• 한국소음진동공학회논문집
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• 제18권8호
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• pp.872-878
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• 2008

Many industrial operations require continuous or nearly-continuous operation of machines, interruption of which can result in significant cost loss. The condition monitoring of these machines has received considerable attentions in recent years. Rapid developments in semiconductor, computing, and communication with a remote site have led to a new generation of sensor called "smart" sensors which are capable of wireless communication with a remote site. The purpose of this research is to develop a new type of smart sensor for on-line condition monitoring. This system is addressed to detect conditions that may lead to equipment failure when it is running. Moreover it will reduce condition monitoring expense using low cost MEMS accelerometer. This system is capable for signal preprocessing task and analog to digital converter which is controlled by CPU. This sensor communicates with a remote site PC using TCP/IP protocols. The developed sensor executes performance tests for data acquisition accuracy estimations.

• 한국인터넷방송통신학회논문지
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• 제19권6호
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• pp.183-189
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• 2019

ARM은 저가임에도 불구하고, 저전력 소비와 신뢰할만한 성능으로 인하여 스마트폰, 디지털 카메라, 가정용 네트워크 장치, 무선 기술 등에 널리 쓰이고 있다. 국내는 메모리 반도체 설계에 있어서 세계 최고의 수준이나, 프로세서의 설계는 그에 미치지 못하여 메모리와 프로세서의 균형있는 발전을 이루지 못하고 있다. 일반적으로 프로세서를 설계할 때는 반드시 예외처리 및 인터럽트 기능까지 갖춰야하지만 연구단계에서는 이것이 누락되는 경우가 많다. 그러나, 프로세서가 완벽하게 동작하기 위하여 예외처리 및 인터럽트 기능까지 포함되어야 한다. 본 논문에서는 VHDL을 이용하여 예외처리 및 인터럽트 기능을 갖는 32 비트 ARMv4 계열의 프로세서를 설계하고, ModelSim으로 검증하였다. 그 결과, ARM의 예외처리 및 인터럽트 기능을 성공적으로 수행할 수 있었다.

• International Journal of Internet, Broadcasting and Communication
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• 제12권2호
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• pp.30-36
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• 2020

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.349-352
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• 2010

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.44-57
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• 2016

Rectification is used as a preprocessing to reduce the computation complexity of disparity estimation. However, rectification also requires a complex computation. To minimize the computing complexity, rectification using a lookup-table (R-LUT) has been introduced. However, since, the R-LUT consumes large amount of memory, rectification with compressed LUT (R-CLUT) has been introduced. However, the more we reduce the memory consumption, the more we need decoding overhead. Therefore, we need to attain an acceptable trade-off between the size of LUT and decoding overhead. In this paper, we present such a trade-off by adaptively combining simple coding methods, such as differential coding, modified run-length coding (MRLE), and Huffman coding. Differential coding is applied to transform coordinate data into a differential form in order to further improve the coding efficiency along with Huffman coding for better stability and MRLE for better performance. Our experimental results verified that our coding scheme yields high performance with maintaining robustness. Our method showed about ranging from 1 % to 16 % lower average inverse of compression ratio than the existing methods. Moreover, we maintained low latency with tolerable hardware overhead for real-time implementation.

• 한국기계가공학회지
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• 제6권1호
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• pp.34-42
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• 2007

Powder blasting technique has been considered one of the most appropriate micro machining methods for hard and brittle materials, since the productivity is high and the heat layers caused by material removal are very thin. Recent development of special purposed parts, such as the parts for semiconductor processing, the parts for LCD, sensors for micro machine fabrication and so on, has been expanded. Thus, it is essential to develop powder blasting technologies for micromachining of hard and brittle materials such as glass, ceramics and so on. In this paper, the characteristics of powder blasted glass surface were tested under various blasting parameters. Finally, we proposed a predictive model for powder blasting process using the neural network and the response surface method. Detail analysis of the simulation results is carried out and the performance of two predictive models is compared.

• 대한기계학회논문집B
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• 제30권4호
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• pp.306-313
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• 2006

Automated material handling system is being used as a method to reduce manufacturing cost in the semiconductor and flat panel displays (FPDs) manufacturing process. Those are considering switch-over from the traditional cassette system to single-substrate transfer system to reduce raw materials of stocks in the processing line. In the present study, the wafer transportation speed has been evaluated by numerical and experimental method for three propulsion nozzle array (face, front, rear) in an air levitation system. Test facility for 300 mm wafer was equipped with two control tracks and a transfer track of 1,500mm length. The diameter of propulsion nozzle is 0.8mm and air velocity of wafer propulsion is $50\sim150m/s$. We found that the experimental results of the wafer transportation speed were well agreed with the numerical ones. Namely, the predicted values of the maximum wafer transportation speed are higher than those values of experimental data by 16% and the numerical result of the mean wafer transportation speed is higher than the experimental result within 20%.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.620-623
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• 2003

The material processing by using ultrashort pulse laser, in recently, is actively applying into the micro machining and nano-machining technology since ultrashort pulse has so faster than the time which the electrons energy absorbing photon energy is transmitted to surrounding lattice-phonon that it has many advantages in point of machining. The micro machining of metallic thin film on the plain glass is widely used in the fields such as mask repairing for semiconductor, fabrication of photonic crystal, MEMS devices and data storage devices. Therefore, it is important to secure the machining technology of the sub-micron size. In this research, we set up the machining system by using ultrashort pulse laser and conduct on the Cr 200nm thin film ablation experiments of spot and line with the variables such as energy, pulse number, speed, and so on. And we observed the characteristics of surrounding heat-affected zone and by-products appeared in critical energy density and higher energy density through SEM, and also examined the machining features between in He gas atmosphere which make pulse change minimized by nonlinear effect and in the air. Finally, the pit size of 0.8${\mu}{\textrm}{m}$ diameter and the line width of 1${\mu}{\textrm}{m}$ could be obtained.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.395-401
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• 2013

In-situ optical emission spectroscopy (OES) is employed for leak detection in plasma etching system. A misprocessing is reported for significantly reduced silicon etch rate with chlorine gas, and OES is used as a supplementary sensor to analyze the gas phase species that reside in the process chamber. Potential cause of misprocessing reaches to chamber O-ring wear out, MFC leaks, and/or leak at gas delivery line, and experiments are performed to funnel down the potential of the cause. While monitoring the plasma chemistry of the process chamber using OES, the emission trace for nitrogen species is observed at the chlorine gas supply. No trace of nitrogen species is found in other than chlorine gas supply, and we found that the amount of chlorine gas is slightly fluctuating. We successfully found the root cause of the reported misprocessing which may jeopardize the quality of thin film processing. Based on a quantitative analysis of the amount of nitrogen observed in the chamber, we conclude that the source of the leak is the fitting of the chlorine mass flow controller with the amount of around 2-5 sccm.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1992년도 한국자동제어학술회의논문집(국제학술편); KOEX, Seoul; 19-21 Oct. 1992
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• pp.388-393
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• 1992

An infrared range finder using a self-mixing laser diode (SM-LD), which has been proposed and developed by the Authors, can measure not only a range of a moving target but its velocity simultaneously. In this paper, described is that the precise mode-hop pulse train can be obtained by employing a new signal processing circuit even when the backscattered light returning into the SM-LD is much more weaker. As a result, the distance to a tilted square sheet made from aluminium or white paper, which is placed 10 cm through 60 cm from the SM-LD, is measured with accuracy of a few percent even when the tilting angle is less than 75 degrees or 85 degrees, respectively. And in this paper, described is the range-image recognition of a plane object under the condition of standstill. The output laser beam is scanned by scanning two plane mirrors-equipped with each stepping motor. And we succeeded in the acquisition of the range-image of a plane object in a few tens of seconds. Furthermore, described is a feasibility study about the range-image recognition of a slowly moving plane object.