• Title/Summary/Keyword: Selective doping

Search Result 61, Processing Time 0.032 seconds

Low-Temperature Solution Process of Al-Doped ZnO Nanoflakes for Flexible Perovskite Solar Cells

  • Nam, SeongSik;Vu, Trung Kien;Le, Duc Thang;Oh, Ilwhan
    • Journal of Electrochemical Science and Technology
    • /
    • v.9 no.2
    • /
    • pp.118-125
    • /
    • 2018
  • Herein we report on the selective synthesis and direct growth of nanostructures using an aqueous chemical growth route. Specifically, Al-doped ZnO (AZO) nanoflakes (NFs) are vertically grown on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) sheets at low temperature and ambient environment. The morphological, optical, and electrical properties of the NFs are investigated as a function of the Al content. Furthermore, these AZO-NFs are integrated into perovskite solar devices as the electron transport layer (ETL) and the fabricated devices are tested for photovoltaic performance. It was determined that the doping of AZO-NFs significantly increases the performance metrics of the solar cells, mainly by increasing the short-circuit current of the devices. The observed enhancement is primarily attributed to the improved conductivity of the doped AZO-NF, which facilitates charge separation and reduces recombination. Further, our flexible solar cells fabricated through this low temperature process demonstrate an acceptable reproducibility and stability when exposed to a mechanical bending test.

Recent Developments in Metal Oxide Gas Sensors for Breath Analysis (산화물 반도체를 이용한 최신 호기센서 기술 동향)

  • Yoon, Ji-Wook;Lee, Jong-Heun
    • Ceramist
    • /
    • v.22 no.1
    • /
    • pp.70-81
    • /
    • 2019
  • Breath analysis is rapidly evolving as a non-invasive disease recognition and diagnosis method. Metal oxide gas sensors are one of the most ideal platforms for realizing portable, hand-held breath analysis devices in the near future. This paper reviewed the recent developments in metal oxide gas sensors detecting exhaled biomarker gases such as nitric oxides, acetone, ammonia, hydrogen sulfide, and hydrocarbons. Emphasis was placed on strategies to tailor sensing materials/films capable of highly selective and sensitive detection of biomarker gases with negligible cross-response to ethanol, the major interfering breath gas. Specific examples were given to highlight the validity of the strategies, which include optimization of sensing temperature, doping additives, utilizing acid-base interaction, loading catalysts, and controlling gas reforming reaction. In addition, we briefly discussed the design and optimization method of gas sensor arrays for implementing the simultaneous assessment of multiple diseases. Breath analysis using high-performance metal oxide gas sensors/arrays will open new roads for point-of-care diagnosis of diseases such as asthma, diabetes, kidney dysfunction, halitosis, and lung cancer.

Hydrogen Permeance of Ce1-xYxO2-δ Membranes According to Yttrium Content

  • Song, Da-Heoi;Jung, Mie-Won
    • Journal of the Korean Ceramic Society
    • /
    • v.50 no.6
    • /
    • pp.451-453
    • /
    • 2013
  • Porous ceramic membranes consisting of $Ce_{1-x}Y_xO_{2-{\delta}}$ were developed for hydrogen permeation tests. Various amounts (x = 0, 0.05, 0.1, 0.2) of yttrium were doped to ceria to study the effect of yttrium doping on ceria membranes on various properties, including hydrogen permeability. $Ce_{1-x}Y_xO_{2-{\delta}}$ powder was synthesized by the sol-gel method. These membranes were fabricated by pressing and sintering at $1300^{\circ}C$ for 6 h. As the amount of yttrium increased, the grain size of the membrane decreased. Hydrogen permeability was improved as the yttrium content increased. Selective permeability of hydrogen compared to CO is explained by electric conductivity. As the temperature rose, both the hydrogen perm-selectivity and electric conductivity on $Ce_{0.8}Y_{0.2}O_{1.9}$ improved.

Gas Sensing Characteristics of WO3-Doped SnO2 Thin Films Prepared by Solution Deposition Method (용액적하법으로 제조된 WO3 첨가 SnO2 박막의 가스감응 특성)

  • Choi, Joong-Ki;Cho, Pyeong-Seok;Lee, Jong-Heun
    • Korean Journal of Materials Research
    • /
    • v.18 no.4
    • /
    • pp.193-198
    • /
    • 2008
  • $WO_3$-doped $SnO_2$ thin films were prepared in a solution-deposition method and their gas-sensing characteristics were investigated. The doping of $WO_3$ to $SnO_2$ increased the response ($R_a/R_g,\;R_a$: resistance in air, $R_g$: resistance in gas) to $H_2$ substantially. Moreover, the $R_a/R_g$ value of 10 ppm CO increased to 5.65, whereas that of $NO_2$ did not change by a significant amount. The enhanced response to $H_2$ and the selective detection of CO in the presence of $NO_2$ were explained in relation to the change in the surface reaction by the addition of $WO_3$. The $WO_3$-doped $SnO_2$ sensor can be used with the application of a $H_2$ sensor for vehicles that utilize fuel cells and as an air quality sensor to detect CO-containing exhaust gases emitted from gasoline engines.

Fast Responding Gas Sensors Using Sb-Doped SnO2 Nanowire Networks (Sb-첨가 SnO2 나노선 네트워크를 이용한 고속응답 가스센서)

  • Kwak, Chang-Hoon;Woo, Hyung-Sik;Lee, Jong-Heun
    • Journal of Sensor Science and Technology
    • /
    • v.22 no.4
    • /
    • pp.302-307
    • /
    • 2013
  • The Sb-doped $SnO_2$ nanowire network sensors were prepared by thermal evaporation of the mixtures between tin and antimony powders. Pure $SnO_2$ nanowire networks showed high sensor resistance in air ($99M{\Omega}$), similar gas responses to 4 diffferent gases (5 ppm $C_2H_5OH$, CO, $H_2$, and trimethylamine), and very sluggish recovery speed (90% recovery time > 800 s). In contrast, 2 wt% Sb-doped $SnO_2$ showed the selective detection toward $C_2H_5OH$ and trimethylamine, relatively low resistance ($176k{\Omega}$) for facile measurement, and ultrafast recovery speed (90% recovery times: 6 - 18 s). The change of gas sensing charactersitics by Sb doping was discussed in relation to gas sensing mechanism.

The Effect of Promoter on the SO2-resistance of Fe/zeolite Catalysts for Selective Catalytic Reduction of NO with Ammonia (NO의 암모니아 선택적 촉매환원반응을 위한 철 제올라이트 촉매의 내황성에 미치는 조촉매 효과)

  • Ha, Ho-Jung;Choi, Joon-Hwan;Han, Jong-Dae
    • Clean Technology
    • /
    • v.21 no.3
    • /
    • pp.153-163
    • /
    • 2015
  • The effects of H2O and residue SO2 in flue gases on the activity of the Fe/zeolite catalysts for low-temperature NH3-SCR of NO were investigated. And the addition effect of Mn, Zr and Ce to Fe/zeolite for low-temperature NH3-SCR of NO in the presence of H2O and SO2 was investigated. Fe/zeolite catalysts were prepared by liquid ion exchange and promoted Fe/zeolite catatysts were prepared by liquid ion exchange and doping of Mn, Zr and Ce by incipient wetness impregnation. Zeolite NH4-BEA and NH4-ZSM-5 were used to adapt the SCR technology for mobile diesel engines. The catalysts were characterized by BET, X-ray diffraction (XRD), SEM/EDS, TEM/EDS. The NO conversion at 200 ℃ over Fe/BEA decreased from 77% to 47% owing to the presence of 5% H2O and 100 ppm SO2 in the flue gas. The Mn promoted MnFe/BEA catalyst exhibited NO conversion higher than 53% at 200 ℃ and superior to that of Fe/BEA in the presence of H2O and SO2. The addition of Mn increased the Fe dispersion and prevented Fe aggregation. The promoting effect of Mn was higher than Zr and Ce. Fe/BEA catalyst exhibited good activity in comparison with Fe/ZSM-5 catalyst at low temperature below 250 ℃.

Flexible CdS Films for Selective control of Transmission of Electromagnetic Wave (유연성 기판위에 스퍼터링법으로 제조한 CdS 박막의 전자파차폐 특성평가)

  • Hur, Sung-Gi;Cho, Hyun-Jin;Jung, Hyun-Jun;Ahn, Jun-Ku;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.27-27
    • /
    • 2009
  • Non-stochiometric CdS:H films grown on polyethersulfon (PES) flexible polymer substrates at room temperature by R.F. sputtering technique. They exhibited a dark- and photo-sheet resistance of $2.7\times10^5$ and $\sim\;50\;{\Omega}$/square, respectively. These values were realized by an optimum control of both hydrogen doping-levels and the surface morphologies of the films. The comparison between the real and the simulated results for the shielding and the transmission by the free space measurement system in the X-band frequency range (8.2 - 12.4 GHz) was also addressed in this study. Samples overlapped with 13 layers of CdS:H/PES were consistent with the transmission results of pure aluminum metal films ($0.1\;{\Omega}$/square) deposited on PES substrates. As a result, by the simples tacking of the CdS:H/PES layers, the perfect control of the shielding and the transmission of the EM wave in the range of X-band frequency is possible by avisible light alone, and their results are especially very outstanding findings in the stealth function of the radome(Radar+Dome) such as aircrafts, ships, and missiles.

  • PDF

Photoreduction of Carbon Dioxide using Graphene Oxide-Titanium Oxide Composite (그래핀 옥사이드와 이산화티타늄 조합을 이용한 이산화탄소의 광환원)

  • Lee, Myung-Kyu;Jang, Jun-Won;Park, Sung-Jik;Park, Jae-Woo
    • Journal of Korean Society on Water Environment
    • /
    • v.32 no.1
    • /
    • pp.46-51
    • /
    • 2016
  • In this study, we synthesized a combination of graphene oxide (GO) and titanium dioxide (TiO2) and confirm that GO can be used for CO2 photoreduction. TiO2 exhibited highly efficient combination with other conventional electric charges generated by these paration phenomenon for suppression of hole-electron recombination. This improved the efficiency of CO2 photoreduction. The synthetic form of GO-TiO2 used in this study was agraphene sheet surrounded by TiO2 powder. Efficiency and stability were enhanced by combination of GO and TiO2. In a CO2 photoreduction experiment, the highest CO conversion rate was 0.652 μmol/g·h in GO10-TiO2 (2.3-fold that of pure TiO2) and the highest CH4 production rate was 0.037 μmol/g·h in GO0.1-TiO2 (2.4-fold that of pure TiO2). GO enhances photocatalytic efficiency by functioning as a support and absorbent, and enabling charge separation. With increasing GO concentration, the CH4 level decreases to~45% due to decreased transfer of electrons. In this study, TiO2 together with GO yielded a different result than the normal doping effect and selective CO2 photoreduction.

Analysis and assessment of the gain of optically pumped surface-normal optical amplifiers (광여기 면형 광증폭기의 이득해석 및 제작)

  • 김운하;정기태;조용환
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.25 no.1B
    • /
    • pp.8-14
    • /
    • 2000
  • This paper analyzes and accesses the gain of optically pumped surface-normal MQW optical amplifiers. The proposed amplifiers have the advantage of polarization independence, high coupling efficiency to and from optical fibers, and flexibility of operating wavelength. We analyzed the gain characteristics of 100 - 200-period MQWs and verified the dependence of a strained lattice and selective doping. Theoretical analysis of such MQWs showsa single-pass gain of 3 dB with broad operation bandwidth. A single-pass gain of 2.6 dB is obtained experimentally in an InGaAs/InGaAlAs MQW amplifier, which is compared with calculations. The use of Fabry-Perot interferometer (FPI) structure in an optical amplifier is a useful way to increase the gain, but causes a problem of narrow operation bandwidth when the single-pass gain is low. Therefore, a single-pass gain above 2to 3 dB is a prerequisite to achieve both a high gain and moderate operation bandwidth in FPI-structured opticalamplifiers. We have designed an FPI-structured surface-normal optical amplifier both with a high gain of broad operation bandwidth of 4.6mm, when a single-pass gain is 3 dB.

  • PDF

Implant Anneal Process for Activating Ion Implanted Regions in SiC Epitaxial Layers

  • Saddow, S.E.;Kumer, V.;Isaacs-Smith, T.;Williams, J.;Hsieh, A.J.;Graves, M.;Wolan, J.T.
    • Transactions on Electrical and Electronic Materials
    • /
    • v.1 no.4
    • /
    • pp.1-6
    • /
    • 2000
  • The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).

  • PDF