• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2008년도 추계학술대회 논문집
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• pp.102-105
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• 2008

To investigate the evolution of deformation texture during cold rolling deformation, cold rolling process on a commercial Al-5% Mg sheet was carried out at different rolling reduction ratio. The evolution of annealing texture in cold-rolled Al-5% Mg sheet was also investigated. The evolution of recrystallization texture during annealing process strongly depends on the rolling reduction ratio before heat treatment. Visco-plastic self-consistent (VPSC) polycrystal model was used to predict r-value anisotropy of the cold-rolled and annealed Al-5% Mg sheets. The change of volume fraction for the major texture components was also analyzed.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.584-592
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• 1996

Coupling optical modulator which on the $LiTaO_3$ substrate is fabricated by using proton exchange method and self-aligned method. Proton exchange of proton diffusion method was applied to pattern a waveguide on $LiTaO_3$ substrate. The annealing at >$400^{\circ}C$ was carded out to control waveguide width and depth. The depths of the two annealed optical waveguides, which were measured by using .alpha.-step, were 1.435 K.angs. and 1.380 K.angs. Using .alpha.-step facility, we examined that the width of waveguides is increased from 5.mu.m to 6.45 .mu.m and 6.3.mu.m due to the annealing effects. The process of proton exchange was done at 150.deg. C for 120 min, >$200^{\circ}C$ for 60 min and annealing process was done at >$400^{\circ}C$ for 90 min, >$400^{\circ}C$ for 60 min. The high speed coupling optical modulator has very good figures of merits; the measured high frequency power were achieved.

• 대한전자공학회논문지
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• 제27권1호
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• pp.81-90
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• 1990

In this study, ion beam deposited tungsten thin film for gate material of GaAs SAGFET(Self Aligned Gate FET) was annealed from 800\ulcorner to 900\ulcorner using RTA and detailed investigations of structural and electrical characteristics of this film were carried out using four-point probe, XRD, SEM, AES and current-voltage measurement. Investigated results showed phase of as deposited tungsten film was fine grain \ulcornerphase and phase tdransformation of this film into \ulcornerphase occured at annealing condition of 900\ulcorner, 6sec. But regardless of phase transformation, electrical characteristics of tungsten film were very stable to 900\ulcorner and in case of 900\ulcorner, 4sec annealing condition Schottky barrier height obtained from 10 diodes measurements was 0.66 + 0.003 eV.

• Elastomers and Composites
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• 제34권1호
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• pp.45-52
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• 1999

본 논문에서는 미세 상분리된 블럭 공중합체 박막의 특이상에서 금 입자들이 어떻게 자기응집(self assemble) 되고 잘 배열된 패턴을 형성하는지를 살펴보았다. 본 연구에서는 원통형 모폴로지를 갖는 PS-PB-PS 삼블럭 공중합체(30wt% PS) 박막(${\sim}100nm$)을 0.1wt% 톨루엔 용액으로부터 캐스팅하여 고분자 박막 형판(template)으로 사용하였다. 각각의 상이한 용매 증발조건으로부터 PB matrix내에 수평배열 PS cylinder와 수직 PS cylinder를 함께 갖는 막이 얻어졌다. 블럭 공중합체박막의 표면 및 bulk 몰폴로지를 살펴보기 위하여 단면투과전자현미경(TEM)을 사용하였다. Nano-scale 패턴을 얻기 위하여는 소량의 금입자를 블럭 공중합체 박막상에 증발시켰다. 캐스팅된 상태 그 대로의 박막형판이 사용되어질때 금입자들은 표면 장력이 적은 PB상에 우선적으로 자기응집(self as-semble)하여 비교적 잘 배열된 nano-scale의 패턴을 형성하였다. 그러나 열처리(annealing)에 의하여 표면장력이 적은 PB-rich충이 형성된 후에는 금입자의 자기응집에 의한 패턴은 관찰되지 않았다.

• 전기학회논문지P
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• 제65권1호
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• pp.53-56
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• 2016

Because of the low pollution resistance of the porcelain electrical insulator itself, in this work the anti-pollution performance of insulator was improved by using the functional coating. The ceramic substrates that components were same as the porcelain electrical insulator were used in this experiment. The functional films were coated on the ceramic substrate by using a spray coating method, and then the coated substrate were annealed under different coating condition such as natural curing and annealing temperature of $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$. Then, the contact angles of the coated surfaces were measured and the minimum angle ($8.3^{\circ}$) was obtained at $400^{\circ}C$. The anti-contamination properties were measured, revealing that as the contact angle decreased, the anti-contamination properties improved. The hardness and adhesion were small at the natural curing condition however the excellent mechanical properties were obtained under higher temperature annealing.

• 전자공학회논문지A
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• 제31A권8호
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• pp.91-99
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• 1994

Damage induced by Si ion implantation and its annealing behavior during rapid thermal annealing were investigated by cross-sectional TEM (transmission electron microscopy) and RB ( Rutherford backscattering) spectrum. 150keV and 50keV Si ions were implanted in Si (100) at room temperature with doses of 2${\times}10^{15}cm^{-2}$. And 100keV Si ions were implanted in Si with doses from 1${\times}10^{14}cm^{-2}$. A variety of damage structures were generated by Si ion implantation such as continuous amorphous layer extending to the surface buried amorphous layer and damage clusters. Damage clusters are annealed out at the lower annealing temperature of 550 $^{\circ}C$. However, event at the temperature of 110$0^{\circ}C$ end of range loops remain in the original lower amorphous/crystal interface in the case of continuous and buried amorphous layer formation. Extended defects in the shape of zipper dislocations are also observed at the middle of the recrystallized region in the buried amorphous layer.

• 한국세라믹학회지
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• 제40권3호
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• pp.213-218
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• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• 한국재료학회지
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• 제5권6호
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• pp.743-747
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• 1995

비정질 PEEK필름의 self-bonding공정시 조건 변화에 따르는 결정화도(crystallinlty)변화가 self-bonding강도에 미치는 영향을 고찰하기 위하여, 비정질 PEEK필름을 그 2차천이온도(Tg=143$^{\circ}C$)와 용융점(Tm=335$^{\circ}C$) 사이의 여러 온도에서 일정 압력 하에서 접합 시간을 달리하여 self-bonding시킨 후, 각 조건에서 개발된 self-bonding강도를 측정하고, 이에 따르는 결정화도 변화를 DSC를 이용하여 비교 분석하였다. 결정화도는 접합공정변수(시간과 온도)의 함수로서 증가하였고, 동일한 값의 결정화도를 보이는 시편들의 경우에도 접합공정의 조건에 따라 결과적인 self-bonding강도는 큰 차이가 있음을 보였다. 또한 접합후 시편을 상온으로 노냉시키는 동안에는 더 이상의 결정화 현상이 일어나지 않음이 DSC분석을 통하여 판명되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.181-181
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• 1999

Self-assembled monolayers(SAMs) of alkanethiol have been formed on the Cu(111) surfaces in vacuum. The thermal behavior of octanethiol-based SAMs on the Cu(111) surface have been examined in ultrahigh vacuum. Using X-ray photoelectron spectroscopy (XPS), it is found that the monolayers are stable up to about 500K in vacuum. Decomposition is signaled by a decrease in the intensity of C ls peak, accompanied by an increase of the intensity of the Cu 2p peak. However, the intensity of the S 2p peak doesn't change much as a function of annealing temperature. Thermal the decomposition mass spectra show that n-alkene is the predominant species desorbing from the surface in the 500-600K temperature range. The totality of these data leads to the conclusion that the monolayers decompose through the S-C bond cleavage by hydrogen elimination reaction, resulting in the desorption of hydrocarbon moiety as n-alkene. Following this initial decomposition step, Cu2S layers are observed on the surface. For comparison, attempts were also made to examine the thermal behavior of octanethiol-based SAMs on the Cu(111) surface in air. It has been shown that the SAMs on the Cu(111) surfaces begin to desorb with the oxidation of the thiolate to sulfonate at 400K. Upon annealing to 450K, the monolayer has almost completely desorbed as indicated by the virtual disappearance of the S 2p peak.