• Title/Summary/Keyword: Semiconductive

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Dielectric Characteristics of XLPE and Semiconductive Materials for Power Cable (전력용 케이블의 XLPE와 반도전 재료의 유전특성)

  • 성민우;김정훈;이인성;조경순;이수원;홍진웅
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.73.1-76
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    • 2000
  • The performance of insulate materials gets worse with stress time in power system and because this causes lowering of function and accidents in equipment, development and performance improvement of excellent insulate materials are needed to make stable system. In this paper, to study the influence of degradation in XLPE, inner semiconducting layer and outer semiconducting layer, we studied dielectric characteristics at temperature 25~10$0^{\circ}C$ and frequency 20~1[MHz].

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Electrical properties of XLPE as contents of additive in semicon (반도전내의 첨가제 함량에 따른 XLPE의 전기적 성질)

  • 조준상;서광석;변재동;이건주
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.203-206
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    • 1998
  • Effects of types of semicon compounds on electrical properties of XLPE were investigated. The amounts of charge of XLPE were changed with the contents of additive included in semicon electrodes, but homocharge in cathode was observed. In the aging experiment under high voltage, it was found that semiconductive layer with high impurity contents played an important role in the decrease of ACBD strength of XLPE.

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Properties of Dye-sensitized Solar Cell by Upper Electrodes (상부전극에 의한 염료감응형태양전지의 특성)

  • Mah, Jae-Pyung
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.1
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    • pp.41-47
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    • 2012
  • In DSSC, fundamental process conditions of upper electrode were established and low cost-oriented method for TCO layer was proposed. Especially, prominent properties, that is, open-circuit voltage of 500mV or more and short-circuit current of $25mA/cm^2$ were yielded by 2-step sintering of semiconductive powder layer. High efficiency-DSSC was able to fabricate without high cost-semiconductor apparatus in common laboratory conditions.

THE PROPOSAL OF GAS IDENTIFICATION METHOD BY FUZZY REASONING

  • Konishi, R.;Aoki, T.
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 1993.06a
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    • pp.1285-1288
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    • 1993
  • We tried gas identification by using one semiconductive gas sensor. As a method of gas identification, we used the fuzzy reasoning with fuzzy set of slope of gas pattern which is divided into arbitary interval. As a result, we got a good successful rate for hydrogen 66.6%, propane 79.1%, butane 100%, methane 100%, city gas 79.1% and alcohol 91.6%, respectively.

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Dielectric, Electrical Properties of $TiO_2-SnO_2$ Thin Films Fabricated using Sol-Gel Method (솔젤법에 의해 제작된 $TiO_2-SnO_2$ 박막의 유전적, 전기적 특성)

  • You, Do-Hyun;Lim, Kyung-Bum
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.79-81
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    • 2004
  • $TiO_2-SnO_2$ thin films are fabricated using sol-gel method. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\circ}C$.

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A study on Nano-convergence material technology of semiconductive flame retardant compound to improve impact resistance and electrical properties (내충격성 및 전기적 특성 향상을 위한 반도전성 난연컴파운드의 나노융복합 소재기술에 대한 연구)

  • Han, Jae-Gyu;Jeon, Geun-Bae;Park, Dong-Ha
    • Journal of the Korea Convergence Society
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    • v.12 no.1
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    • pp.193-198
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    • 2021
  • In this study, a nano-convergence material technology that can satisfy the superior impact resistance and electrical properties of the semiconducting flame retardant compound used in the Oversheath layer of Extra-high voltage cables was studied. When some of the carbon black used in the semiconducting flame-retardant compound was replaced with CNT (carbon nano tube), the change in physical properties was analyzed. Through the application of carbon nanotubes with remarkably excellent electrical properties, even a small amount of conductive filler formulations can provide superior electrical properties. In addition, as the total filler amount is reduced based on the compound, the workability is improved, and in particular, flexibility and impact resistance are improved, which is expected to contribute to the improvement of the durability of the cable.

Recent Advances in Scanning Acoustic Microscopy for Adhesion Evaluation of Thin Films

  • Ju, Hyeong-Sick;Tittmann, Bernhard R.
    • Journal of the Korean Society for Nondestructive Testing
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    • v.29 no.6
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    • pp.534-549
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    • 2009
  • As the thin film technology has emerged in various fields, adhesion of the film interface becomes an important issue in terms of the longevity and durability of thin film devices. Diverse nondestructive methods utilizing acoustic techniques have been developed to assess the interfacial integrity. As an effective technique based on the ultrasonic wave focusing and the surface acoustic wave(SAW) generation, scanning acoustic microscopy(SAM) has been investigated for adhesion evaluation. Visualization of film microstructures and quantification of adhesion weakness levels by SAW dispersion are the recent achievements of SAM. To overcome the limitations in the theoretical dispersion model only suitable for perfectly elastic and isotropic materials, a new model has been more recently developed in consideration of film anisotropy and viscoelasticity and applied to the adhesion evaluation of polymeric films fabricated on semiconductive wafers.

Crac-free 나노기공 gold 박막 및 복합박막 제조

  • Kim, Min-Ho;Lee, Jae-Beom;O, Won-Tae;Lee, Dong-Yun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.11.2-11.2
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    • 2009
  • Au-Ag 합금 박막에서 화학적으로 덜 안정한 Ag를 선택적으로 에칭하는 dealloying 기법을 통하여 crack-free 나노기공 gold 박막을 Si 기판에 제조하였다. Au-Ag 합금 박막은 두 가지 방법을 이용하였다: 1) thermal 또는 electron beam 증착법을 이용하여 Au 와 Ag 다층 박막을 Si 기판에 증착시킨 후 열처리를 통한 합금 박막제조; 2) co-thermal 증착법을 이용하여 Au-Ag 합금박막을 Si 기판에 직접 증착. Crack-free 나노기공 gold 박막 제조에 적합한 합금조성을 얻기 위하여 증착 속도, 열처리조건, dealloying 조건등을 조절하였다. Perchloric acid, HClO4 전해질을 이용한 전기화학적 dealloying을 통하여 crack-free 나노기공 gold 박막을 제조하였고, 기공크기를 조절할 수 있었다. 이에 더하여, electrophoretic 방법을 이용하여 나노기공 gold와 semiconductive 양자점 (CdTe 또는 CdSe)의 나노복합박막을 형성시킨 후 특성을 분석하였다.

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Interfacial Effects and Dielectric Properties of 22kV XLPE Sheets (22kV급 XLPE 시이트의 유전특성과 계면효과)

  • 이관우;이종복;조규복;박대희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.6
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    • pp.466-469
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    • 2001
  • In this paper, we evaluated the dielectric properties of XLPE sheet of 22kV power cable, XLPE/semiconductor and XLPE/water/semiconductor depended on electric field and temperature respectively. Dielectric properties and temperature dependency of XLPE sheet of 22kV power cable increase greatly with as temperature increase and have no effect on applied voltage. And we confirmed that tan$\delta$ values in the samples with semiconductor or water layers were higher than those in the samples without them.

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