• Journal of the Korean Chemical Society
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• v.59 no.5
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• pp.397-406
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• 2015

ZnO, II-VI group inorganic compound semi-conductor, has been receiving much attention due to its wide applications in various fields. Since the ZnO has 3.37 eV of a wide band gap and 60 meV of big excitation binding energy, it is well-known material for various uses such the optical property, a semi-conductor, magnetism, antibiosis, photocatalyst, etc. When applied in the field of photocatalyst, many research studies have been actively conducted regarding magnetic materials and the core-shell structure to take on the need of recycling used materials. In this paper, magnetic core-shell ZnFe₂O₄@SiO₂ nanoparticles (NPs) have been successfully synthesized through three steps. In order to analyze the structural characteristics of the synthesized substances, X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared spectroscopy (FT-IR) were used. The spinel structure of ZnFe₂O₄ and the wurtzite structure of ZnO were confirmed by XRD, and ZnO production rate was confirmed through the analysis of different concentrations of the precursors. The surface change of the synthesized materials was confirmed by SEM. The formation of SiO₂ layer and the synthesis of ZnFe₂O₄@ZnO@SiO₂ NPs were finally verified through the bond of Fe-O, Zn-O and Si-O-Si by FT-IR. The magnetic property of the synthesized materials was analyzed through the vibrating sample magnetometer (VSM). The increase and decrease in the magnetism were respectively confirmed by the results of the formed ZnO and SiO₂ layer. The photocatalysis effect of the synthesized ZnFe₂O₄ @ZnO@SiO₂ NPs was experimented in a black box (dark room) using methylene blue (MB) under UV irradiation.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.168-174
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• 1991

Ti-silicide was deposited by sputtering the composite target($TiSi_{2.6}$) on single-Si wafers and oxide on them. The heat treatment temperatures by rapid thermal annealing(RTA) have been varied in the range of $600-850^{\circ}C$ for 20seconds. It was not until RTA temperature was $800^{\circ}C$ that a stable $TiSi_2$ was formed, and the value of resistivity of that phase was $27~29{\mu}{\Omega}-cm$, which seems a little higher than that formed by the reactive method. The result of x-ray diffraction peals showed that till $750^{\circ}C$, C49 $TiSi_2$ phase was dominant, but at $800^{\circ}C$, at last, the phase was transformed into a stable C54 $TiSi_2$ phase. And, the result of x-ray photoeletron spectroscopy(XPS) measurements showed that the composition ratio of Ti and Si was 2 1 in the case of specimens treated at $800^{\circ}C$, The surface roughness of $TiSi_2$, which was condidered a weak point, was improved to a superior value of $17{\pm}1nm$, therefore increasing the possibility of applying $TiSi_2$ to semiconductor devices.

• Journal of the Mineralogical Society of Korea
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• v.21 no.2
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• pp.201-208
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• 2008

Ceria ($CeO_2$) becomes one of important functional nanomaterials and a key abrasive material for chemical-mechanical planarization (CMP) of advanced integrated circuits in silicon semi-conductor technology. Two synthetic crystalline ceria (RT735, RT835) are studied by the Rietveld structural refinement to determine crystallite size and microstrain. Rietveld indices of RT735 and RT835 indicate good fitting with $R_p(%)=8.50$, 8.34; $R_{wp}(%)=13.4$, 13.5; $R_{exp}(%)=11.3$, 11.5; $R_B(%)=2.21$, 2.36; S(GofF: Goodness of fit)=1.2, 1.2, respectively. $CeO_2$ with space group Fm3m show a=5.41074(2), 5.41130(6) ${\AA}$, V=158.406(1), 158.455(3)${\AA}^3$ in dimension. Detailed Rietveld refinement reveals that crystallite size and microstrain are 37.42(1) nm, 0.0026 (RT735) and 72.80(2) nm, 0.0013 (RT835), respectively. It also shows that crystallite size and microstrain of ceria are inversely proportional to each other.

• Korean Journal of Environmental Agriculture
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• v.32 no.2
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• pp.123-127
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• 2013

BACKGROUND: The incandescent bulb and compact fluorescent lamp are widely using as a light sources for daylength extension of chrysanthemum. But, these light sources consume a lot of electricity and have short longevity. A light-emitting diode (LED) is a semi conductor light source. LEDs have many advantages over incandescent light sources including lower energy consumption, longer lifetime. In this study, we investigated the intensity of red light to control flowering of chrysanthemum (Dendranthema grandiflorum cv. "Shinma") by using LEDs. METHODS AND RESULTS: The red (660 nm) and far-red (730 nm) light were irradiated subsequently to investigate photo-reversible flowering responses of chrysanthemum. The flowering of chrysanthemum was inhibited by night interruption with red light but subsequently irradiated far-red light induced the flowering of chrysanthemum. This photoreversibility, reversion of the inductive effect of a brief red light pulse by a subsequent far-red light pulse, is a property of photo responses regulated by the plant photoreceptor phytochrome B. Four different intensity of red light of 0.7, 1.4, 2.1, and $2.8{\mu}mol/m^2/s$ (PAR) were irradiated at growth room in order to determine the threshold for floral inhibition of chrysanthemum. Over $1.4{\mu}mol/m^2/s$ of the red lights irradiated chrysanthemums were not flowered. The plant length, fresh weight, number of leaves, and leaf area of chrysanthemum irradiated with red light were increased by 17%, 36%, 11%, and 48%, respectively, compared to those of compact fluorescent lamp. CONCLUSION(S): The red light and subsequential far-red light showed that the photoreversibility on flowering of chrysanthemum. The red light ($1.4{\mu}mol/m^2/s$ of red LEDs) and white light (50 Lux of compact fluorescent lamp) have the same effect on inhibition of flowering in chrysanthemum. Additionally, the red light increased the plant height and dry weight of chrysanthemum.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.61-71
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• 2014

As the occupancy rate of the flash memory increases in the storage media market for the embedded system and the semi-conductor industry grows, the demand and supply of flash memory is increasing by a big margin. They are especially used in large quantity in the smart phones, tablets, PC, SSD and Soc(System on Chip) etc. The flash memory is divided into the NOR type and NAND type according to the cell arrangement structure and the NAND type is divided into the SLC(Single Level Cell) and MLC(Multi Level Cell) according to the number of bits that can be stored in each cell. Many tests have been performed on NOR type such as BIST(Bulit-In Self Test) and BIRA(Bulit-In Redundancy Analysis) etc, but there is little study on the NAND type. For the case of the existing BIST, the test can be proceeded using external equipments like ATE of high price. However, this paper is an attempt for the improvement of credibility and harvest rate of the system by proposing the BIST for the MLC NAND type flash memory of Finite State Machine structure on which the pattern test can be performed without external equipment since the necessary patterns are embedded in the interior and which uses the MLC NAND March(x) algorithm and pattern which had been proposed for the MLC NAND type flash memory.

• Journal of Service Research and Studies
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• v.5 no.2
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• pp.15-24
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• 2015

The trade balance for the information and communications technology (ICT) industries in 2014 have reached 863 hundred million dollars as the main export products such as smart phone and semi-conductor increase, since the ICT industries have played an important role in economic growth in Korea. Until now, the consistent supporting of government and investment of company have been doing with the growth of ICT industries, as a result, Korea marked as the first in the UN electronic government preparing index, and rank 12 in the network preparing index through the policy of national information and basic plan of inter-industry convergence. However, as the unstable international economic circumstances, ICT industries is faced with the stagnation, and then preemptive development of products and services for ICT convergence industries is needed to continually get definite ICT Korea image. In this paper, the ICT convergence industry is analyzed and forecasted. In specific, the international and domestic market for cloud, 3D convergence, and internet of things is diagnosed. The market for ICT convergence industries is predicted to be 3.6 trillion dollar in the world, and 110 trillion won in domestic. From the analytical results for technology and services development, the preemptive supporting of the technology development and policy for the internet of things and 3D convergence industries is required. In addition to, through the future forecasting by socio-tech matrix method, the policy supporting for the ICT convergence area of healthcare, fintech, artificial intelligence, body platform, and human security is needed.

• Journal of the Korean Institute of Gas
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• v.8 no.4 s.25
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• pp.62-69
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• 2004

It is necessary to eliminate the electric static for the prevention of disasters by electric static discharge, the improvement of production efficiency, the protection of a sensitive electronic devices in the variable manufacturing processes. Then it is handled for elimination of electric static in the painting plant, the film manufacturing plant, the producing semi-conductor factory. This study described on the ideal condition of electric static elimination efficiency by changing of the length of voltage input type eliminator's bar, the length of copper pipe and the gap of electrode and the existence of explosion by inflammable gas with that conditions. As the result, the electric static elimination efficiency has the most ideal value at the 8-11(mm) gap of the earth electrode and needle type electrode each elimination bar and there is not explode at the explosive experiment of inflammable gas with the ideal elimination bar. We can consider that there are some data which are needed for elimination efficiency and it will be able to protect the occurrence of explosion accident inflammable nas in the industrial fields.

• Journal of the Korean Institute of Gas
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• v.20 no.6
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• pp.1-8
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• 2016

Gu-mi hydrogen fluoride leak accident in 2012 was amplified social anxiety for chemical accidents. To relieve these anxieties Off-site Risk Assessment was introduced in 2015. Off-site Risk Assessment is targeted at most chemicals, and most of the high-pressure-toxic gases which are mainly used in high-tech industries such as semi conductor, display, Photovoltaic panels industry are included in the substance of the Off-site Risk Assessment. Since Korean companies occupy a high market share in high-tech industries, high pressure-toxic domestic gas consumption is constantly increasing. Accordingly, it is expected to increase the possibility of accidents. In accordance with the circumstances, this study was to conducted Consequence Analysis(CA) about high pressure-toxic gases those are high demand in domestic. CA was used for ALOHA developed by US EPA & US NOAA and the CA result of Arsine was the largest at 4,700 m. CA results are expected to be utilized for determining the effective Safety distances when high pressure-toxic gas leak.

• Journal of the Korean Institute of Gas
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• v.27 no.2
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• pp.79-85
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• 2023

Recently, in the semiconductor process, large companies are seeking process changes from memory semiconductors to the foundry due to the increase in demand due to the 4th industry. industry is expanding. The characteristics of special gases and precursors, which are raw materials used to produce these semiconductor chips, are toxic, pyrophoric, inflammable, and corrosive. These semiconductor raw materials are operated in a closed system and do not leak to the outside during normal times, but when leaked, they spread to the inside of the gas box, and when proper ventilation is not provided inside the gas box, they spread to the outside, causing fires, explosions, or toxic substances. It can lead to major accidents such as leakage. Recently, there have been cases of accidents in which hazardous materials leaked from the closed system of the semi conductor process and spread to the inside and outside of the gas box. . In this study, we propose preventive measures based on the case of an accident in which raw material leaked from the VCR fitting, which is the connection part of the semiconductor raw material transfer pipe, and spread to the outside of the gas box.

• Journal of Korean Society of Environmental Engineers
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• v.29 no.6
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• pp.715-721
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• 2007

Residual calcium concentration is high, in general, at the effluent of the fluoride removal process in the electronics industry manufacturing semiconductor and LCD. To increase the stability of the membrane process incorporated for reuse of wastewater, the residual calcium is required to be pre-removed. Hyperkinetic Vortex Crystallization(HVC) process was installed in the electronics industry manufecturing semi conductor as a pilot scale for accelerating calcification of calcium ion. Compared to the conventional soda ash method, the 31% higher calcium removal efficiency was achieved when HVC was applied at the same sodium carbonate dosage. In order to maintain the economic calcium removal target of 70% preset by manufacturer, the dosing concentration of the soda ash was 530 mg/L based on influent flowrate. The seed concentration in the reactor was one of the critical factors and should be maintained in the range of $800\sim1,200mg$ SS/L to maximize the calcium removal efficiency. The calcite production rate was 0.30 g SS/g $Na_2CO_3$ in the average. The economic HVC passing time of the mixture was in the range of $2\sim5$ times. Relatively, stable calcium concentration was maintained in the range of $30\sim72$ mg/L(average 49 mg/L) although the calcium concentration in the feed was severely fluctuated with $74\sim359$ mg/L(average 173 mg/L). The HVC process was characterized as environment-friendly technology reducing chemical dosage and chemical sludge production and minimizing maintenance cost.