• 대한전자공학회논문지SD
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• 제45권8호
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• pp.17-23
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• 2008

본 연구에서는 InP 물질의 능동과 수동 광도파로를 포함하는 신개념의 직사각형 링 레이저를 제작하여 그 특성을 측정하고 분석하였다. 직사각형 링 레이저의 구성은 작은 광 손실을 갖는 네 개의 전반사 미러와 세 개의 수동 광도파로로 구성된 방향성 결합기로 되어 있다. 제작된 두 개의 서로 다른 직사각형 링 공진기의 능동 영역의 길이는 250과 $350{\mu}m$이고, 전체 공진기 길이는 각각 580과 $780{\mu}m$이다. 측정된 링 레이저의 문턱 전류는 상온에서 연속 전류를 인가했을 때 38 mA를 얻을 수 있었다. 이때 20 dB 이상의 인접모드 억압비를 갖는 단일 모드 발진 특성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.131-131
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• 2010

The power of semiconductor laser diodes has been limited primarily by the heating effects which occur at high optical intensities. The actual limiting event can take one of a number of forms such as. catastrophic optical damage or filamentation. A general approach to this problem is to design a heterostructure which creates a high powered output while maintaining low internal optical intensities. A graded index separate confinement heterostructure (GRIN-SCH) is one such structure that accomplishes the above task. Here, the active region is sandwiched between graded index layers where the index of refraction increases nearer to the active layer. This structure has been shown to yield a high efficiency due to the confinement of both the optical power and carriers, thereby reducing the optical intensity required to achieve higher powers. The optical confinement also reinforces the optical beam quality against high power effects. Quantum dots have long been a desirable option for laser diodes due to the enhanced optical properties associated with the zeroth dimensionality. In our work, we use PICS3D software created by Crosslight Software Inc. to simulate the performance of In0.67A10.33As/A10.2Ga0.8AsquantumdotsusedwithaGRIN-SCH. The simulation tools are used to optimize the GRIN-SCH structure for high efficiency and optical beam quality.

• 한국세라믹학회지
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• 제47권4호
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• pp.329-332
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• 2010

In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

• Design & Manufacturing
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• 제14권3호
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• pp.23-30
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• 2020

Laser Assisted Thermo-Compression Bonding (LATCB) has been proposed to improve the "chip tilt due to the difference in solder bump height" that occurs during the conventional semiconductor chip bonding process. The bonding module of the LATCB system has used a piezoelectric actuator to control the inclination of the compression jig on a micro scale, and the piezoelectric actuator has been directly coupled to the compression jig to minimize the assembly tolerance of the compression jig. However, this structure generates a lateral force in the piezoelectric actuator when the compression jig is tilted, and the stacked piezoelectric element vulnerable to the lateral force has a risk of failure. In this paper, the optimal design of the flexure hinge was performed to minimize the lateral force generated in the piezoelectric actuator when the compression jig is tilted by using the displacement difference of the piezoelectric actuator in the bonding module for LATCB. The design variables of the flexure hinge were defined as the hinge height, the minimum diameter, and the notch radius. And the effect of the change of each variable on the stress generated in the flexible hinge and the lateral force acting on the piezoelectric actuator was analyzed. Also, optimization was carried out using commercial structural analysis software. As a result, when the displacement difference between the piezoelectric actuators is the maximum (90um), the maximum stress generated in the flexible hinge is 11.5% of the elastic limit of the hinge material, and the lateral force acting on the piezoelectric actuator is less than 1N.

• Tribology and Lubricants
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• 제40권2호
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• pp.47-53
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• 2024

Surface topography plays a decisive role in determining the performance of several precision components. In particular, the surface roughness of semiconductor devices affects the precision of the circuit. In this regard, the surface topography of a given surface needs to be appropriately assessed. Typically, the average roughness is used as one of the main indicators of surface finish quality because it is influenced by both dynamic and static parameters. Owing to the increasing demand for such accurate and reliable surface measurement systems, studies are continuously being conducted to understand the parameters of surface roughness and measure the average roughness with high reliability. However, the differences in the measurement methods of surface roughness are not clearly understood. Hence, in this study, the surface roughness of the back of a silicon wafer was measured using both contact and noncontact methods. Subsequently, a comparative analysis was conducted according to various surface roughness parameters to identify the differences in surface roughness depending on the measurement method. When using a 3D laser confocal microscope, even smaller surface asperities can be measured compared with the use of a 3D profiler. The results are expected to improve the understanding of the surface roughness characteristics of precision components and be used as a useful guideline for selecting the measurement method for surface topography assessment.

• 대한전자공학회논문지SP
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• 제47권1호
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• pp.91-96
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• 2010

본 논문에서는 핵연료봉의 변형에 대한 고정도 검사방법을 제안한다. 핵 연료봉과 이를 관측하는 영상 센서의 광축을 수직으로 구성한다. 영상 센서의 광축을 기준으로 45도 또는 그보다 높은 각도로 레이저 라인빔을 연료봉 표면에 조사하면 연료봉의 수평 방향 변위가 영상 센서에서는 수직 방향 변위로 관측된다. 핵 연료봉 표면에 일정 각도로 입사된 레이저 라인빔이 영상 센서면에서는 일정 두께를 갖는 포물선 형태로 관측되게 된다. 센서 화면에 나타나는 일정 두께의 포물선을 영상처리하여 타원으로 모델링하고 타원의 장축과 단축의 기울기를 구한다. 포물선의 변곡점과 모델링한 타원의 장축과 단축이 교차하는 지점을 특징점으로 추출한다. 이와 같은 영상처리 알고리즘을 이용하여 핵 연료봉의 수평방향 변위에 따른 특징점 좌표의 수직방향 편차를 계산한다. 크러드가 형성된 핵연료봉 시편에 대해 고해상도 영상센서를 사용하여 실험한 결과 중성자 조사후 핵연료봉의 변형 검사기준인 $150{\mu}m$ 보다 3배 이상 개선된 $50{\mu}m$ 이하의 검사 정밀도를 달성하였다.

• Journal of the Optical Society of Korea
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• 제2권2호
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• pp.74-79
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• 1998

The use of a fiber Fabry-Perot interferometer (FFPI) as an optical current transducer is demonstrated. A conventional inductive pickup coil converts the time-varying current I(t) being measured to a voltage waveform V(t) applied across a piezeolectric strip to which the FFPI is bonded. The strip experiences a longitudinal expansion and contraction, resulting in an optical phase shift ${\phi}(t)$ in the fiber proportional to V(t). This phase shift is measured using a frequency-modulated semiconductor light source, photodiodes to monitor the reflected light from the FFPI and the laser power, and a digital signal processor. Calibration routines compute V(t) and I(t) from the measured phase shift at a l KHz rate. Response to 60 Hz ac over the design range 0-1300A rms is characterized Transient response of the FFPI transducer is also measured.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1523-1525
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• 1999

ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

• 한국광학회지
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• 제4권2호
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• pp.188-194
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• 1993

루비듐-87 원자의 $D_2$ 전이선에 대해 Nakayama의 광펌핑 효과를 고려한 포화분광이론을 적용하여 공진신호의 상대적인 크기를 펌프광과 조사광의 편광 조합에 따라 계산하였고, 선폭 축소된 반도체 레이저를 사용한 실험결과와 비교해 보았다. 그 결과, 지자장을 차례했을 때의 실험결과와 계산 결과는 잘 일치하는 것을 알았다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 춘계학술대회 논문집
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• pp.503-507
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• 2002

Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.