• Title/Summary/Keyword: Self-bias

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Estimation of Wage Equation for College Graduates with Correction for Selection Bias upon Working State (대졸청년층의 취업지역에 대한 자기선택을 고려한 임금함수 추정)

  • Lee, Chiho
    • Journal of Labour Economics
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    • v.42 no.3
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    • pp.39-74
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    • 2019
  • In this paper, the wage equations of local labor markets for college graduates in Korea are estimated by Dahl(2002)'s methodology to correct for selection bias. The results suggest that the variations of coefficients in wage equations across the local labor markets are mostly remained after correcting for selection bias. The gender wage gap is hardly affected by selection bias. The variations of return to education and the major premium are reduced about 18% and 11% respectively. Meanwhile, the selection bias is negligible in the national capital region, which suggests that college graduates prefer the national capital region regardless of their gender, level of education, and major.

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A Study on Air Traffic Controllers' Cultural bias and Their Response on Abnormal Situations (항공교통관제사의 문화적 편향(Cultural Bias)에 따른 위기 대응 연구)

  • Kim, Geun-Su;Cho, Sung-Hwan
    • Journal of the Korean Society for Aviation and Aeronautics
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    • v.26 no.4
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    • pp.64-75
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    • 2018
  • A status of air traffic controller is a government officer and air traffic controllers who work at airport are divided by duty rating and work experience. Abiding by law, rules and regulation, air traffic controllers are working together based on mutual trust. This paper's theoretical background is based on cultural bias theory. The theory divide people group into four groups according to cultural bias such as fatalism, hierarchy, individualism and egalitarianism. A research model was designed how such four cultural bias could affect air traffic controller's risk response in case of emergency or abnormal situation during their work. Depend on empirical research, it was found that air traffic controllers perceived they had been more biased to fatalism than hierarchy. The characteristics of fatalism group are as follows: first of all, they follow rigid rules and regulation. However, they have less self-efficacy compared to other government officers. According to structural equation model, air traffic controller's fatalism had a significant negative effect on organizational royalty. Their royalty, however, had a very significant positive effect on planning response and immediate response.

Factors Associated with the Weight Bias Internalization of the Girls in Early Adolescence (초기 여자 청소년의 체중편견내재화 관련 요인)

  • Ra, Jin Suk;Kim, Soon Ok
    • Research in Community and Public Health Nursing
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    • v.32 no.2
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    • pp.140-149
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    • 2021
  • Purpose: This study aimed to identify factors (biological, psychological, interpersonal, and contextual factors) associated with the weight bias internalization of the Korean girls in early adolescence. Methods: This study used a cross-sectional design. Data was collected from 233 girls aged 12~14 years with a self-reported questionnaire. With multiple regression analysis, the factors associated with the weight bias internalization of the girls in early adolescence were analyzed. Results: Of psychosocial factors, fear to fat (anti-fat attitude) (β=.43, p<.001) was associated with the weight bias internalization of the girls in early adolescence. In addition, attachment with teachers (β=-.11, p=.029) of an interpersonal factor and perceived socio-cultural pressure regarding weight control (β=.34, p<.001) of a contextual factor were associated with the weight bias internalization of the girls in early adolescence. Conclusion: For releasing the weight bias internalization of the girls in early adolescence, decreasing anti-fat attitude and socio-cultural pressure regarding weight control should be primarily required through social efforts including community and school based interventions.

A Study on Fabrication and Performance Evaluation of Wideband Receiver using Bias Stabilized Resistor for the Satellite Mobile Communications System (바이어스 안정화 저항을 이용한 이동위성 통신용 광대역 수신단 구현 및 성능 평가에 관한 연구)

  • 전중성;김동일;배정철
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.3 no.3
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    • pp.569-577
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    • 1999
  • A wideband RF receiver for satellite mobile communications system was fabricated and evaluated of performance in low noise amplifier and high gain amplifier. The low noise amplifier used to the resistive decoupling and self-bias circuits. The low noise amplifier is fabricated with both the RF circuits and the self-bias circuits. Using a INA-03184, the high gain amplifier consists of matched amplifier type. The active bias circuitry can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilized resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 55 dB in gain, 50.83 dBc in a spurious level and less than 1.8 : 1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio is a 43.15 dB/Hz at a 1 KHz from 1537.5 MHz.

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Learning Method of Data Bias employing MachineLearningforKids: Case of AI Baseball Umpire (머신러닝포키즈를 활용한 데이터 편향 인식 학습: AI야구심판 사례)

  • Kim, Hyo-eun
    • Journal of The Korean Association of Information Education
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    • v.26 no.4
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    • pp.273-284
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    • 2022
  • The goal of this paper is to propose the use of machine learning platforms in education to train learners to recognize data biases. Learners can cultivate the ability to recognize when learners deal with AI data and systems when they want to prevent damage caused by data bias. Specifically, this paper presents a method of data bias education using MachineLearningforKids, focusing on the case of AI baseball referee. Learners take the steps of selecting a specific topic, reviewing prior research, inputting biased/unbiased data on a machine learning platform, composing test data, comparing the results of machine learning, and present implications. Learners can learn that AI data bias should be minimized and the impact of data collection and selection on society. This learning method has the significance of promoting the ease of problem-based self-directed learning, the possibility of combining with coding education, and the combination of humanities and social topics with artificial intelligence literacy.

Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors

  • Kim, Jonghwa;Choi, Sungju;Jang, Jaeman;Jang, Jun Tae;Kim, Jungmok;Choi, Sung-Jin;Kim, Dong Myong;Kim, Dae Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.5
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    • pp.526-532
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    • 2015
  • We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

Effect of RF Bias on Electron Energy Distributions and Plasma Parameters in Inductively Coupled Plasma (유도 결합 플라즈마에서 플라즈마 변수와 전자 에너지 분포에 대한 극판 전력 인가의 영향)

  • Lee, Hyo-Chang;Chung, Chin-Wook
    • Journal of the Korean Vacuum Society
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    • v.21 no.3
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    • pp.121-129
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    • 2012
  • RF biased inductively coupled plasma (ICP) is widely used in semiconductor and display etch processes which are based on vacuum science. Up to now, researches on how rf-bias power affects have been focused on the controls of dc self-bias voltages. But, effect of RF bias on plasma parameters which give a crucial role in the processing result and device performance has been little studied. In this work, we studied the correlation between the RF bias and plasma parameters and the recent published results were included in this paper. Plasma density was changed with the RF bias power and this variation can be explained by simple global model. As the RF bias was applied to the ICP, increase in the electron temperature from the electron energy distribution was measured indicating electron heating. Plasma density uniformity was enhanced with the RF bias power. This study can be helpful for the control of the optimum discharge condition, as well as the basic understanding for correlation between the RF bias and plasma parameters.

A Dual-Structured Self-Attention for improving the Performance of Vision Transformers (비전 트랜스포머 성능향상을 위한 이중 구조 셀프 어텐션)

  • Kwang-Yeob Lee;Hwang-Hee Moon;Tae-Ryong Park
    • Journal of IKEEE
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    • v.27 no.3
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    • pp.251-257
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    • 2023
  • In this paper, we propose a dual-structured self-attention method that improves the lack of regional features of the vision transformer's self-attention. Vision Transformers, which are more computationally efficient than convolutional neural networks in object classification, object segmentation, and video image recognition, lack the ability to extract regional features relatively. To solve this problem, many studies are conducted based on Windows or Shift Windows, but these methods weaken the advantages of self-attention-based transformers by increasing computational complexity using multiple levels of encoders. This paper proposes a dual-structure self-attention using self-attention and neighborhood network to improve locality inductive bias compared to the existing method. The neighborhood network for extracting local context information provides a much simpler computational complexity than the window structure. CIFAR-10 and CIFAR-100 were used to compare the performance of the proposed dual-structure self-attention transformer and the existing transformer, and the experiment showed improvements of 0.63% and 1.57% in Top-1 accuracy, respectively.

Interfacial Energetics of All Oxide Transparent Photodiodes

  • Yadav, Pankaj;Kim, Hong-sik;Patel, Malkeshkumar;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.390.1-390.1
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    • 2016
  • The present work explains the interfacial energetics of all oxide transparent photodiodes. The optical, structural and morphological of copper oxides were systematically analyse by UV-Visible spectrometer, X-Ray diffraction, Raman spectroscopy, Scanning electron microscopy (SEM) and Atomic force microscopy measurements (AFM). The UV-Visible result exhibits optical bandgap of Cu2O and CuO as 2.2 and 2.05 eV respectively. SEM and AFM result shows a uniform grain size distribution in Cu2O and CuO thin films with the average grain size of 45 and 40 nm respectively. The results of Current-Voltage and Kelvin probe force microscope characteristics describe the electrical responses of the Cu2O/ZnO and CuO/ZnO heterojunctions photodiodes. The obtained electrical response depicts the approximately same knee voltages with a measurable difference in the absolute value of net terminal current. More over the present study realizes the all oxide transparent photodiode with zero bias photocurrent. The presented results lay the template for fabricating and analysing the self-bias all oxide transparent photodetector.

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Investigation of the residue formed on the silicon exposed to $C_4$F$_8$ helicon wave plasmas (고선택비 산화막 식각공정시 $C_4$F$_8$ 헬리콘 웨이브 플라즈마에 노출된 실리콘 표면의 잔류막 관찰)

  • 김현수;이원정;염근영
    • Journal of the Korean institute of surface engineering
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    • v.32 no.2
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    • pp.93-99
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    • 1999
  • Surface polymer layer formed on the silicon wafer during the oxide overetching using $C_4F_8$/ helicon wave plasmas and their characteristics were investigated using spectroscopic elipsometry, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. Overetch percentage and dc-self bias voltage were varied to investigate the effects on the characteristics of the polymers remaining on the overetched silicon surface. The increase of bias voltage from -80 volts to -120 volts increased the C/F ratio and carbon bondings such as C-C, $C-CF_x$/, and C-Si in the polymer while reducing the thickness of the polymer layer. However, the increase of the overetch percentage from 50% to 100% did not change the composition of the polymer layer and the carbon bondings in the polymer layer remained same even though it increased the polymer thickness. The polymer layer formed at the higher dc-self bias voltage was more difficult to be removed by the following various post-etch treatments compared to that formed at the longer overetch percentage.

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