• Title/Summary/Keyword: Self-assembled Monolayer (SAM)

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Threshold Voltage Shift in (4-pentylphenylethynyl)-dithienyl-anthracene Organic Thin-film Transistor with Self-assembled Monolayer

  • Lee, Sun-Hee;Kim, Sung-Hoon;Han, Seung-Hoon;Choi, Min-Hee;Jeong, Yong-Bin;Choo, Dong-Joon;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.858-860
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    • 2009
  • We have applied self-assembled monolayer to make high performance and stable OTFT on the organic gate dielectric. The ${\beta}$-phenethyltrichlorosilane (SAM) was coated on the organic gate dielectric and then active layer was printed. Significant improvements in on-currents and threshold voltage shift were achieved for the SAM treated devices compared to device without SAM.

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Micro/Nano Adhesion and Friction Properties of Mixed Self-assembled Monolayer (혼합 자기 조립 단분자막의 마이크로/나노 응착 및 마찰 특성)

  • Yoon Eui-Sung;Oh Hyun-Jin;Han Hung-Gu;Kong Hosung;Jhang Kyung Young
    • Tribology and Lubricants
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    • v.20 no.2
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    • pp.51-57
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    • 2004
  • Micro/nano adhesion and friction properties of mixed self-assembled monolayer (SAM) with different chain length for MEMS application were experimentally studied. Many kinds of SAM having different spacer chains(C6, C10 and C18) and their mixtures (1:1) were deposited onto Si-wafer, where the deposited SAM resulted in the hydrophobic nature. The adhesion and friction properties between tip and SAM surfaces under nano scale applied load were measured using an atomic force microscope (AFM) and under micro scale applied load were measured using ball-on-flat type micro-tribotester. Surface roughness and water contact angles were measured with SPM (scanning probe microscope) and contact anglemeter. Results showed that water contact angles of mixed SAMs were similar to those of pure SAMs. The morphology of coating surface was roughened as mixing of SAM. Nano adhesion and nano friction decreased as increasing of the spacer chain length and mixing of SAM. Micro friction was decreased as increasing of the spacer chain length, but micro friction of mixed SAM showed the value between pure SAMs. Nano adhesion and friction mechanism of mixed SAM was proposed in a view of stiffness of spacer chain modified chemically and topographically.

Micro/nano adhesion and friction properties of mixed self-assembled monolayer (혼합 Self-assembled monolayer의 마이크로/나노 응착 및 마찰 특성)

  • Oh Hyun-Jin;Yoon Eui-Sung;Han Hung-Gu;Kong Hosung;Jhang Kyung Young
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2003.11a
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    • pp.56-63
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    • 2003
  • Micro/nano adhesion and friction properties of mixed self-assembled monolayer (SAM) with different chain length for MEMS application were experimentally studied. Many kinds of SAM having different spacer chains(C6, C10 and C18) and their mixtures (1:1) were deposited onto Si-wafer, where the deposited SAM resulted in the hydrophobic nature. The adhesion and friction properties between tip and SAM surfaces under nano scale applied load were measured using an atomic force microscope (AFM) and micro scale applied load were measured using ball-on-flat type micro-tribotester. Surface roughness and water wetting angles were measured with SPM (scanning probe microscope) and contact anglemeter. Results showed that wetting angles of mixed SAMs showed the similar value of pure SAMs. The coating surface morphology was increased as mixing of SAM. Nano adhesion and nano friction decreased as increasing of the spacer chain length and mixing of SAM. Micro friction was decreased as increasing of the spacer chain, but micro friction of mixed SAM showed the value between pure SAMs. Nano adhesion and friction mechanism of mixed SAM was proposed in a view of stiffness of spacer chain modified chemically and topographically.

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The Effect of Process Condition in Nano-molding on the Property of SAM (self-assembled monolayer) (나노성형 공정 조건이 자기조립 단분자막의 이형 특성에 미치는 영향)

  • Lee, Nam-Seok;Han, Jeong-Won;Kang, Shin-Ill
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2005.10a
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    • pp.83-86
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    • 2005
  • In this study, SAM (self-assembled monolayer) was applied as an anti-adhesion layer in the nano molding process, to reduce the surface energy between the nano-stamper and the moldeded polymeric nano patterns. Before depositing SAM on the stamper, the nickel stamper was pretreated to remove oxide on the nickel stamper surface. Then, using the solution deposition method, alkanethiol SAM as an anti-adhesion layer was deposited on nickel surface. To examine the effectiveness of the SAM deposition on the metallic nano stamper, the contact angle and the lateral friction force were measured at the actual processing temperature and pressure for the case of nano compression molding and at the actual UV dose for the case of nano UV molding. The surface energy due to SAM deposition on the nickel nano stamper markedly decreased and the high hydrophobic quality of SAM on the nickel stamper maintained under the actual molding environments.

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Effect of $Ga^+$ Ion Beam Irradiation On the Wet Etching Characteristic of Self-Assembled Monolayer ($Ga^+$ 이온 빔 조사량에 따른 자기 조립 단분자막의 습식에칭 특성)

  • Noh Dong-Sun;Kim Dea-Eun
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.326-329
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    • 2005
  • As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing fur fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to $Ga^+$ ion beam irradiation. Also, minimized beam spot radius (sub-tens nanometer) can be applied to FIB processing. With the ultimate goal of optimizing nano-scale pattern fabrication process, interaction between SAM coated specimen and $Ga^+$ ion dose during FIB processing was observed. From the experimental results, adequate ion dose for machining SAM material was identified.

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Improved charge balance in quantum dot light-emitting diodes using self-assembled monolayer (자기조립단분자막을 이용한 양자점 발광다이오드의 전하 균형도 개선)

  • Sangwook Park;Woon Ho Jung;Yeyun Bae;Jaehoon Lim;Jeongkyun Roh
    • Journal of IKEEE
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    • v.27 no.1
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    • pp.30-37
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    • 2023
  • To improve the efficiency and stability of colloidal quantum dot light-emitting diodes (QD-LEDs), it is essential to achieve charge balance within the QD emissive layer. Zinc oxide (ZnO) is widely used for constructing an electron transport layer in the state-of-the-art QD-LEDs, but spontaneous electron injection from ZnO often results in excessive electrons in QDs that significantly deteriorate the performance of QD-LEDs. In this study, we demonstrated the improved performance of QD-LEDs by modifying the electron injection property of ZnO with self-assembled monolayer (SAM)-treatment. As a result of improved charge balance, the external quantum efficiency and maximum luminance of QD-LEDs with SAM-treatment were improved by 25% and 200%, respectively, compared to the devices without SAM-treatment.

Recent Trends in the Development of Organic Thin Film Transistor Including SAM Dielectric (SAM 절연체를 이용한 유기박막트랜지스터 개발의 최근 동향)

  • Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • v.2 no.1
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    • pp.13-17
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    • 2009
  • A newly developed OTFT manufacturing process using the combination of self-assembly techniques and vapor phase polymerization method revealed that a thick $SiO_2$ dielectric layer (100~200 nm) is not well compatible with conducting polymer electrode, thereby resulting in still recognizable contact resistance, unstable $V_{th}$ and leaking off current. A couple of very recent studies showed that this issue may be solved by replacing such inorganic dielectric with a self-assembled monolayer or multilayer (organic) dielectric. Therefore, this short review introduces recent trends in the development of high performance thin film transistor consisting of both organic semiconductor and SAM dielectric.

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Surface Damage Characteristics of Self-Assembled Monolayer and Its Application in Metal Nano-Structure Fabrication (자기 조립 분자막의 표면파손특성 및 미세 금속 구조물 제작에의 응용)

  • Sung, In-Ha;Kim, Dae-Eun
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.05a
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    • pp.40-44
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    • 2002
  • The motivation of this work is to use SAM(Self-Assembled Monolayer) for developing a rapid and flexible non-photolithographic nano-structure fabrication technique which can be utilized in micro-machining of metals as well as silicon-based materials. The fabrication technique implemented in this work consists of a two-step process, namely, mechanical scribing followed by chemical etching. From the experimental results, it was found that thiol on copper surface could be removed even under a few nN normal load. The nano-tribological characteristics of thiol-SAM on various metals were largely dependent on the native oxide layer of metals. Based on these findings, nano-patterns with sub-micrometer width and depth on metal surfaces such as Cu, Au and Ag could be obtained using a diamond-coated tip.

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Hyperthermal Collision-induced Dissociation of Bromotoluene Radical Cations at Self-Assembled Monolayer Surfaces

  • Jo, Sung-Chan;Augusti, Rodinei;Cooks, R. Graham
    • Mass Spectrometry Letters
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    • v.2 no.1
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    • pp.24-27
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    • 2011
  • Hyperthermal ion/surface collisions of bromotoluene radical cations were studied using perfluorinated (F-SAM) and hydroxyl-terminated (OH-SAM) self-assembled monolayer surfaces in a tandem mass spectrometer with BEEQ geometry. The isomers were differentiated by ion abundance ratios taken from surface-induced dissociation (SID). The dissociation rate followed the order of ortho > meta > para isomers. The peak abundance ratio of m/z 51 to m/z 65 showed the best result to discern the isomers. A dissociation channel leading to tolylium ion was suggested to be responsible for the pronounced isomeric differences. The capability of SID to provide high-energy activation with narrow internal energy distribution may have channeled the reaction into the specific dissociation pathway, also facilitating small differences in reaction rates to be effective in the spectral time window of this experiment. All of the molecular ions experiencing reactive collisions with the F-SAM surface undergo transhalogenation, in which a fluorine atom on the surface replaces the bromine in the incoming ions. This reactive collision was dependent on the laboratory collision energy occurring in ca. 40.75 eV range.

Wet Chemical Surface Modification of ITO by Self Assembled Monolayer for Organic Thin Film Transistor (유기 트랜지스터를 위한 자가조립단층을 이용한 ITO의 습식 표면개질)

  • Jee, Seung-Hyun;Kim, Soo-Ho;Ko, Jae-Hwan;Park, Hoon;Lee, Kwang-Hoon;Yoon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.450-450
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    • 2007
  • Indium tin oxide (ITO), which is used as an electrode in organic thin film transistors (OTFT), was modified with a self-assembled monolayer (SAM) by wet chemical surface modification. The surface of the ITO was treated by dipping method in a solution of 2-chloroethane phosphonic acid (2-CEPA) at room temperature. The work function in the ITO which was modified with the SAM in the 2-CEPA had 5.43eV. A surface energy and a transmittance were unchanged in an error range. On this study, therefore, possibility of ohmic contact is showed in the interface between the ITO and the organic semiconductors. These results suggest that the treatment of the ITO with the SAM can greatly enhance the performance of the OTFT.

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