• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.904-909
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• 2004

We studied the dielectric properties and voltage dependence on slice XLPE sheet from 22 kV and 154 kV power cables. Interface structures are XLPE/semiconductor and XLPE/water/semiconductor capacitance and tan6 of 22 kV, 154 kV were 52/42 pF and $7.4\times{10}/^{-4}, 2.15\times{10}^{-4}$, respectively in these results, the trend was increased with the increase of temperature the tan$\delta$ of XLPE/semiconductive layer and XLPE/water/ semiconductive layer were increased as compared with that of XLPE Temperature reliability of tan$\delta$ was small.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.13-18
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• 1985

Semiconductive $Ba_{0.9}Sr_{0.1}TiO_3$ was prepared by both the Calcining of mixed Oxides (C. M. O) and the Molten Salt Synthesis(M.S.S) methods to investigate the PTCR effects. In the Molten Salt Synthesis method the temperature of calcination for Synthesis of $BaTiO_3$ could be lowered from 110$0^{\circ}C$ to 80$0^{\circ}C$. The M.S.S Specimens had smaller grain size and more homogeneous size distribution at the same sintering temperature as compared with the C. M. O specimens. The M. S. S. specimens showed greater PTCR effects and current variations in the time vs. current charac-teristics than those of C. M. O Specimens.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1794-1796
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• 1996

In order to evaluate the soundness of 10 year service-aged XLPE-insulated 22.9 kV underground distribution cables, semiconductive shields have been characterized. The edge of insulation near the insulation shield shows a drastic decrease of OIT. Impurities such as Ca, Mg, Fe, Cu were detected in both conductor and insulation shields. Their concentrations at the insulation shield are much higher than those at the strand shield. All these facts suggest that the edge of insulation near the insulation shield is degraded considerably, which might be attributed to the oxidation reaction of insulation by a large amount of impurities in the insulation shield.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1062-1067
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• 2007

In this paper, we have investigated thermal properties of semiconductive shield materials for power cables. EEA (Ethylene Ethyl Acrylate) was used for base polymer and TGA (Thermal Gravimetric Analysis) and AFM (Atomic Force Microscope) were investigated with various carbon black and CNT (carbon nanotube) contents. When CNT reinforced composites and conventional composite were investigated with TGA, we knew that thermal properties of CNT reinforced composite were better than them of conventional composite. To investigate roughness, we used AFM. Before and after aging, AFM was applied and after aging, roughness was increased. As a result, suitable CNT and CB(carbon black) content is CNT:CB=50:50.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.65-71
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• 2011

Properties of each layer in DSSC were investigated to improve solar cell characterstics. Also in this study, low costsolar simulator system is fabricated and used. Efficiency of DSSC is better in the case of thinner semiconductive layer, because thick semiconductive layer is acted as resistor. Sc-doped ZnO thin films showed better electrical property by proper donor doping effect. Among the dyes, DSSC containing N719 showed higher efficiency, because N719 have smaller electron affinity and shallow band gap.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.63-69
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• 1987

Effect of MoO3 additiion on the semiconductive BaTiO3 ceramics doped with 0.2 mole% Nb2O5 and their frequency characteristics have been investigated on the view of intergranular barrier layer model through the observation of changes in their electrical properties. The resistivity increases with the increase of MoO3 addition, but the capacitance, the frequency dependence of capacitance and the effect of positive temperature coefficient of resistivity (PTCR) decrease. It is explained by the possible increase in the thickness of potential barrier due to the formation of insulating layer and thus decrease in the degree of energy band bending. Both the PTCR effect and resistivity decrease with the increase of frequency due to the possible elimination of barrier layer at the grain boundary.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.297-304
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• 1989

The dielectric properties of SrTiO3 GBL Capacitor have been investigaetd as a function of the second heat treatment time and the amount of Ta. The grain size of semiconductive SrTiO3 after sintering at 1,46$0^{\circ}C$ for 4 hours in N2/H2 atmosphere increased as the amount of Ta increased, and then decreased as the amount of Ta exceed 0.01 mole. Also, the dielectric constant after the second heat treatment showed the same tendency. When the semiconductive SrTiO2 was second heat treated at 1,10$0^{\circ}C$ in air with varying time, the dielectric constant increased as the second heat treatment time increased up to 60 minutes, and then decreased as the time became longer than 60 minutes.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.117-119
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• 2004

To improve mean-life and reliability of power cable in this study, we have investigated chemical properties showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Chemical properties of specimens was measured by FT-ATR (Fourier Transform Attenuated Total Reflectance). The condition of specimens was a solid sheet. We could observe functional group (C=O, carbonyl group) of specimens through FT-ATR. From these experimental result, the concentration of functional group (C=O) was high according to increasing the content of carbon black. We could know EEA was excellent more than other specimens from above experimental results.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.218-219
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• 2007

This paper researched permittivity of carbon nanotube reinforced semiconductive shield materials for power cable in accordance with carbon nanotube content. Permittivity measured 1[Hz], 1[kHz], 1[Mhz] in frequency range, and range of temperature measured to 100$[^{\circ}C]$ from -50$[^{\circ}C]$. It is stable to 100$[^{\circ}C]$ from -50$[^{\circ}C]$ without different gap. But, in case of CNT:CB=100:0, permittivity decreased by temperature increment. Also, in case of CNT:CB=100:0, it shows highest permittivity. Permittivity of change have little no the power of influence by frequency, but in case of 1[Mhz], CNT:CB=100:0 of specimen decreased more than other frequency. This influence thinks phenomenon of induced electricity dispersion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.223-224
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• 2007

In this paper, we investigated resistant immunity of semiconductive shield materials in power cables' ordinary operation temperature. It used EEA(Ethylene Ethyl Acrylate) in base polymer and measured TGA(Thermal Gravimetric Analysis) in controlling contents. It increased pyrolysis temperature in content increasement of CNT(Carbon Nanotubes). As a result, we knew superiority that CNT:CB is 10:0.