• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.157-161
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• 2006

InGaN layers on GaN templated sapphire (0001) substrates were grown by mixed-source hydride vapor phase epitaxy (HVPE) method. In order to get InGaN layers, Ga-mixed In metal and $NH_3$ gas were used as group III and group V source materials, respectively. The InGaN material was compounded from chemical reaction between $NH_3$ and indium-gallium chloride farmed by HCl flowed over metallic In mixed with Ga. The grown layers were confirmed to be InGaN ternary crystal alloys by X-ray photoelectron spectroscopy (XPS). In concentration of the InGaN layers grown by selective area growth (SAG) method was investigated by the photoluminescence (PL) and cathodoluminescence (CL) measurements. Indium concentration was estimated to be in the range 3 %. Moreover, as a new attempt in obtaining InAlGaN layers, the growth of the thick InAlGaN layers was performed by putting small amount of Ga and Al into the In source. We found the new results that the metallic In mixed with Ga (and Al) as a group III source material could be used in the growth process of the In(Al)GaN layers by the mixed-source HVPE method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.216-221
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• 2006

An investigation of the influence of $WO_3$ and $V_2O_5$ catalysts on the microstructure, phase formation and selective catalytic reduction (SCR) efficiency of the synthesized SCR powders has been carried out. A commercial anatase-$TiO_2$ was used as the catalysts support. For $WO_3(10wt%)/TiO_2$, the W loading to the $TiO_2$ support led to the lower in anatase to rutile transition temperature from $1200^{\circ}C$ of $TiO_2$ support to ${\sim}900^{\circ}C$. The transition temperature was also lowered to below $650^{\circ}C$ in the $V_2O_5$(5 and 10 wt%) added composition. The $WO_3(10wt%)/TiO_2$ SCR powder obtained at $450^{\circ}C$ showed near 100% of $NO_x$ conversion efficiency at $350{\sim}400^{\circ}C$ and for the powder prepared at $650^{\circ}C$ the same efficiency was achieved in wider temperature range $300{\sim}400^{\circ}C$. The highest $NO_x$ conversion efficiency of 100% was obtained in the $V_2O_5(5wt%)/TiO_2$ SCR composition calcined at $650^{\circ}C$ in the relatively wider temperature range $250{\sim}350^{\circ}C$, while the catalytic efficiency considerably decreased for the $V_2O_5(10wt%)/TiO_2$. The lowered conversion efficiency of $NO_x$ observed in the $V_2O_5(10wt%)/TiO_2$ composition calcined at $650^{\circ}C$ was considered to be correlated with the lowered surface area resulting from the increased crystallite growth by highly reactive vanadium loading.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.50 no.3
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• pp.161-169
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• 2005

With various Korean domestic soybeans, growth and yields analysis were conducted to select the suitable soybean cultivars for cultivation in paddy field. Distinctive aspects of the soybean growth were observed in paddy field such as retarded growth of top plants and roots, relatively higher T/R ratio followed by overgrowth of top plant. However, growth and yields were significantly different among the cultivars showing 134kg/10a in Paldokong and 385 kg/10a in Doremikong. At V5. and R2 stage, highly positive correlations $(r=0.76^{**}\~0.91^{**})$ were observed between leaf area and dry weight of top plant and/or root. T/R ratio was negatively correlated with dry weight of root $(r=-0.37^*)$ at V5 stage, while significantly correlated with leaf area $(r=-0.37^{**})$ and dry weight of top plant $(r=0.65^{**})$at R2 stage. Among the characters, only 100-seed weight was significantly correlated with yield. Considering the growth characters, 37 cultivars could be included in 3 different groups and genotypic properties such as maturity and growth habit were similar in each group. Nine cultivars in group 1 showed retarded growth from V5 to R2 stage, relatively lower T/R ratio, and good seed ripening. Average yields of the cultivers was 257kg/10a. In group 2, 12 cultivars showed higher T/R ratio due to overgrowth of top plant and lowest average yields (230 kg/l0a) due to poor seed ripening. Sixteen cultivars in group 3 grew fast from V5 to R2 stage representing late maturity traits, low T/R ratio, and good seed ripening. Average yields of the cultivars was highest among groups showing 270kg/l0a. In results, stable self-sufficiency of soybean yields could be expected by selective cultivation with high yielding cultivars ranging from 301 to 385kg/10a, such as Shinpaldalkong 2, Sohokong, Doremikong, Keumkangkong, Bukangkong, Dajangkong, and Geomjeongkong 2, or with cultivars included in group 3.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.6-10
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• 2007

The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

• Parasites, Hosts and Diseases
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• v.47 no.4
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• pp.323-335
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• 2009

A successful experience of lymphatic filariasis control in the Republic of Korea is briefly reviewed. Filariasis in the Republic of Korea was exclusively caused by infection with Brugia malayi. Over the past several decades from the 1950s to 2006, many investigators exerted their efforts to detection, treatment, and follow-up of filariasis patients in endemic areas, and to control filariasis. Mass, combined with selective, treatments with diethylcarbamazine to microfilaria positive persons had been made them free from microfilaremia and contributed to significant decrease of the microfilarial density in previously endemic areas. Significant decrease of microfilaria positive cases in an area influenced eventually to the endemicity of filariasis in the relevant locality. Together with remarkable economic growth followed by improvement of environmental and personal hygiene and living standards, the factors stated above have contributed to blocking the transmission cycle of B. malayi and led to disappearance of this mosquito-borne ancient disease in the Republic of Korea.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.320-324
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• 2013

The effects of $CeO_2$ on catalytic activity of $CeO_2-TiO_2$ for the selective catalytic reduction (SCR) of $NO_x$ were investigated in terms of structural, morphological, and physico-chemical analyseis. $CeO_2-TiO_2$ catalysts were synthesized with three different additions, 10, 20, and 30 wt% of $CeO_2$, by the sol-gel method. The XRD peaks of all specimens were assigned to a $TiO_2$ phase (anatase) and the peaks became broader with the addition of $CeO_2$ because it was dispersed as an amorphous phase on the surface of $TiO_2$ particles. The specific surface area of $TiO_2$ increased with the addition of $CeO_2$ from $60.6306m^2/g$ to $116.2791m^2/g$ due to suppression of $TiO_2$ grain growth by $CeO_2$. The 30 wt% $CeO_2-TiO_2$ catalyst, having the strongest catalytic acid sites ($Br{\Phi}nsted$ and Lewis), showed the highest $NO_x$ conversion efficiency of 98 % at $300^{\circ}C$ among the specimens. It was considered that $CeO_2$ contributes to the improvement of the $NO_x$ conversion of $CeO_2-TiO_2$ catalyst by increasing specific surface area and catalytic acid sites.

• Korean Journal of Microbiology
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• v.31 no.2
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• pp.105-112
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• 1993

Plesiomonas shigelloides distributed in the aquatic systems was isolated and identified in this study and compared with the c1inica] isolates in view of their physiological characteristics, Biochemica] charactristics of the isolates of P. shigelloides one sample taken from Gupo and two samples taken from Mu]gum, were studied. However, none was isolated in Haeundae, Dadaepo, Kangdong and Nakdong estuary. The isolated bacteria had an optimum growth condition in peptone water of $25~35^{\circ}C$, pH 7.5-8.0 and 1% NaCI concentration. The cell grew most properly on the selective enrichment media which were made from adding inositol to peptone water. DNase was s]owly produced and the results were different from those of other studies. The components of the fatty acid were 3% of 3-hydroxy]ated fatty acid containing $C_{12}~C_{18}$. 0-10% cyclopropane ($C_{17:0}$), 25~30% hexadecanoic acid ($C_{16:0}$), 32~43% hexadecenoic acid ($C_{16:1}$), 1~2% octadecanoic acid ($C_{16:0}$), and 9~14% octadecenoic acid ($C_{18:1}$). Bacterio]ogica] characteristics, susceptibility of antibiotics, and the components of fatty acid of the c1inica] isolates were similar to those of the strains isolated from the aquatic systems. The strains isolated from c1inica] sources degraded lactose more fast than those isolated from the aquatic systems. There existed resistant bacteria to chlorampenicol in the strains from patients, but there were no resistant bacteria in the strains from the aquatic systems. The components of fatty acid of the clinical isolates were 0~2% $C_{17:0 cyclo}$ and 2~3% $C_{18:0}$, but those of the strains from the aquatic systems were 2~10% and 1~2%, respectvely, which showed the quantitative difference between both components.

• Tuberculosis and Respiratory Diseases
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• v.61 no.2
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• pp.150-156
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• 2006

Background: Gefitinib (ZD 1839, Iressa) is a new anticancer agent; more specifically, it is a selective epidermal growth factor receptor tyrosine kinase inhibitor that is, widely used for various solid cancers, including lung cancer. Cutaneous adverse reactions induced by gefitinib have recently been reported; however, not much on this topic has been reported in the Korean literature. Method: We studied cutaneous adverse reactions of gefitinib in 23 patients who suffered with non-small cell lung cancer at Chonnam National University Hwasun Hospital from October 2004 to September 2005. Result: The patients ranged from 23-72 years old, and there were 17 patients with adenocarcinoma, 5 with squamous cell carcinoma and 1 with bronchioloalveolar carcinoma. The most common adverse reaction was acneiform eruptions in 15 patients (65.2%). This reaction appeared within 2 months after medication, and it didn't correlate with the therapeutic response and tumor type. Pruritus was the second most common reaction (39.1%), which was mild and generalized, especially around eyelid area. Xerosis (26.1%), exfoliation on palm and sole (21.7%), and paronychia (21.7%) followed. Hair breakage and intertrigo were rare adverse reactions. Conclusion: Various cutaneous adverse reactions were observed in patients with non-small cell lung carcinoma after gefitinib treatment. The skin complications could be alleviated with dermatologic consultations and treatments, skin complications could be alleviated.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.168-173
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• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.244-245
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• 2010

최근 광전자 분야에서는 미래 에너지 자원에 대한 관심과 함께 GaN 기반 발광다이오드 및 태양전지 연구가 활발히 진행되고 있다. GaN는 높은 전자 이동도와 높은 포화 속도 등의 광전자 소자에 유리한 특성을 가지고 있으나, 고 인듐 함유량과 막질의 우수한 특성을 동시에 구현하는 것은 매우 어렵다. 이를 극복하기 위한 방법으로써 선택 영역 박막 성장법(Selective Area Growth)은 마스크 패터닝을 통해 제한된 영역에서만 박막을 성장하는 방법으로써 GaN의 막질을 향상 시킬 수 있는 방법으로 주목받고 있다. 본 논문에서는 대면적 기판에서 GaN의 막질 향상뿐만 아니라 고인듐 InGaN 박막 성장을 위하여 서브마이크로미터 주기와 크기를 갖는 홀 패턴을 포토리소그라피 공정 최적화를 통해 구현할 수 있는 방법에 대해 논의한다. 그림. 1은 사파이어 기판 위에 선택 영역 박막 성장법을 이용하여 성장한 n-GaN/활성층/p-GaN의 구조를 나타낸 그림이다. 이를 통하여 서브마이크로미터 스케일의 반극성 InGaN면 위에 높은 인듐 함유량을 가지면서도 우수한 특성을 갖는 박막을 얻을 수 있다. 본 실험을 위하여 사파이어 기판 위에 SiO2를 증착한 후 포토레지스트(AZ5206)을 도포하고 포토리소그라피 공정을 진행하여 2um 크기 및 간격을 갖는 패턴을 형성했다. 그림. 2는 AZ5206에 UV를 조사(5초)하고 현상(23초)한 패턴을 윗면(그림. 2(a))과 $45^{\circ}$ 기울인 면(그림. 2(b)) 에서 본 SEM(Scanning Electron Microscope) 사진이다. 이를 통해 약 2.2um의 홀 패턴이 선명하게 형성 됨을 볼 수 있다. 그 후 수백나노 직경의 홀을 만들기 위해서 리플로우 공정을 수행한다. 그림. 3은 리플로우 온도에 따른 패턴의 홀 모양을 AFM(Atomic Force Microscope)을 이용하여 측정한 표면의 사진이다. 이를 통해 2차원 평면에서 리플로우 온도 및 시간에 따른 변화를 볼 수 있다. 그림.3의 (a)는 리플로우 공정을 진행하기 전 패턴이고, (b)는 $150^{\circ}C$에서 2분, (c)는 $160^{\circ}C$에서 2분 (d)는 $170^{\circ}C$에서 2분 동안 리플로우 공정을 진행한 패턴이다. $150^{\circ}C$와 $160^{\circ}C$에서는 직경에 큰 변화가 없었고, $160^{\circ}C$에서는 시료별 현상 시간 오차에 따라 홀의 크기가 커지는 경향이 나타났다. 그러나 $170^{\circ}C$에서 2분간 리플로우 한 시료 (그림. 3(d))의 경우는 홀의 직경이 ~970nm 정도로 줄어든 것을 볼 수 있다. 홀의 크기를 보다 명확히 표현하기 위해 그림.3에 대응시켜 단면을 스캔한 그래프가 그림.4에 나타나 있다. 그림.4의 (a) 및 (b)의 경우 포토레지스트의 높이 및 간격이 일정하므로, 리플로우에 의한 영향은 거의 없었다. 그림. 4(c)의 경우 포토레지스트의 높이가 그림.4(a)에 비해 ~25nm 정도 낮은 것으로 볼 때, 과도 현상 및 약간의 리플로우가 나타났을 가능성이 크다. 그림. 4(d)에서는 ~970nm의 홀 크기가 나타나서 본 연구에서 목표로 하는 나노 홀 크기에 가장 가까워짐을 확인할 수 있었다. 따라서, $170^{\circ}C$ 이상의 온도와 2분 이상의 리플로우 시간 조건에서 선택 영역 성장을 위한 나노 홀 마스크의 크기를 제어할 수 있음을 확인하였다.