• 반도체디스플레이기술학회지
• /
• 제2권2호
• /
• pp.9-15
• /
• 2003

This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12" silicon wafer for spin etcher. Halogen lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and adaptive filtering. Test wafers with three kinds of priori-known films, polysilicon(300 nm), silicon-oxide(500 nm) and silicon-oxide(600 nm), are measured while the wafer is spinning at 20 Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 0.8% error.rror.

• 반도체디스플레이기술학회지
• /
• 제17권2호
• /
• pp.36-40
• /
• 2018

Point LED applied in Korea is applied to communication RCLED, but it is designed to be suitable for communication, so it does not meet requirements in fiber coupling rate and optical output. - Currently, domestic optical pipe manufacturers use general LEDs for light emitting devices, but Japanese products use high power point LEDs to develop superior point LED (RED 620 ~ 660nm).

• 반도체디스플레이기술학회지
• /
• 제20권3호
• /
• pp.32-38
• /
• 2021

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (µ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl₃/Cl₂ gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 ㎛ and the etch angle over 75° and also with no etching residue was obtained for the µ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP. The µ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

• Journal of the Optical Society of Korea
• /
• 제11권3호
• /
• pp.138-141
• /
• 2007

We suggest that supercontinuum can be used for absorption spectroscopy to observe the exciton levels of a semiconductor nano-structure. Exciton absorption spectrum of a GaAs/AlGaAs quantum well was observed using supercontinuum generated by a microstructrured fiber pumped by a femtosecond (fs) pulsed laser. Significantly narrower peaks were observed in the absorption spectrum from 11 K up to room temperature than photoluminescence (PL) spectrum peaks. Because supercontinuum is coherent light and can readily provide high enough intensity, this method can provide a coherent ultra-broad band light source to identify exciton levels in semiconductors, and be applicable to coherent nonlinear spectroscopy such as electromagnetically induced transparency (EIT), lasing without inversion (LWI) and coherent photon control in semiconductor quantum structures.

• 반도체디스플레이기술학회지
• /
• 제14권3호
• /
• pp.13-22
• /
• 2015

LED (Light Emitting Diode) lighting is gaining more and more market penetration as one of the global warming countermeasures. LED is the next generation of fusion source composed of epi/chip/packaging of semiconductor process technology and optical/information/communication technology. LED has been applied to the existing industry areas, for example, automobiles, TVs, smartphones, laptops, refrigerators and street lamps. Therefore, LED makers have been striving to achieve the leading position in the global competition through development of core source technologies even before the promotion and adoption of LED technology as the next generation growth engine with eco-friendly characteristics. However, there has been a point of view on the cost compared to conventional lighting as a large obstacle to market penetration of LED. Therefore, companies are developing a Chip-Scale Packaging (CSP) LED technology to improve performance and reduce manufacturing costs. In this study, we perform patent analysis associated with Flip-Chip CSP LED and flow chart for promising technology forecasting. Based on our analysis, we select key patents and key patent players to derive the business strategy for the business success of Flip-Chip CSP PKG LED products.

• 한국생산제조학회지
• /
• 제20권3호
• /
• pp.361-367
• /
• 2011

In this paper, it was attempted to analyze the optimal design of light emitting diode (LED), a source of back light unit (BLU). LED is beginning with commercialized red LED which is made by GaAsP compound semiconductor, and has been developed focusing on liquid crystal panel. In order to get the optimal design, optical simulation was made by analyzing luminosity shape, reflector angle, chip depth, and chip position of LED lighting. Final results show that the proposed LED characteristics were useful to increase light efficiency and it has been proven by distribution chart for actual exposed light on the light guide panel (LGP).

• Journal of the Optical Society of Korea
• /
• 제15권3호
• /
• pp.222-226
• /
• 2011

We demonstrated the feasibility of an amplified wavelength-division multiplexed passive optical network (WDM-PON) architecture based on broadband light source (BLS) seeded optical sources and a novel bidirectional reach extender. Our bidirectional reach extender could provide an amplification of both downstream and upstream signals as well as a BLS output for the upstream WDM signal generation. An error-free 1.25 Gb/s signal transmission over a 100-km long single-mode fiber was achieved in a bidirectional WDM-PON using BLS seeded reflective semiconductor optical amplifier (RSOA) sources.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2006년도 춘계학술대회 논문집
• /
• pp.161-162
• /
• 2006

Micro-stereolithography technology is used for fabricating of 3-dimensional micro-structures. In some cases, this technology is more economical and simpler than MEMS and LIGA technologies based on semiconductor process. In this research, the micro-sterolithography apparatus that is more economical and simpler than current micro-stereolithography apparatus was developed. This apparatus uses UV lamp and optical fiber as a light source and tight delivery system, respectively.

• 센서학회지
• /
• 제27권3호
• /
• pp.160-164
• /
• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 1998년도 연구회 합동 학술발표회 논문집
• /
• pp.60-63
• /
• 1998

The widely used power supply (Switched Mode Power Supply : SMPS) as a source in order to stabilize direct current for electronics or communication systems has merits, when it is compared to the existing source for stability, such as high efficiency, small size, light weight by means of switching process of the semiconductor device which controls the flow of power. However, due to existence of inductors and capacitors used for charging energy, the source part in electronic or communication systems hasn't reached the speed, that is supposed to get, for achieving smaller size and lighter weight. In order to get smallness in size, it is necessary to increase switching frequency. And that makes devices for measuring energy smaller. Nevertheless, the rise switching frequency brings increases in switching loss, inductor loss, and power loss. Also, the occurrence of surge and noise caused by high frequency switching is getting higher. The resonant converter has been considered as one of methods that give solutions for the problems of SMPS and that method have been paid attention as a source technology in electronics and communication.