• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2002.05a
• /
• pp.503-507
• /
• 2002

Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

• Proceedings of the KIEE Conference
• /
• 2003.10a
• /
• pp.273-275
• /
• 2003

본 실험은 고출력 반도체 레이저의 p-side-down 마운팅용 솔더로서 AuSn 합금 솔더(80wt%:20wt%)의 적합성에 대해 연구하였다. $1{\mu}m$이하의 균일도로 폴리싱 된 Cu heat sink의 표면에 두께 $1{\mu}m$의 Ni로 코팅을 한다음, AuSn 다층박막은 e-beam 증착기로 AuSn 합금 솔더는 열증착기로 각각 증착하였다. 열처리는 산화 방지를 위해 $N_2$ 분위기에서 행하였으며, 동일한 압력으로 마운팅을 하였다. 표면의 거칠기와 형상은 AFM(Atomic Force Microscope)과 SEM(Scanning Electron Microscopy)으로 그리고 Au와 Sn의 성분비는 AES(Auger Electron Spectroscopy) 로 비교하였다. 또한 CW(연속발진)을 통한 L-I(Light-Current)측정을 통해 본딩상태를 비교하였다.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.3
• /
• pp.156-159
• /
• 2013

The electrical properties of ZnO nanowire field effect transistors (FETs) have been investigated depending on various diameters of nanowires. The ZnO nanowires were synthesized with an Au catalyst on c-plane $Al_2O_3$ substrates using hot-walled pulsed laser deposition (HW-PLD). The nanowire FETs are fabricated by conventional photo-lithography. The diameter of ZnO nanowires is simply controlled by changing the thickness of the Au catalyst metal, which is confirmed by FE-SEM. It has been clearly observed that the ZnO nanowires showed different diameters simply depending on the thickness of the Au catalyst. As the diameter of ZnO nanowires increased, the threshold voltage of ZnO nanowires shifted to the negative direction systematically. The results are attributed to the difference of conductive layer in the nanowires with different diameters of nanowires, which is simply controlled by changing the catalyst thickness. The results show the possibility for the simple method of the fabrication of nanowire logic circuits using enhanced and depleted mode.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1995.10a
• /
• pp.437-441
• /
• 1995

In this paper, the ultra precision positioning system for servo motor and piezo actuator using dual servo loop control has been developed. For positioning system having long distance with ultra precision, the combination of global stage and micro stage is required. Servo moter and ball screw are used as a master stage and piezo acuator as a fine stage. By using this system, an positional precision witin .+-. 30nm has been achieved at dual servo loop control. When using micro stage, an positional precision within .+-. 10nm has been achieved. This result can be applied to develop semiconductor equipment such as wafer stepper.

• Journal of the Korean Vacuum Society
• /
• v.8 no.4B
• /
• pp.530-535
• /
• 1999

W made a near-field optical microscope(NSOM) apparatus and evaluated it. To control the distance between a tip and a sample, we used a piezoelectric translator and a He-Ne laser, and consequently obtained the spatial resolution better than 100nm. For the semiconductor spectroscopic applications, we performed photoluminescence and photocurrent experiments on the GaAs/AlGaAs MQWs samples. In the case of PL experiment, we obtained the low signal to nose ration due to the extremely small power of a light source passing through the nanometric optical fiber tip. However photocurrent experiment shows a hundred times better signal to noise than that of PL experiment. This suggests that photocurrent experiment using NSOM have the possibility to provide the spatial resolution better than 10nm.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.10 no.4
• /
• pp.168-174
• /
• 1985

The wavelength and output power of semiconductor laser is varying sensitively with temperature. It must be stabilized by the aid of some proper stabilization technique in order to use it as a radiative source for heterodyne optical communication, optical metrology, and high resolution spectroscopy. In this paper, the temperature of the thermal chamber was variable from -27$-50^{\circ}C$ to +73$-50^{\circ}C$ and the temperature stability was within ${\pm}2m{\circ}K$ or better.

• 제어로봇시스템학회:학술대회논문집
• /
• 1992.10b
• /
• pp.394-398
• /
• 1992

The measurable speed range of the self-mixing type semiconductor laser range finder has been greatly improved by employing a new processing circuit. Using this range finder as an external finder of a single lens reflex (SLR) autofocus (AF) camera, some clear photographs of an object moving at a medium speed of 20 mm/s is obtained.

• Korean Journal of Optics and Photonics
• /
• v.10 no.6
• /
• pp.524-526
• /
• 1999

It is observed that the mode spacing of an cxternal cavity semiconducror laser can be altered dramatically by the insertion of an intracavity etalon. 111e mode spacing is decreased as a function of etalon's reflectivity and this effect is quantitatively explained by an analysis of resonant modes. We abo show that this effect provides a precise and convenient alternative for determining the coating reflectivity of a high reflectivity etalon. talon.

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.02a
• /
• pp.224-225
• /
• 2000

Transparent and hard materials such as sapphire are used for many industrial applications as optical windows, hard materials on mechanical contact against abrasion, and substrate materials for opto-electronic semiconductor devices such as blue LED and blue LD etc. The materials should be cut along the proper shapes possible to be used for each application. In case of blue LED, the blue LED wafer should be cut to thousands of blue LED pieces at the final stage of the manufacturing process. The process of cutting the wafer is usually divided into two steps. The wafer is scribed along the proper shapes in the first step. It is inserted between transparent flexible sheets for easy handling. And then, it is broken and split in the next step. Harder materials such as diamonds are usually used to scribe the wafer, while it has a problem of low depth of scribing and abrasion of the harder material itself. The low depth of scribing can induce failure in breaking the wafer along the scribed line. It was also known that the expensive diamond tip should be replaced frequently for the abrasion. (omitted)

• Transactions of the Korean Society for Noise and Vibration Engineering
• /
• v.12 no.1
• /
• pp.65-72
• /
• 2002

Generally, there are laser operating equipments( aligner, stepper) and electronic microscope( SEM, TEM) as a high precision manufacturing and inspection equipment in semiconductor production companies, precision examination and measuring laboratories. Mostly, these equipments are characterized by projection and target part. The relative displacements between projection and target part are dominant roles in vibrational problem in these precision equipments. These relative displacements are determined by the position of incoming vibration and the difference of vibration response in projection and target part. In this study, the allowable vibrational limits are suggested and the vibrational reduction plans are proposed by measurement and analysis of vibration phenomenon in the Clean Room in PDP(plasma display panel) production building. The vibration performance is evaluated by comparison relative displacements between projection and target part before/after the vibration isolation plan.