• 전자공학회논문지A
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• 제32A권11호
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• pp.17-28
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• 1995

In this paper, we developed a two-dimensional numerical simulator which could analyze the stripe geometry semiconductor laser diodes by modifying the commercial semiconductor device simulator, MEDICI. In order to study the characteristics of semiconductor laser diodes, it is necessary to solve the Helmholtz wave equation and photon rate equation in addition to the basic semiconductor equations. Also the recombination rates due to the spontaneous and the stimulated emissions should be included, which are very important recombination mechanisms in semiconductor laser diodes. Therefore, we included the solution routines which analyzed the Helmholtz wave equation and the photon rate equation and two important recombination rates to simulate the semiconductor laser diodes. Then we simulated the gain-guiding and index-guiding DH(Double Heterostructure) semiconductor laser diodes to verify the validity of the implemented functions. The results obtained from simulation are well consistent with the previously published ones. This allows us to know the operating characteristics of DH laser diodes and is expected to use as a tool for optimum design.

• 한국정밀공학회지
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• 제27권6호
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• pp.32-38
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• 2010

Laser material processing technology is adopted in several industry as alternative process which could overcome weakness and problems of present adopted process, especially semiconductor and display industry. In semiconductor industry, laser photo lithography is doing at front-end level, and cutting, drilling, and marking technology for both wafer and EMC mold package is adopted. Laser cleaning and de-flashing are new rising technology. There are 3 kinds of main display industry which use laser technology - TFT LCD, AMOLED, Touch screen. Laser glass cutting, laser marking, laser direct patterning, laser annealing, laser repairing, laser frit sealing are major application in display industry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.285-287
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• 2009

When the laser diode is operated with continuous current, the light intensity from the laser diode deceases with time due to the temperature rise in the active layer. The phenomena, which is often called as DROOP, should be minimized in order to be used as a light source for the laser beam printer. We experimently examined the influences of the laser parameters such as threshold current, differential quantum efficiency on droop. It was found that decreasing the differential quantum efficiency of the laser diode is the effective way to minimize droop.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.556-559
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• 2006

We successfully developed a high performance and highly reliable blazed GxL device with a high optical efficiency and a high contrast ratio. The device demonstrated superior resistance against a high power laser, which is suitable for a large-area laser projector. We operated the world's largest laser projection screen using this device at the 2005 World Exposition in Aichi, Japan, problem free.

• 한국광학회지
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• 제21권3호
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• pp.111-117
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• 2010

레이저 프린터 및 OA복합기기 내부의 감광 드럼에 빛을 조사하는 핵심 광 모듈인 Laser Scanning Unit(LSU)의 광원으로 사용할 수 있는 발진파장 780 nm, 광 출력 10 mW의 모노리식 집적형 8빔 레이저 다이오드를 개발하였다. 개발된 8-빔 소자의 레이저 빔들의 각각의 물리적 간격은 $30\;{\mu}m$ 이며, 각 빔을 독립적으로 작동시키기 위해서, 공중배선공정을 신규로 개발하였다. 개발된 8빔 레이저 다이오드의 전기 및 광학적 특성 측정 결과 레이저 프린터 및 복합기의 LSU에 사용 가능함을 검증하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 SMICS 2004 International Symposium on Maritime and Communication Sciences
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• pp.66-69
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• 2004

We have investigated the spectral characteristics of semiconductor lasers locked to the external light injected from a modulated laser. The numerical model for semiconductor lasers under the external optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. In this paper, we have analyzed characteristics of semiconductor laser using optical injection locking

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

• Journal of Information Display
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• 제8권2호
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• pp.10-14
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• 2007

A blazed $GxL^{TM}$ device is described as having high optical efficiency (> 70% for RGB lasers), and high contrast ratio (> 10,000:1), and that is highly reliable when used in a large-area laser projection system. It has a robust design and precise stress control technology to maintain a uniform shape (bow and tilt) of more than 6,000 ribbons, a $0.25-{\mu}m$ CMOS compatible fabrication processing and planarization techniques to reduce fluctuation of the ribbons, and a reliable Al-Cu reflective film that provided protection against a high-power laser. No degradation in characteristics of the GxL device is observed after operating a 5,000- lumen projector for 2,000 hours and conducting 2,000 temperature cycling tests at $-20^{\circ}C$ and $+80^{\circ}C$. At the 2005 World Exposition in Aichi, Japan the world's largest laser projection screen with a size of 2005 inches (10 m ${\times}$ 50 m) and 6 million pixels (1,080 ${\times}$ 5,760) was demonstrated.

• 한국진공학회지
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• 제13권2호
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• pp.59-64
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• 2004

반도체 레이저를 광원으로 사용하는 원자흡수분광 방법으로 금속증기의 증착 공정을 감시하는 연구를 수행하였다. 전자빔 가열 방식을 이용하여 gadolinium (Gd) 금속을 대량으로 증발시켰다. 파장 영역이 770-794 nm (중심파장 780 nm)인 반도체 레이저빔과 388-396 nm 영역의 제 2 고조파 빔을 진공용기에 입사시켜 증발되는 금속증기의 원자흡수 스펙트럼을 실시간으로 기록하였다. 흡수 스펙트럼을 분석하여 증기의 원자밀도를 구했다. 전자빔 출력을 변화시키면서 측정한 원자밀도를 수정 결정 모니터 장치를 사용하여 측정한 증착률과 비교하였다. 산업적으로 많이 사용되는 Ti 등의 증착 공정 감시에 이 실험에서 구현한 레이저 분광장치를 적용할 수 있다는 것을 제시하였다.

• International Journal of Quality Innovation
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• 제8권1호
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• pp.137-153
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• 2007

Failure mode and effects analysis (FMEA) is a preventive technique in reliability management field. The successful implementation of FMEA technique can avoid or reduce the probability of system failure and achieve good product quality. The FMEA technique had applied in vest scopes which include aerospace, automatic, electronic, mechanic and service industry. The marking process is one of the back ends testing process that is the final process in semiconductor process. The marking process failure can cause bad final product quality and return although is not a primary process. So, how to improve the quality of marking process is one of important production job for semiconductor testing factory. This research firstly implements FMEA technique in laser marking process improvement on semiconductor testing factory and finds out which subsystem has priority failure risk. Secondly, a CCD position solution for priority failure risk subsystem is provided and evaluated. According analysis result, FMEA and CCD position implementation solution for laser marking process improvement can increase yield rate and reduce production cost. Implementation method of this research can provide semiconductor testing factory for reference in laser marking process improvement.