• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.687-694
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• 2016

A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7%, respectively at 50 GHz.

• 한국전기전자재료학회논문지
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• 제35권2호
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• pp.184-189
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• 2022

In this paper, the fault current limiting operations of three-phase transformer type superconducting fault current limiter (SFCL) using double quench, which consisted of E-I iron core with three legs wound by primary and secondary windings and two superconducting modules (SCMs), were analyzed according to three-phase ground fault types. To verify the effective operation of the three-phase transformer type SFCL using double quench, the test circuit for three-phase ground faults was constructed, and the fault current tests were carried out. Through analysis on the fault current test results, the different fault current limiting characteristics of three-phase transformer type SFCL using double quench from three-phase transformer type SFCL using three SCMs were discussed.

• Journal of Power Electronics
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• 제7권3호
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• pp.181-190
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• 2007

This paper presents a novel circuit topology of a DC bus line series switch and parallel snubbing capacitor-assisted soft-switching PWM full-bridge inverter type DC-DC power converter with a high frequency planar transformer link, which is newly developed for high performance arc welding machines in industry. The proposed DC-DC power converter circuit is based upon a voltage source-fed H type full-bridge soft-switching PWM inverter with a high frequency transformer. This DC-DC power converter has a single power semiconductor switching device in series with an input DC low side rail and loss less snubbing capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge arms and DC bus line can achieve ZCS turn-on and ZVS turn-off transition commutation. Consequently, the total switching power losses occurred at turn-off switching transition of these power semiconductor devices; IGBTs can be reduced even in higher switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules can be realized at 60 kHz. It is proved experimentally by power loss analysis that the more the switching frequency increases, the more the proposed DC-DC power converter can achieve a higher control response performance and size miniaturization. The practical and inherent effectiveness of the new DC-DC converter topology proposed here is actually confirmed for low voltage and large current DC-DC power supplies (32V, 300A) for TIG arc welding applications in industry.

• 전력전자학회논문지
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• 제19권4호
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• pp.327-331
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• 2014

LED(Light Emitting Diode) is a semiconductor device utilizing electroluminescent effect is a phenomenon in which a type of P-N junction diode, the light of short wavelength which a voltage is applied in the forward direction is released. LED is advantageous in reducing the energy as environmentally materials that can greatly reduce the carbon emissions, recent it has attracted attention IT(Information Technology) and GT(Green Technology) industry. In addition, there are advantages long life, high efficiency, and excellent response speed, LED have come into the spotlight as the illumination means to replace the existing fluorescent light and incandescent light bulb. When connecting to MR16 electronic transformer for existing LED driver circuit, due to malfunction of the dimmer and the electronic transformer, flicker occurs and linear dimming is not possible. Therefore, in this paper, we suggest an LED drive circuit there is no flicker with the corresponding dimming MR16 electronic transformer. Further, we explain the principles of the LED current control technique and the principle of the drive circuit of the LED, in order to validate the proposed circuit through prototyping and simulation.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2018년도 전력전자학술대회
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• pp.332-333
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• 2018

This paper presents an advanced abnormal over-current protection with $SuperFET^{(R)}$ 800V MOSFET in Flyback converter. In advanced abnormal over-current protection, digital pattern generator is proposed to detect a steep di/dt current condition when secondary rectifier diode or the transformer is shorted. If current sensing signal is larger than current limit during consecutive switching cycle, Gate signal will be stopped for 7 internal switching periods. If the abnormal over-current maintains pattern, the controller goes into protection mode. The Advanced over-current protection has been implemented in a 0.35um BCDMOS process (ON Semiconductor process).

• 전력전자학회:학술대회논문집
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• 전력전자학회 2016년도 전력전자학술대회 논문집
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• pp.107-108
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• 2016

Solid State Transformer(SST) has been recently regarded as a good alternative to conventional low frequency transformer. SST is consist of several high voltage power stage, so it is important to select optimal semiconductor switches for specification. This paper presents optimal IGBT switches for low switching losses using analyzing switching characteristics of several high voltage IGBT switches. Double Pulse Tester(DPT) experiment is used to verify characteristics of this IGBT switches.

• Journal of electromagnetic engineering and science
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• 제9권1호
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• pp.32-37
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• 2009

Various Class-E CMOS power amplifiers for GSM applications are presented. A stage-convertible transformer for a dual mode power amplifier is proposed to increase efficiency in the low-output power region. An integrated passive device(IPD) process is used to reduce combiner losses. A split secondary 1:2 transformer with IPD process is designed to obtain efficient and symmetric power combining. A quasi-four-pair structure of CMOS PA is also proposed to overcome the complexities of power combining.

• Journal of international Conference on Electrical Machines and Systems
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• 제3권1호
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• pp.78-82
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• 2014

Power Transformers with more than one secondary winding are not uncommon in industrial applications. But new classes of applications where very large number of independent secondaries are used are becoming popular in controlled converters for medium and high voltage applications. Cascade H-bridge medium voltage drives and Pulse Step Modulation (PSM) based high voltage power supplies are such applications. Regulated high voltage power supplies (Fig. 1) with 35-100 kV, 5-10 MW output range with very fast dynamics (${\mu}S$ order) uses such transformers. Such power supplies are widely used in fusion research. Here series connection of isolated voltage sources with conventional switching semiconductor devices is achieved by large number of separate transformers or by single unit of multi-secondary transformer. Naturally, a transformer having numbers of secondary windings (~40) on single core is the preferred solution due to space and cost considerations. For design and simulation analysis of such a power supply, the model of a multi-secondary transformer poses special problem to any circuit analysis software as many simulation softwares provide transformer models with limited number (3-6) of secondary windings. Multi-Secondary transformer models with 3 different schemes are available. A comparison of test results from a practical Multi-secondary transformer with a simulation model using magnetic component is found to describe the behavior closer to observed test results. Earlier models assumed magnetising inductance in a linear loss less core model although in actual it is saturable core made-up of CRGO steel laminations. This article discusses a more detailed representation of flux coupled magnetic model with saturable core properties to simulate actual transformers very close to its observed parameters in test and actual usage.

• Journal of Power Electronics
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• 제4권4호
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• pp.237-245
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• 2004

In this paper, a two-switch high frequency flyback transformer linked zero voltage soft switching PWM DC-DC power converter implemented for distributed DC- feeding power conditioning supplies is proposed and discussed. This switch mode power converter circuit is mainly based on two main active power semiconductor switches and a main flyback high frequency transformer linked DC-DC converter in which, two passive lossless quasi-resonant snubbers with pulse current regeneration loops for energy recovery to the DC supply voltages composed of a three winding auxiliary high frequency pulse transformer, auxiliary capacitors and auxiliary diodes for inductive energy recovery discharge blocking due to snubber capacitors are introduced to achieve zero voltage soft switching from light to full load conditions. It is clarified that the passive resonant snubber-assisted soft switching PWM DC-DC power converter has some advantages such as simple circuit configuration, low cost, simple control scheme, high efficiency and lowered noises due to the soft switching commutation. Its operating principle is also described using each mode equivalent circuit. To determine the optimum resonant snubber circuit parameters, some practical design considerations are discussed and evaluated in this paper. Moreover, through experimentation the practical effectiveness of the proposed soft switching PWM DC-DC power converter using IGBTs is evaluated and compared with a hard switching PWM DC-DC power converter.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.280-285
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• 2015

A fully integrated high-efficiency linear CMOS power amplifier (PA) is developed for 802.11n WLAN applications using the 65-nm standard CMOS technology. The transformer topology is investigated to obtain a high-efficiency and high-linearity performance. By adopting a 2:2 output transformer, an optimum impedance is provided to the PA core. Besides, a LC harmonic control block is added to reduce the AM-to-AM/AM-to-PM distortions. The CMOS PA produces a saturated power of 26.1 dBm with a peak power-added efficiency (PAE) of 38.2%. The PA is tested using an 802.11n signal, and it satisfies the stringent error vector magnitude (EVM) and mask requirements. It achieves -28-dB EVM at an output power of 18.6 dBm with a PAE of 14.7%.