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http://dx.doi.org/10.4313/JKEM.2010.23.5.349

Study on the Electrical Properties of a-IGZO TFTs Depending on Processing Parameters  

Chong, Eu-Gene (Electronic Materials Center, Korean Institute of Science and Technology)
Jo, Kyoung-Chol (Electronic Materials Center, Korean Institute of Science and Technology)
Kim, Seung-Han (Electronic Materials Center, Korean Institute of Science and Technology)
Lee, Sang-Yeol (Electronic Materials Center, Korean Institute of Science and Technology)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.5, 2010 , pp. 349-352 More about this Journal
Abstract
Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.
Keywords
a-IGZO; Oxide semiconductor; Partial pressure; Transistor; Threshold voltage;
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