• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1252-1260
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• 1999

The defect chemistry and electrical characteristics of the grain boundaries of semiconducting SrTiO3 ceramics synthesized with wet-chemically surface-coated powders were investigated. The starting powders were separated into groups of 1-10${\mu}{\textrm}{m}$ 10-20${\mu}{\textrm}{m}$ etc by sedimentation and sieving methods. Na+ ions were absorbed on the powder surfaces by wet chemical-treatment method. The width of the grain boundary ranged up to several nm and the intergranular materials was amorphous. The additives coated on the surface of the powders were observed to be present at the grain boundaries of the ceramics. The diffusion depth of the additives into grains was about 30nm for the SrTiO3 ceramics synthesized with 5w/o coated materials, The threshold voltage grain boundary resistance and boundary potential barrier of the ceramics increased from 0.67V/cm 2.27k$\Omega$ and 0.05eV to 80.9V/cm 13.0k$\Omega$ 1.44eV with increasing the amount of the additives from 0 to 5 w/o respectively .

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.50-50
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.115-120
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• 2004

Perovskite barium-strontium titanate, $(Ba, Sr)TiO_3$ was prepared and effects of $Sb_2$O$_3$ additives on its PTCR properties were investigated. $The (Ba,Sr)TiO_3$ with 0.05～0.25 mol% $Sb_2$$O_3$ showed semiconducting PTCR behavior and anomalous grain growth was also observed when it was sintered above $1330^{\circ}C$. It was considered that charge compensation by doping 8b203 as well as abnormal grain growth by sintering lead to resistivity reduction from insulating to semiconducting transition.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1410-1411
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• 2006

To improve density and smoothness of semiconducting materials in power cable, we have investigated those of semiconducting materials showed by changing the content of carbon black and Carbon Nanotube. They were produced as sheets after pressing for 20 minutes at $180[^{\circ}C]$ with a pressure of $200[kg/cm^2]$. The content of conductive carbon black and Carbon Nanotube were 30[wt%] and 2-6[wt%] respectively. As a result the smoothness was measured by JSM-6400.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1887-1889
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• 2005

To measure the mechanical and structural properties of semiconducting materials in power cable, we have investigated the stress-strain and fractural structure of semiconducting materials showed by changing the content of carbon black. Those were made as sheets after pressing for 20 minutes at $180[^{\circ}C]$ with a pressure of $200[kg/cm^2]$. The contents of conductive carbon black were 20, 30 and 40(wt%), respectively. The stress-strain experiment was measured by TENSOMETER 2000. The SEM experiment was measured by JSM-6400. From above experimental result, Strain was decreased, while stress was increased according to increment of carbon black content. EEA among resins was best the dispersion of carbon back in base resin from SEM measurement.

• Ceramist
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• v.10 no.5
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• pp.49-54
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.22-22
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• 2001

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.571-576
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• 2007

In this paper, we have investigated chemical, mechanical and structural properties by changing the content of carbon nanotube, Which is a component part of semiconductive shield in underground power transmission cable. The multi luminescence spectrometer MLA-GOLDS was used to investigate chemical properties of specimens. Also, the density meter EW-200SG was used to investigate the mechanical properties of specimens, and the FE-SEM S-4300 in Hitachi was used for dispersion of CNT(Carbon nanotube). As a result, the cl intensity, which show the effect of oxidation, was decreased by CNT of 1 [wt%], and the density of semiconductive shield materials with CNT and EEA(Ethylene Ethyl Acrylate) is lower than that for commercial semiconductive shield materials. Also, the properties of dispersion showed an increase according to an increase in the ratio of CNT, and the properties were the best at 5 wt%. Therefore, excellent chemical, mechanical and structural properties can be improved with the small amount of CNT.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.218-223
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• 2004

P-type $\beta$-FeSi$_2$ with a nominal composition of $Fe_{0.92}Mn_{0.08}Si_2$ powders has been produced by mechanical alloying process. As-milled powders were spray dried and consolidated by atmospheric plasma thermal spraying as a rapid sintering process. As-milled powders were of metastable state and fully transformed to $\beta$-$FeSi_2$ phase by subsequent isothermal annealing. However, as-thermal sprayed $Fe_{0.92}Mn_{0.08}Si_2$ consisted of untransformed mixture of $\alpha$-$Fe_2Si_{5}$ and $\varepsilon$-FeSi phases. Isothermal annealing has been carried out to induce transformation to the thermoelectric semiconducting $\beta$-$FeSi_2$ phase. Isothermal annealing at $845^{\circ}C$ in vacuum gradually led to the thermoelectric semiconducting $\beta$-$FeSi_2$ phase transformation, but some residual metallic $\alpha$ and $\varepsilon$ phases were unavoidable even after prolonged annealing. Thermoelectric properties of $\beta$-$FeSi_2$ materials before and after isothermal annealing were evaluated. Seebeck coefficient increased and electric conductivity decreased with increasing annealing time due to the phase transition from metallic phases to semiconducting phases. Thermoelectric properties showed gradual increment, but overall properties appeared to be inferior to those of vacuum hot pressed specimens.