• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.132-132
• /
• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.232-233
• /
• 2005

The Surface of semi-conductive silicone rubber was treated by oxygen plasma to improve adhesion and electric performance in joints between insulating and semi-conductive silicone materials. Surface characterizations were assessed using contact angle measurement and Fourier transform infrared spectroscope (FTIR). Adhesion level was understood from T-peel tests between plasma treated semi-conductive and insulating material. Electrical breakdown strength was measured to understand the charge of electrical performance. From the results, the oxygen plasma treatment produces a significant increase in function group of containing oxygen which can be mainly ascribed to the creation of carbonyl groups on the silicone surface from the strength were improved. Therefore it is concluded then plasma treatment leads to decrease voids originating form poor adhesive, and the improve the adhesion in silicone interface. So we could obtain higher electrical design level of silicone material used for electrical apparatus using oxygen plasma treatment.

• Electrical & Electronic Materials
• /
• 제7권5호
• /
• pp.383-388
• /
• 1994

Deep levels in semi-insulating GaAs were observed by thermally stimulated current(TSC) measurement In the temperature ranges of 100-300K Tl(E$\_$c/-0.18eV), T2(E$\_$c/-0.20eV), T3(E$\_$c/-0.31eV), T4(E$\_$c/-0.40eV), and T5(E$\_$c/-O.43eV) traps have been observed. The TI, T2, and T5 traps seem to be related to the V$\_$As/, V$\_$Ga/-complex, and As$\_$Ga/$\^$++/ respectively. T4 trap is considered with respect to V$\_$Ga/-V$\_$As/ complex.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.254-255
• /
• 2005

In this work, the effects of plasma treatment on surface properties of semi conductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, semiconductive silicone rubber surfaces treated with plasma discharge led to and increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. these results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semi conductive silicone rubber.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2001년도 제21회 학술발표회 초록집
• /
• pp.40-41
• /
• 2001

• Journal of information and communication convergence engineering
• /
• 제9권6호
• /
• pp.725-728
• /
• 2011

Infrared transmission images from GaAs semi insulating wafers were considered for years as directly related to the quantum absorption by electrons on fundamental states of deep centers, especially EL2. The satisfying correspondence of these images with the dislocations revealed by etching or X ray topography or infrared tomography led to the opinion that a strong concentration of EL2 centers was to be expected in the immediate vicinity of the dislocations. More recent work indicates that contrary to the expected behavior the photoqu$\acute{e}$nching of transmission images at T=80K does not appreciably change the image structure itself but more largely the uniform background level of absorption. Such investigations show that the transmission images of isolated dislocations (Indium doped materials) or cell structures of tangled dislocations (undoped materials) can be partly attributed to scattered light; similar operation at T=10K removes the dark features associated to EL2 but still preserves the skeleton of the pattern which is due to scattering. A result of the measurements is that dislocations must not be considered any longer as inexhaustive EL2 reservoirs. The lifetime of the photoqu$\acute{e}$nching mechanism is shown to vary differently for EL2 centers located close to the dislocations or in the matrix. In this paper we will develop the details of infrared image photoqu$\acute{e}$nching experiments in the vicinity of dislocations; undoped and In doped GaAs materials will be shown. These results will be discussed in the light of surface etching experiments.

• Journal of Sensor Science and Technology
• /
• 제8권5호
• /
• pp.421-426
• /
• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• 전기의세계
• /
• 제33권4호
• /
• pp.214-220
• /
• 1984

본고에서는 SI Ga As의 제조방법 및 전도매체들의 깊은 에너지위치(deep level)에 의한 상쇄현상(compensation)을 간략히 설명한 후 넓은 자장영역 (B=0-13T)에서의 Hall 효과 및 magnetoresistance (MR)에 의한 전기적 특성 연구방법을 설명하고, 전도매체의 재결합 현상을 연구할 수 있는 일반화 PME효과 (FA-PME)에 대해 기술한 후 SI Ga As 기판의 응용에 대해 간략히 기술하였다.

• Electrical & Electronic Materials
• /
• 제8권4호
• /
• pp.426-433
• /
• 1995

Effect of boron in GaAs have been investigated by photo induced current transient spectroscopy(PICTS). The starting material was undoped liquid encapsulated Czochralski(LEC) semi insulating GaAs and boron ion implantation at 150keV energy was conducted with dose of 10$\^$12/ and 10$\^$13/ions/cm$\^$2/. In ion implanted samples, the peaks related arsenic vacancy(V$\_$As/) were decreased but complex lattice defect was increased with annealing temperature. U band was observed at ion implanted(10$\^$13/ ions/cm$\^$2/) and thermally treated(550.deg. C) sample. More negative peak was detected after annealing at temperature between 600 and 700.deg. C. The measurement of dark current showed that the formation of B$\_$GA/-V$\_$As/, complex defect and complex lattice defect by ion implantation were a reasonable explanation for the decrease in dark current.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권2호
• /
• pp.113-119
• /
• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.