Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Permittivity of Semiconductive Shield Materials in Power Cables by Frequency, Temperature

주파수, 온도에 따른 전력케이블용 반도전 재료의 유전올

  • Yang, Hoon (Department of Electrical Electronic and Information Engineering, Wonkwang University) ;
  • Park, Dae-Hee (Department of Electrical Electronic and Information Engineering, Wonkwang University)
  • 양훈 (원광대학교 전기전자 및 정보공학부) ;
  • 박대희 (원광대학교 전기전자 및 정보공학부)
  • Published : 2007.11.02
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Abstract

This paper researched permittivity of carbon nanotube reinforced semiconductive shield materials for power cable in accordance with carbon nanotube content. Permittivity measured 1[Hz], 1[kHz], 1[Mhz] in frequency range, and range of temperature measured to 100$[^{\circ}C]$ from -50$[^{\circ}C]$. It is stable to 100$[^{\circ}C]$ from -50$[^{\circ}C]$ without different gap. But, in case of CNT:CB=100:0, permittivity decreased by temperature increment. Also, in case of CNT:CB=100:0, it shows highest permittivity. Permittivity of change have little no the power of influence by frequency, but in case of 1[Mhz], CNT:CB=100:0 of specimen decreased more than other frequency. This influence thinks phenomenon of induced electricity dispersion.

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