Effects of Doping Concentration in Polysilicon Floating Gate on Programming Threshold Voltage of EEPROM Cell (EEPROM 셀에서 폴리실리콘 플로팅 게이트의 도핑 농도가 프로그래밍 문턱전압에 미치는 영향)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.20 no.2
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- pp.113-117
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- 2007