• Title/Summary/Keyword: Selectivity of frequency

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Direct Conversion receiver adapting DC offset free diode mixer (직접 변환수신기 (direct conversion receiver)에 적합한 DC offset이 없는 주파수 변환기를 채용한 직접변환 수신기의 설계)

  • 박필재;유현규;조한진
    • Proceedings of the IEEK Conference
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    • 2000.11a
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    • pp.361-364
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    • 2000
  • One of the problems using DCR(Direct Conversion Receiver) are DC offset, poor channel selectivity. APDP(Anti Parallel Diode Pair) can be good candidate for DCR frequency mixer due to its inherent End harmonic suppression. APDP shows good IP2 and DC suppression. This paper describe single APDP LO power characteristics, IP2, and receiver structure utilizing APDP frequency mixer

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Synthesis of Active Filters Using Operational Amplitiers of Finite GB Product (GB 적을 고려한 능동려파회로구성에 관한 연구)

  • Lee, Tae-Won;Jo, Yong-Hyeon;Ryu, Je-Geun
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.17 no.4
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    • pp.45-52
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    • 1980
  • In order to eliminate the phase errors caused by the finite GB product of operational amplifiers, novel integnator circuits are proposed. These circuits are characterized by their positive phase error angles and integrator selectivity. The positive sign of the Q and of the circuits compensates the negative selectivity and phase error angles, inherent in the integrated operational amplifiers. Miller inverting intergrator of a biquad circuit realized by Thomas is replaced by the proposed circuit and the band-pass frequency response of the modified biquad network is experimentally analyzed. A considerable improvement is recognized to such extent that the center frequency of the band-pass filter is allowed to be shifted up to 20KHz, which has been infeasible with conventional biquad networks.

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A study on the RF receiving system design and on the performance improvement for PCS mobile station (개인휴대통신을 위한 이동국 RF 수신시스템의 설계 및 성능개선에 관한 연구)

  • 오정일;천종훈
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.11
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    • pp.66-75
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    • 1997
  • We derive the system design parameters to implement the receiving system for the PCS mobile station to satisfy the J-sTD-018 which is the PCS mobile station(MS) minimum performance. Also we analyze the system performance and intermodulation spurious due to the values of a device cause the system performance degradation, is proposed. The simulation shows the receiver's maximum system noise figure to satisfy the receiver selectivity is approximately 11 dB. While the MS noise figure is 10dB with system margin 1 dB, the minimum selectivity is -71 dB at 1.25MHz frequency offset from the carrier frequency. And the input 3rd order intercept point of the MS class I and the MS class II~V is -9.5 dBm and -14dBm respectively. When the interference power level at the receiver is small, the receiver has better performance as we increase the gain of the LNA. However, when the interference level at the receiver is large, the receiver performance is heavily affected by the spurious as we increase the gain of the LNA. Thus, we proved the effectiveness of the LNA On/Off switching technique as to reduce the effect of the spurious.

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Etch Characteristics of $SiO_2$ by using Pulse-Time Modulation in the Dual-Frequency Capacitive Coupled Plasma

  • Jeon, Min-Hwan;Gang, Se-Gu;Park, Jong-Yun;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.472-472
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    • 2011
  • The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

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Frequency divided group beamforming with sparse space-frequency code for above 6 GHz URLLC systems

  • Chanho Yoon;Woncheol Cho;Kapseok Chang;Young-Jo Ko
    • ETRI Journal
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    • v.44 no.6
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    • pp.925-935
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    • 2022
  • In this study, we propose a limited feedback-based frequency divided group beamforming with sparse space-frequency transmit diversity coded orthogonal frequency division multiplexing (OFDM) system for ultrareliable low latency communication (URLLC) scenario. The proposed scheme has several advantages over the traditional hybrid beamforming approach, including not requiring downlink channel state information for baseband precoding, supporting distributed multipoint transmission structures for diversity, and reducing beam sweeping latency with little uplink overhead. These are all positive aspects of physical layer characteristics intended for URLLC. It is suggested in the system to manage the multipoint transmission structure realized by distributed panels using a power allocation method based on cooperative game theory. Link-level simulations demonstrate that the proposed scheme offers reliability by achieving both higher diversity order and array gain in a nonline-of-sight channel of selectivity and limited spatial scattering.

Surface Acoustic Wave Gas Sensor (탄성표면파 가스센서)

  • Yoo, Beom-Keun;Park, Yong-Wook;Kang, Chong-Yun;Kim, Jin-Sang;Choi, Doo-Jin;Yoon, Seok-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.251-252
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    • 2006
  • A development of surface acoustic wave gas sensor to detecting volatile gas has been observed by monitoring output signal as function of time onto the network analyzer. The SAW sensor with a center frequency of 200MHz was fabricated on $42^{\circ}$ S-T Quartz substrates. Using the gas chromatography column has been selectivity. Experimental results, which show the phase change of output signal under the absorption of volatile gas onto sensors, were presented. The proposed sensor has the properties of high sensitivity compare to the conventional SAW gas sensor and chemical selectivity. Thus, it is thought these results are applicable for use in sensor array of an high performance electronic nose system.

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Experimental Verification of Mode-selectivity and Effects of Parameters on Outputs in a Noncontact Vibration Exciter for a Shaft (비접촉 축 진동 가진기의 모드 선택성 및 설계인자가 출력에 미치는 영향에 대한 실험적 검증)

  • Lee, Ho-Cheol
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.21 no.10
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    • pp.924-933
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    • 2011
  • The possibility of noncontact excitation of vibrations in a shaft was investigated in order to enable online structural health monitoring of a shaft during its rotating condition without stop operation. The proposed noncontact exciter was devised to exclusively generate one of two shaft vibration modes, so called longitudinal and flexural. Using the prototypes and a lot of experiments on them, it was proven that bias magnetic field, exciting voltage, center frequency, and geometry of yokes have crucial impacts on its output characteristics.

Via Contact and Deep Contact Hole Etch Process Using MICP Etching System (Multi-pole Inductively Coupled Plasma(MICP)를 이용한 Via Contact 및 Deep Contact Etch 특성 연구)

  • 설여송;김종천
    • Journal of the Semiconductor & Display Technology
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    • v.2 no.3
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    • pp.7-11
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    • 2003
  • In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.

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