• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.351-356
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• 1995

A optical switch which on the LiNbO$_3$substrate is fabricated by using proton exchange method and self-alignet method. The annealing at 400[$^{\circ}C$] was carried out to control waveguide width and depth. A self-aligned method, which doesn\`t need the additional mask precesses, was applied to simplify the fabrication processes and to maximize efficiency of electric field application. The depths of the two annealed optical waveguides, which were measured by using ${\alpha}$-step, ware 1.435[K${\AA}$] and 1,380[K${\AA}$]. Using ${\alpha}$-step facility, we examined that the width of waveguides is increased from 5[$\mu\textrm{m}$] to 6.45[$\mu\textrm{m}$] and 6.3[$\mu\textrm{m}$] due to the annealing effects. The process of proton exchange was done at 400[$^{\circ}C$] for 60[min] and annealing process was done at 400[$^{\circ}C$] for 60[min]. The high speed optical modulator has very good figures of merits: the measured voltage of the input waveguide power is 3.5[V], the voltage of the coupling waveguide power is 3.9[mV], and -29.5[dB] crosstalk and 8[V] switching voltage were achieved.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.557-562
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• 2012

Self-organized ruthenium (Ru) dots were fabricated by $400^{\circ}C$ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the $400^{\circ}C$ RTA conditions for 10, 30 and 60 seconds on all Si(100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates. Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si(100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < $20^{\circ}$ wetting angle.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.411-416
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• 2016

Benzothienobenzothiophene ($C_8-BTBT$) is a soluble organic small molecule material with high crystallinity resulting from its strong self-organizing properties. In addition, the high mobility and easy fabrication of $C_8-BTBT$ make it very attractive in terms of organic thin-film transistors. In this work, we made $C_8-BTBT$ thin films by using the zone-casting method; we also used an organic solvent to treat the devices with solvent vapor annealing to improve the electrical properties. As a result, we confirmed improved mobility, threshold voltage, and subthreshold swing after solvent vapor annealing. To prove the effect of solvent vapor annealing, we used the simultaneous extraction model to extract the contact resistance from the current-voltage curve. We confirmed that the electrical properties improved with decreasing contact resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.81-85
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• 1995

A guide-wave electro-optical modulatored direct-ional coupler 1X2 was fabricated on LiNbO$_3$ by proton exchange with self-aligned method After proton exchange process, the waveguide is formed by annealing process, The relationship between refractive index change of waveguide and maximun output was studied a long the annealing time. A self-alinged method was used to simplify the fabrication process of the waveguide and the maximize the efficiency of electric field. The modulatored directional coupler 1${\times}$2 has very good figures of merits; The measured crosstalk was -29.5[dB] and the modulating voltage of 8.0[V].

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.12
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• pp.3236-3245
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• 1994

The nesting of two-dimensional patterns onto a given raw sheet has applications in a number industries. It is a common problem often faced by designers in the shipbuilding, garment making, blanking die design, glass and wood industries. This paper presents a multi-stage layout approach for nesting two-dimensional patterns by using artificial intelligence techniques with a relatively short computation time. The raw material with irregular boundaries and internal defects which must be considered in various cases of nesting was also investigated in this study. The proposed nesting approach consists of two stages : initial layout stage and layout improvement stage. The initial layout configuration is achieved by the self-organizing assisted layout(SOAL) algorithm while in the layout improvement stage, the simulated annealing(SA) is adopted for a finer optimization.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.12
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• pp.3063-3072
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• 1993

The layout is an important and difficult problem in industrial applications like sheet metal manufacturing, garment making, circuit layout, plant layout, and land development. The module layout problem is known to be non-deterministic polynomial time complete(NP-complete). To efficiently find an optimal layout from a large number of candidate layout configuration a heuristic algorithm could be used. In recent years, a number of researchers have investigated the combinatorial optimization problems by using neural network principles such as traveling salesman problem, placement and routing in circuit design. This paper describes the application of Self-organizing Feature Maps(SOM) of the Kohonen network and Simulated Annealing Algorithm(SAA) to the layout problem of the two-dimensional rectangular shapes.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.279-283
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• 2015

Ni (100 nm thick) was deposited onto synthesized diamonds to fabricate etched diamonds. Next, those diamonds were annealed at varying temperatures ($400{\sim}1200^{\circ}C$) for 30 minutes and then immersed in 30 wt% $HNO_3$ to remove the Ni layers. The etched properties of the diamonds were examined with FE-SEM, micro-Raman, and VSM. The FE-SEM results showed that the Ni agglomerated at a low annealing temperature (${\sim}400^{\circ}C$), and self-aligned hemisphere dots formed at an annealing temperature of $800^{\circ}C$. Those dots became smaller with a bimodal distribution as the annealing temperature increased. After stripping the Ni layers, etch pits and trigons formed with annealing temperatures above $400^{\circ}C$ on the surface of the diamonds. However, surface graphite layers existed above $1000^{\circ}C$. The B-H loop results showed that the coercivity of the samples increased to 320 Oe (from 37 Oe) when the annealing temperature increased to $600^{\circ}C$ and then, decreased to 150 Oe with elevated annealing temperatures. This result indicates that the coercivity was affected by magnetic domain pinning at temperatures below $600^{\circ}C$ and single domain behavior at elevated temperatures above $800^{\circ}C$ consistent with the microstructure results. Thus, the results of this study show that the surface of diamonds can be etched.

• Journal of IKEEE
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• v.20 no.2
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• pp.177-180
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• 2016

The effect of varying thickness of Ag/Ti metal bilayer and annealing time have investigated for controlling self-organized nanoparticles (NPs) on 4H-SiC substrate. In addition, Glass and Si substrate which have different surface energy from SiC were fabricated for analyzing interaction of agglomeration. The results of FE-SEM indicated the different formation behaviors of NPs in various ranges of fabrication condition. The surface energy was measured by using a Contact Angle Analyzer. The formation of network-like NPs was observed on Glass and 4H-SiC, respectively, whereas it was not the case on Si substrates. It has been found that the size of NPs increases with decreasing surface energy, due to particle size-dependent hydrophilic properties of substrates. The different formation behavior was explained by using Young's equation for the contact angles between the metal and different substrates.

• Applied Chemistry for Engineering
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• v.23 no.3
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• pp.289-292
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• 2012

Au electrodes modified with self-assembled monolayers (SAMs) were used to control the work function of source/drain electrodes in triethylsilylethynyl anthradithiophene (TES ADT)-based organic thin film transistors (OTFTs). By using benzothiol (BT) and pentafluorobenzothiol (PFBT) SAMs, the hole injection barrier between Au and the highest occupied molecular orbital (HOMO) of TES ADT was controlled. After a solvent annealing, TES ADT OTFTs with PFBT SAM-treated Au electrodes were found to exhibit high field-effect mobilities of $0.05\;cm^2/Vs$ and on/off current ratios of $10^6$.

• Journal of the Korean Chemical Society
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• v.64 no.6
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• pp.345-349
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• 2020

In the self-assembled monolayer (SAM) of alkanethiol formed on a gold surface, some molecules fail to chemisorb with their terminal alkyl groups physisorbed. The previous molecular dynamics (MD) simulation showed that these defects can be cured by thermal annealing. Herein, we present a simple Ising model of alkanethiol. The Monte Carlo simulation based on the present model reproduced the essential features of the annealing of SAM observed in the MD simulation.