• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.130-135
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• 2020

This paper describes the results of a study on the unmanned cleaning robot that performs the cleaning of the floating photovoltaic panels. The robot uses two SSC (Sliding Suction Cup) adsorptive devices to move up and down the slope. First, the forces generated when the robot moves up the slope are mechanically analyzed. The robot was designed and manufactured to operate stably by using the presented results. Next, the robot motion was tested on the inclined panel. It has been proven that robots are well designed and built to clean sloped panels.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.21-27
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• 2023

In this article, a plate-type megasonic cleaning system with cooling pins is proposed for the sliced ingot, which is a raw material of silicon (Si) wafers. The megasonic system is operated with a lead zirconate titanate (PZT) actuator, which has high electric resistance, thus when it is being operated, it dissipates much heat. So this article proposes a megasonic system with cooling pins. In the design process, finite element analysis was performed and the results were used for the design of the waveguide. The frequency with the maximum impedance value was 998 kHz, which agreed well with the measured value of 997 kHz with 0.1 % error. Based on the results, the 1 MHz waveguide was fabricated. Acoustic pressures were measured, and analyzed. Finally, cleaning tests were performed, and 90 % particle removal efficiency (PRE) was achieved over 10 W power. These results imply that the developed 1 MHz megasonic will effectively clean sliced ingot wafer surfaces.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.6-13
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• 2022

The electrostatic phenomenon seriously issued in extreme ultraviolet semiconductor cleaning was studied in junction with molecular dynamic aspect. It was understood that two lone pairs of electrons in water molecule were subtly different each other in molecular orbital symmetry, existed as two states of large energy difference, and became basis for water clustering through hydron bonds. It was deduced that when hydrogen bond formed by lone pair of higher energy state was broken, two types of [H₂O]⁺ and [H₂O]^- ions would be instantaneously generated, or that lone pair of higher energy state experiencing reactions such as friction with Teflon surface could cause electrostatic generation. It was specifically observed that, in case of electrolyzed cathode water, negative electrostatic charges by electrons were overlapped with negative oxidation reduction potentials without mutual reaction. Therefore, it seemed that negative electrostatic development could be minimized in cathode water by mutual repulsion of electrons and [OH]^- ions, which would be providing excellences on extreme ultraviolet cleaning and electrostatic control as well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.88-89
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• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• Proceedings of the KAIS Fall Conference
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• 2001.05a
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• pp.124-128
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning technology which consumes vast amounts of chemicals and ultra pure water(UPW) and is the high temperature Process. Therefore, this technology gives rise to the many environmental issues, and some alternatives such as functional water cleaning are being studied. The electrolyzed water was generated by an electrolysis system which consists of anode, cathode, and middle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case of NH$_4$Cl electrolyte, the oxidation-reduction potential and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.8, and -750mV and 10.0, respectively. AW and CW were deteriorated after electrolyzed, but maintained their characteristics for more than 40 minutes sufficiently enough for cleaning. Their deterioration was correlated with CO$_2$ concentration changes dissolved from air. It was known that AW was effective for Cu removal, while CW was more effective for Fe removal. The particle distributions after various particle removal processes maintained the same pattern. In this work, RCA consumed about 9$\ell$chemicals, while EW did only 400$m\ell$ HCI electrolyte or 600$m\ell$ NH$_4$Cl electrolyte. It was hence concluded that EW cleaning technology would be very effective for eliminating environment, safety, and health(ESH) issues in the next generation semiconductor manufacturing.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1089-1092
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• 2003

This paper has been studied on wafer cleaning and photoresist striping in semiconductor fabrication processes using ozone solved deionized water. In this work, we have developed high concentration ozone generating system and high contact ratio ozone solving system to get high efficiency DIO$_3$. Through this study, we obtained 11% ozone gas concentration, 99.5% of ozone efficiency and 51% of solubility in deionized water.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.114-118
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• 2009

PVA (polyvinyl alcohol) brush cleaning method is a typical cleaning method for semiconductor cleaning process especially post-CMP cleaning. PVA brush contacts with the wafer surface and abrasive particle, generating the contact rotational torque of the brush, which is the removal mechanism. The brush rotational torque can overcome theoretically the adhesion force generated between the abrasive particle and wafer by zeta potential. However, after CMP (chemical mechanical polishing) process, many particles remained on the wafer because the brush was contaminated in previous post-CMP cleaning step. The abrasive particle on the brush redeposits to the wafer. The level of the brush contamination increased according to the cleaning run time. After cleaning the brush, the level of wafer contamination dramatically decreased. Therefore, the brush cleanliness effect on the cleaning performance and it is important for the brush to be maintained clearly.

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.11-15
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• 2004

Scales, accumulated on some parts of semiconductor equipments such as sputters and CVD during the device fabrication processes, often lower the lifetime of the equipments and production yields. Thus, many equipment parts have be cleaned regularly. In this study, an attempt to establish an effective process to remove scales on the sidewall of collimators located inside the chamber of the sputter was made. The EDX analysis revealed that the scales were composed of Ti and TiN with the columnar structure. Through the trial-and-error experiments, it was found that the etching in the $HNO_3$:$H_2SO_4$:$H_2O$=4:2:4 solution for 5.5 hrs at $67^{\circ}C$, after the oxide removal in the HF solution, and the heat-treatment at $700^{\circ}C$ for 1 min., was the most effective process for the scale removal.

• Korean Chemical Engineering Research
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• v.48 no.3
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• pp.401-404
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• 2010

A spray-type cleaning agent in utilizing dust-remover on PCB was chosen to study. In cleaning of electronic and semiconductor equipment, a substrate(IPC-A-36) was used to test the jet forces of the agent. And according to the jet forces time of the cleaning agent, the corresponding moving distances were compared with the spray times, and for the pollutants of iron powder and dust, the cleaning efficiency was tested with the IPC-A-36 by a weight method. The moving distance increased with the spray cleaning time longer. For a spray cleaning time of 3sec, the cleaning efficiency decreased with the amount of dust and the iron powder. It was also observed that the dust was remarkably removed, compared to the iron powder.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.