• ETRI Journal
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• v.16 no.1
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• pp.45-57
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• 1994

The effects of reactive ion etching (RIE) of $SiO_2$ layer in $CHF_3/C_2F_6$ on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE : (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, $O_2$, $NF_3$, $SF_6$, and $Cl_2$ plasma treatments. XPS analysis revealed that $NF_3$ treatment is most effective. With 10 seconds exposure to $NF_3$ plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.99-108
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• 2023

Currently, semiconductor manufacturing industry heavily relies on a wide range of high global warming potential (GWP) gases, particularly during etching and cleaning processes, and their use and relevant carbon emissions are subject to global rules and regulations for achieving carbon neutrality by 2050. To replace high GWP gases in near future, dry etching using alternative low GWP gases is thus being under intense investigations. In this review, we report a current status and recent progress of the relevant research activities on dry etching processes using a low GWP gas. First, we review the concept of GWP itself and then introduce the difference between high and low GWP gases. Although most of the studies have concentrated on potentially replaceable additive gases such as C₄F₈, an ultimate solution with a lower GWP for main etching gases including CF₄ should be developed; therefore, we provide our own perspective in this regard. Finally, we summarize the advanced dry etch process research with low GWP gases and list up several issues to be considered in future research.

• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.31-36
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• 2003

On this study, an E.E(End-Effector) for the 300 mm wafer transfer robot system is newly suggested. It is a mechanical type with $180^{\circ}$ rotating ranges and is composed of 3-point arms, two plate springs and single-axis DC motor controlled by microchip. To design, relationship between the gripping force and the wafer deformation is analyzed by FEM. By analytic results, the gripping force for 300 mm wafer is confirmed as 255~274 gf. From experimental results on gripping force, repeatable position accuracy and gripping cycle times in a wafer cleaning system, we confirmed that the suggested E.E was well designed to satisfiy on the required performance for 300 mm wafer transfer robot system.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.715-718
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• 2001

This study uses traditional alum coagulation and sedimentation process to treat CMP wastewater from cleaning after polishing. The primary goal is to successfully recycle both solid fines and water for semiconductor manufacturing. Results indicated that CMP wastewater may be successfully treated to recover clean water and fine particles by alum coagulation. The optimum operating conditions for coagulation are as fellowing: alum dosage of 10 ppm, pH at 5, rapid mixing speed at 800 rpm, 5 min rapid mixing time, and long slow mixing time. The treated water with low turbidity and an average residual aluminum ion concentration of 0.23 ppm may be considered for reuse. The settled sludge after alum coagulation contains mainly SiO$_2$particle with a minor content of aluminum (1.7 wt%) may be considered as raw materials for glass and ceramic industry.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.184-187
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• 2005

In this paper, the transducer instead of mechanical dynamic structure was used to generate ultrasonic wave and the horn-shape amplifier was utilized to solve the energy decaying problem of ultrasonic wave with propagating it through the media. The analyses of ultrasonic wave and a fluid for the selected structure of a cleaning head were carried out Based on simulator results, the distance between a horn and the substrate of 4 mm and the horn diameter of 10 mm were determined to maximize the energy of ultrasonic waves. The cool ins structure was also considered to reduce the heat from the transducer and the horn.

• Journal of the Semiconductor & Display Technology
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• v.2 no.1
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• pp.15-19
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• 2003

Spin etcher can process frontside and backside on the wafer, which is used for etching, stripping, cleaning and wafer reclamation. A new generation of spin etchers has been designed to meet 300mm wafer processing. The larger header and higher spin speed make vibration problem a severe problem in developing equipments. This study shows schematic process of solving practical vibration problems, where it is required to analyze the principal ca uses of vibration problem and find out the method of vibration reduction in spin etcher. The vibration under normal operation is measured in time domain and is analyzed in frequency domain. And modal parameters are obtained through modal test. Using the modal parameters from experiments, the model of finite element method is formulated. From diagnosis using many measurements and analyses, it can be shown that main cause of vibration is unbalance of head.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.109-113
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• 2011

Hot air flow simulations of the wet station dryer module for the solar cell cleaning were conducted. Air incident angles such as to the substrates ($45^{\circ}$), to the bottom ($90^{\circ}$), and to the wall ($135^{\circ}$) were considered. Based on the simulated velocity and temperature profiles, appropriate incident angle was proposed, and it was well matched to experimental results. Additionally, uniform and non-uniform air hole sizes of the tube were compared for the uniform air flow distribution through the batch.

• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.35-38
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• 2008

This study shows the improvement of PR-Ashing rates in semi-conductor process using Atmospheric Plasma. Taguchi method is used to improve Ashing rates of photo-resist that is spread on the surface of a wafer. Improvement of Ashing rates is acquired through the decision of the effective factors and suitable combination of the factors. The results show the contribution rate of each factor and the effectiveness of Plasma for PR-Ashing process in this system.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.80-87
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• 2003

On this study, an End-Effector for the 300mm wafer transfer robot System is newly suggested. It is a mechanical type with $180^{\circ}$ rotating ranges and is composed of 3-point arms, two plate springs and single-axis DC motor. It is controlled by microchip for the DC motor control. To design, relationships on the gripping force and the wafer deformation is analyzed by FEM analysis. Criterion on gripping force of a suggested End-Effector is confirmed as $255 ~ 274g_f$ from experimental results. From experimented results on repeatable position accuracy, gripping force and gripping cycle times in a wafer cleaning system, we confirmed that the suggested End-Effector is well satisfied on the required performance for 300mm wafer transfer robot system.

• Journal of the Semiconductor & Display Technology
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• v.8 no.2
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• pp.15-21
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• 2009

Atmospheric pressure plasma equipment was successfully applied to the flip chip BGA manufacturing process to improve the uniformity of flux printing process. The problem was characterized as shrinkage of the printed flux layer due to insufficient surface energy of the flip chip BGA substrate. To improve the hydrophilic characteristics of the flip chip BGA substrate, remote DBD type atmospheric pressure plasma equipment was developed and adapted to the flux print process. The equipment enhanced the surface energy of the substrate to reasonable level and made the flux be distributed over the entire flip chip BGA substrate uniformly. This research was the first adaptation of the atmospheric pressure plasma equipment to the flip chip BGA manufacturing process and a lot of possible applications are supposed to be extended to other PCB manufacturing processes such as organic cleaning, etc.