diode characteristic of the detectors, and pulse height spectra were measured for neutron responses by using a $^{252}Cf$ neutron source at KRISS (Korea Research Institute of Standards and Science), and a Tandem accelerator at KIGAM (Korea Institute of Geoscience and Mineral Resources). The neutron counts of the detector were linearly increased as the incident neutron flux got larger.

Properties of the Amorphous Silicon Microbolometer using PECVD (PECVD 이용한 비정질 실리콘형 마이크로 볼로미터 특성)

  • Kang, Tai Young;Kim, Kyung Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.4
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    • pp.19-23
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    • 2012
  • We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

A Novel Test Structure for Process Control Monitor for Un-Cooled Bolometer Area Array Detector Technology

  • Saxena, R.S.;Bhan, R.K.;Jalwania, C.R.;Lomash, S.K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.4
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    • pp.299-312
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    • 2006
  • This paper presents the results of a novel test structure for process control monitor for uncooled IR detector technology of microbolometer arrays. The proposed test structure is based on resistive network configuration. The theoretical model for resistance of this network has been developed using 'Compensation' and 'Superposition' network theorems. The theoretical results of proposed resistive network have been verified by wired hardware testing as well as using an actual 16x16 networked bolometer array. The proposed structure uses simple two-level metal process and is easy to integrate with standard CMOS process line. The proposed structure can imitate the performance of actual fabricated version of area array closely and it uses only 32 pins instead of 512 using conventional method for a $16{\times}16$ array. Further, it has been demonstrated that the defective or faulty elements can be identified vividly using extraction matrix, whose values are quite similar(within the error of 0.1%), which verifies the algorithm in small variation case(${\sim}1%$ variation). For example, an element, intentionally damaged electrically, has been shown to have the difference magnitude much higher than rest of the elements(1.45 a.u. as compared to ${\sim}$ 0.25 a.u. of others), confirming that it is defective. Further, for the devices having non-uniformity ${\leq}$ 10%, both the actual non-uniformity and faults are predicted well. Finally, using our analysis, we have been able to grade(pass or fail) 60 actual devices based on quantitative estimation of non-uniformity ranging from < 5% to > 20%. Additionally, we have been able to identify the number of bad elements ranging from 0 to > 15 in above devices.

A Numerical Study of Different Types of Collimators for a High-Resolution Preclinical CdTe Pixelated Semiconductor SPECT System

  • Jeong, Hyun-Woo;Kim, Jong Seok;Bae, Se Young;Seo, Kanghyen;Kim, Seung Hun;Kang, Seong Hyeon;Shin, Dong Jin;Lee, Chang-Lae;Kim, Kyuseok;Lee, Youngjin
    • Journal of the Optical Society of Korea
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    • v.20 no.6
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    • pp.663-668
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    • 2016
  • In single-photon-emission computed tomography (SPECT) with a pixelated semiconductor detector (PSD), not only pinhole collimators but also parallel-hole collimators are often used in preclinical nuclear-medicine imaging systems. The purpose of this study was to evaluate and compare pinhole and parallel-hole collimators in a PSD. For that purpose, we paired a PID 350 (Ajat Oy Ltd., Finland) CdTe PSD with each of the four collimators most frequently used in preclinical nuclear medicine: (1) a pinhole collimator, and (2) low-energy high-resolution (LEHR), (3) low-energy general-purpose (LEGP), and (4) low-energy high-sensitivity (LEHS) parallel-hole collimators. The sensitivity and spatial resolution of each collimator was evaluated using a point source and a hot-rod phantom. The highest sensitivity was achieved using LEHS, followed by LEGP, LEHR, and pinhole. Also, at a source-to-collimator distance of 2 cm, the spatial resolution was 1.63, 2.05, 2.79, and 3.45 mm using pinhole, LEHR, LEGP, and LEHS, respectively. The reconstructed hot-rod phantom images showed that the pinhole collimator and the LEHR parallel-hole collimator give a fine spatial resolution for preclinical SPECT with PSD. In conclusion, we successfully compared different types of collimators for a preclinical pixelated semiconductor SPECT system.

The development of tube voltage meter using the semiconductor (반도체소자를 이용한 관전압계의 개발)

  • Seon, Jong-Ryul;Shin, Dae-Chul
    • Journal of radiological science and technology
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    • v.25 no.2
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    • pp.71-75
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    • 2002
  • According to this study, we can make the radiation check meter which have not supply because of high cost and import barrier and lengthen its life by means of repairing of radiation bomb and equipment. We can make better medical service. In my study, I used the photodiod, photoelectron, among semiconductor detectors which have a excellent detect capacity and are low cost and small size. I set up this equipment in June 1, 2002, used 640 mA remote operative fluorography equipment, which make the grade as capacity test. I used the standard measuring instrument which took proofs from a agency, now it was using in measuring agency. The comparative measuring instrument used in same condition. I took the standard which was gauged with a connecting measuring instrument. Using a existing unconnected measuring instrument, I compared the accuracy with new unconnected one. As a result, three score are within the standard. For the detailed analysis, I took the average of percentage average error. So standard instrument was -0.02, comparable was -0.22, and new one was -0.17. New one took a closer measured value with standard than comparable one. In more study, I think to take more accurate value. I expect that my study will be a base of measuring instrument, with low cost, supply of this instrument increase, I expect to decrease radiation bomb and maintain, repair and manager better.

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A brief review on the recent progress of superconducting nanowire single photon detectors

  • Chong, Yonuk
    • Progress in Superconductivity and Cryogenics
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    • v.19 no.4
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    • pp.22-25
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    • 2017
  • Superconducting nanowire single photon detectors (SNSPD) have become the most competent photon-counting devices in wide range of wavelengths. Especially in the communication wavelength (infrared), SNSPD has shown unbeatable superior performance compared to the state-of-art semiconductor single photon detectors. The technology has matured enough for the last decade so that several commercial systems are now almost ready for routine use in general optics experiments. Here we summarize briefly the recent progress in this research field, and hope to motivate further research on the improvement of the device and the system. We cover the basic key concepts, device and system performances, remaining issues and possible further research directions of SNSPD.

Development of a portable near infrared device for skin moisture by using a microspectrometer

  • Woo, Young-Ah;Suh, Eun-jung;Ahn, Jhii-Weon;Kim, Hyo-Jin
    • Proceedings of the SCSK Conference
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    • 2003.09a
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    • pp.203-224
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    • 2003
  • In recent years, a miniature spectrometer has been extensively developed due to the combination of fiber optics and semiconductor detector arrays. This type of miniature spectrometer has advantages of low price and robustness because of the capability of mass production and no moving parts are required such as lenses, mirrors and scanning monochromator. In this study, for skin diagnostics, a portable near infrared (NIR) system has been developed using a LlGA microspectrometer, which is photo-diode arrays-type.(omitted)

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The implementation of a Gd-pMOSFET thermal neutron detector and the enhancement of its sensitivity (Gd-pMOSFET 열중성자 측정기 구현 및 감도개선)

  • Lee, Nam-Ho;Kim, Seung-Ho
    • Proceedings of the KIEE Conference
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    • 2005.10b
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    • pp.430-432
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    • 2005
  • 저에너지 중성자가 가톨리늄(Gd) 막에 입사되면 중성자 포획과정에서 전환전자가 생성된다. 이 전환전자에 의해 pMOSFET $SiO_2$ 산화층에서 발생된 전자-전공쌍이 발생되고, 이 가운데 정공은 산화층 내부에 쉽게 붙잡혀(Trap) 양전하 센터로 작용하게 된다. 이 축적된 전하는 pMOSFET의 문턱전압(Threshold voltage)을 변화시킨다. 본 연구에서는 이러한 간접측정 원리를 이용하여 열중성자를 실기간 탐지할 수 있는 반도체형 탐지소자를 개발하고 하나로(HANARO) 방사선장에서의 시험을 통해 성능을 검증하였다. 그리고 감도관련 변수의 최적화를 통하여 작업자가 사용 가능한 범위의 고감도 열중성자 선량계로 개선 제작하였다. 개발된 선량계는 소형으로 실시간 열중성자 측정이 가능하며 감마방사선으로부터 독립적으로 열중성자를 측정할 수 있는 장점도 지니고 있다.

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ASIC Implementation of Nuclear Radiation Detector Using Semiconductor Sensor (반도체 센서를 이용 방사선 검출기의 ASIC 구현)

  • Yi, Un-Kun;Baek, Kwang-Ryul;Sohn, Chang-Ho
    • Proceedings of the KIEE Conference
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    • 2004.07d
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    • pp.2353-2355
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    • 2004
  • 본 논문에서는 고정도의 방사선 측정이 가능한 능동형 전자선량계를 제작하기 위해 필수적으로 요구되는 반도체 방사선 검출기를 ASIC으로 구현하였다. 이는 전자선량계의 소형화와 저소비전력을 실현할 수 있도록 전치증폭기와 성형증폭기를 일체화한 것으로 방사선과 방사선 검출 소자인 상용 핀 포토다이오드의 상호작용으로 생성된 수 [nA]의 전류펄스를 측정할 수 있다. MOSIS 공정을 통하여 ASIC으로 구현된 방사선검출기는 $10{\mu}Ci$${\gamma}$-선 Ba-133, Cs-137 및 Co-60의 세 핵종에 대하여 방사선 조사시험을 수행하여 구현된 방사선 검출기의 유용성을 입증하였다.

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Nuclear Medicine Imaging Instrumentations for Molecular Imaging (분자영상 획득을 위한 핵의학 영상기기)

  • Chung, Yong-Hyun;Song, Tae-Yong;Choi, Yong
    • The Korean Journal of Nuclear Medicine
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    • v.38 no.2
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    • pp.131-139
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    • 2004
  • Small animal models are extensively utilized in the study of biomedical sciences. Current animal experiments and analysis are largely restricted to in vitro measurements and need to sacrifice animals to perform tissue or molecular analysis. This prevents researchers from observing in vivo the natural evolution of the process under study. Imaging techniques can provide repeatedly in vivo anatomic and molecular information noninvasively. Small animal imaging systems have been developed to assess biological process in experimental animals and increasingly employed in the field of molecular imaging studies. This review outlines the current developments in nuclear medicine imaging instrumentations including fused multi-modality imaging systems for small animal imaging.