• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.142-143
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• 2007

현재 양산용 태앙전지 제조에 가장 널리 쓰이는 전극형성 기술인 Screen printing 기법은 진공 증착법과 무전해 도금에 의한 방법과, 비교할 때 공정장비가 간단하고 자동화에 적합하여 70 년대 이후로 널리 사용되어 왔다. 본 실험에서는 Screen printing기법과 Porous Si을 이용한 양산형 실리콘 태양전지를 제작하여 그 특성을 평가하였으며 13.2%의 변환효율을 나타내었다.

• Journal of Magnetics
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• v.18 no.3
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• pp.225-229
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• 2013

We report a measurement for the anomalous Nernst effects induced by a temperature gradient in [CoSiB/Pt] multilayer films with perpendicular magnetic anisotropy. The Nernst voltage shows a characteristic hysteresis which reflects the magnetization of the film as in the case of the anomalous Hall effects. With a local heating geometry, we also measure the dependence of the anomalous Nernst voltage on the distance d from the heating element. It is roughly proportional to $1/d^{1.3}$, which can be conjectured from the expected temperature gradient along the sample from the heat equation.

• Current Optics and Photonics
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• v.5 no.6
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• pp.730-737
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• 2021

Transmission spectra are measured from waveguide-coupled ring resonators fabricated with SiN_x on SiO₂. By using ring resonators with various radii and several index contrasts, the behavior of the quality factors is investigated. As the index contrast decreases, the dominant loss is from scattering for a large resonator, while that changes from scattering loss to bending loss for a small resonator. We verify that the quality factor can be drastically improved by reducing the index contrast in large ring resonators.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1116-1118
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• 2005

We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures ($<150^{\circ}C$). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as $70\;mJ/cm^2$, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.227-232
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• 2013

Al-based alloys have recently attracted considerable interest as structural materials and light weight materials due to their excellent physical and mechanical properties. For the investigation of the potential of Al-based alloys, a surface porous $Al_{88}Cu_6Si_6$ eutectic alloy has been fabricated through a chemical leaching process. The formation and microstructure of the surface porous $Al_{88}Cu_6Si_6$ eutectic alloy have been investigated using X-ray diffraction and scanning electron microscopy. The $Al_{88}Cu_6Si_6$ eutectic alloy is composed of an ${\alpha}$-Al dendrite phase and a single eutectic phase of $Al_2Cu$ and ${\alpha}$-Al. We intended to remove only the ${\alpha}$-Al phase and then the $Al_2Cu$ phase would form a porous structure on the surface with open pores. Both acidic and alkaline aqueous chemical solutions were used with various concentrations to modify the influence on the microstructure and the overall chemical reaction was carried out for 24 hr. A homogeneous open porous structure on the surface was revealed via selective chemical leaching with a $H_2SO_4$ solution. Only the ${\alpha}$-Al phase was successfully leached while the morphology of the $Al_2Cu$ phase was maintained. The pore size was in a range of $1{\sim}5{\mu}m$ and the dealloying depth was nearly $3{\mu}m$. However, under an alkaline NaOH, aqueous solution, an inhomogeneous porous structure on the surface was formed with a 5 wt% NaOH solution and the morphology of the $Al_2Cu$ phase was not preserved. In addition, the sample that was leached by using a 7 wt% NaOH solution crumbled. Al extracted from the Al2Cu phase as ${\alpha}$-Al phase was dealloyed, and increasing concentration of NaOH strongly influenced the morphology of the $Al_2Cu$ phase and sample statement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.206-207
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• 2009

PECVD를 이용하여 상온에서 Silicon nitride 박막을 제조하였다. 그리고 증착 중에 non-invasive ion energy analyzer를 이용하여 이온에너지와 이온에너지 flux룰 측정하였다. PECVD의 소스 파워는 500W, 바이어스 파워 100W으로 고정하고 주파수 250Hz으로 고정된 상태에서 펄스를 인가하여 duty ratio를 30-100%까지 변화시켰다. 작은 duty ratio 범위 (30-70%)에서 duty ratio가 감소할 때, 이온에너지와 이온에너지의 비가 감소하였다. 이 때 감소되는 굴절률은 저이온에너지 변수와 강한 연관성을 지니고 있었다. 굴절률은 1.65-2.46 사이에서 변화하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.221-222
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• 2009

SiN 박막을 Pulsed-PECVD를 이용하여 증착하였다. 박막특성으로는 굴절률, 플라즈마의 특성으로는 이온 에너지 분포를 duty ratio의 함수로 분석하였다. 50-100%의 범위에서 duty ratio의 감소에 따라 고 이온 에너지는 크게 증가하였으며, 반대로 저 이온 에너지는 감소되었다. 굴절률은 duty ratio의 감소에 따라 증가되었으며, 모든 duty ratio의 변화에서 1.75-1.81 사이에서 변화하였다. 40-90%의 duty ratio에서 저 이온 에너지 플럭스보다 고 이온 에너지 플럭스가 높았다. 한편, 굴절률의 변화는 $N_h$의 변화에 가장 밀접하게 연관되어 있음을 확인할 수 있었다.

• Biomolecules & Therapeutics
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• v.28 no.5
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• pp.405-413
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• 2020

Fibroblast-like synoviocytes (FLS) play a crucial role in initiating rheumatoid arthritis. B-cell activating factor (BAFF) plays a role in FLS survival as well as in B cell maturation and maintenance. Here, we investigated whether tumor necrosis factor (TNF)-α-induced BAFF expression controls FLS migration and whether BAFF expression in FLS could be regulated by KR33426 which is the inhibitor of BAFF binding to BAFF receptors (BAFF-R) by using MH7A synovial cells transfected with the SV40 T antigen. More TNF-α-treated cells migrated compared to the control. TNF-α increased BAFF expression in FLS, significantly. FLS migration was inhibited by the transfection with BAFF-siRNA. KR33426 also inhibited BAFF expression increased by TNF-α treatment in FLS as judged by western blotting, PCR, and transcriptional activity assay. Kinases including JNK, p38 and Erk were activated by TNF-α treatment. While JNK and p38 were inhibited by KR33426 treatment, no changes in Erk were observed. Transcription factors including p65, c-Fos, CREB and SP1 were enhanced by TNF-α treatment. Among them, c-Fos was inhibited by KR33426 treatment. Small interference(si)-RNA of c-fos decreased BAFF transcriptional activity. FLS migration induced by TNF-α was inhibited by the transfection with BAFF-siRNA. KR33426 increased Twist, Snail, Cadherin-11 and N-Cadherin. In contrast, KR33426 decreased E-cadherin and TNF-α-enhanced CCL2. Taken together, our results demonstrate that synovial cell migration via CCL2 expression could be regulated by BAFF expression which is decreased by KR33426 and c-Fos-siRNA. It suggests for the first time that the role of BAFF-siRNA on FLS migration might be matched in the effect of KR33426 on BAFF expression.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.367-370
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• 2009

It is important to reduce a reflection of light as a solar cell is device that directly converts the energy of solar radiation to electrical energy in oder to improve efficiency of solar cells. The antireflection coating has proven effective in providing substantial increase in solar cell efficiency. This paper investigates the formation of thin film PSi(porous silicon) layer on the surface of crystalline silicon substrates without other ARC(antirefiection coating) layers. On the other hand the formation of $SO_{2}/SiN_x$ ARC layers on the surface of crystalline silicon substrates. After that, the structure of PSi and $SO_2/SiN_x$ ARC was investigated by SEM and reflectance. The formation of PSi layer and $SO_{2}/SiN_x$ ARC layers on the textured silicon wafer result about 5% in the wavelength region from 0.4 to $1.0{\mu}m$. It is achieved on the textured crystalline silicon solar cell that each efficiency is 14.43%, 16.01%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.146-149
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• 2004

Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.