• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.34-39
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• 2017

Semiconductor is one of the most internationally competitive areas among domestic industries, the major concern of which is the stability of the wafer manufacturing processes. The first process for the manufacturing of the semiconductor wafers is the ingot growing. The vibrations are supposed to be the most important factors for the ingot quality. In order to maintain the ingot quality, the growers have the automatic shut-down equipments which are activated by vibrations, and are sensitive enough to react to the earthquakes generated in Japan. In this study, the structure of an ingot grower was analyzed through experiments and computer simulations, and further the effects of design alterations to suppress the vibrations have been investigated. The final result shows that the vibrations can be reduced substantially to improve the stability of the structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.83-91
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• 1994

We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.