• Journal of Ginseng Research
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• 제16권2호
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• pp.129-137
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• 1992

This study was carried out to investigate the localization of lipids and lipase activity with lipid staining and cytochemical technique in endosperm cells of Panax ginseng C.A. Meyer seed. In endosperm cells of indehiscent seed, protein bodies facing the umbiliform layer are different in electron density during the various degraded processes. Gradually, protein matrix near the cell wall was lysed and electron lucent inclusions appeared on umbiliform layer. The protein body with high electron density and the spherosome with low electron density were observed in endosperm cells. As a result of lipid staining, electron density of spherosome is more intense than those of the protein matrix within the protein body in endosperm cells of indehiscent seed. Free spherical spherosomes within the umbiliform layer have a high electron density. The spherical spherosomes were more electron densed and were uniform in comparison with the cytoplasmic proteinaceous granules in endosperm cells of seed with red seed coat. The major component of spherosome was determined to be lipid. Lipase activity occurs in the spherosome and near the endosperm cell wall facing the umbiliform layer. Cytochemical reaction products of lipase were observed in the spherosome membrane and in the inner regions of spherosome. After protein bodies were digested, lipase activities were observed in free spherosomes and near the cell wall of endosperm cells. Umbiliform layer composing of fibrillized wall and digested materials of the endosperm cell showed a little lipase reaction products.

• 멤브레인
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• 제24권5호
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• pp.375-385
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• 2014

본 연구에서는 종결정 코팅층이 NaA 제올라이트 분리막 형성에 미치는 영향에 대하여 고찰하였다. NaA 제올라이트 분리막은 평균입경 100 nm 종결정을 다공성 ${\alpha}$-알루미나 표면에 진공여과 코팅하고 $100^{\circ}C$에서 24시간 수열처리하여 합성되었다. 이때 지지체 표면에 분포된 종결정 양을 조절한 후 형성된 NaA 제올라이트 분리층의 두께와 결정입 크기 등 미세구조에 미치는 영향에 대하여 고찰하였다. 종결정 코팅 양은 지지체를 통과한 종결정 수용액의 여과 양을 조절하여 제어하였다. 종결정을 단일층으로 코팅한 후 합성하였을 경우, 코팅 양이 증가함에 따라 분리층 단면에서의 두께와 균일도는 증가하였으며, 표면에서의 결정입 크기는 감소하면서 균일도는 증가하였다. 반면, 종결정을 다층으로 코팅한 후 합성하였을 경우, 균일한 분리층을 형성하였지만 단일층으로 코팅된 경우에 비하여 불균일하였으며 두꺼운 분리층이 형성되었다. 균일하고 초박형의 결함이 없는 제올라이트 분리층을 형성하기 위해서는 종결정을 균일하고 단일층으로 코팅하여야 함을 알 수 있었다. 본 연구로부터 종결정의 코팅 상태가 이차성장에 의한 NaA 제올라이트 분리층의 미세구조를 결정하는 중요한 인자임을 확인할 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.3-4
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• 2008

로직 디바이스에서는 알루미늄을 대신하여 구리로 backend-of-line(BEOL) 금속화공정이 대체되고 있다. 그러나 메모리 디바이스에서 구리 배선으로의 전환이 쉽지 않다. Cu-seed layer는 구리 배선을 메모리 디바이스에 적용하기 위해서 필요한 gap-fill 확장성을 개선하기 위한 중요한 부분을 차지한다. Cu-seed layer 증착을 위한 향상된 PVD 장비인 Eni 스퍼터를 소개한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.229-229
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• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 추계학술발표대회 및 제15회 신소재 심포지엄
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• pp.28.2-28.2
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.72-73
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• 2003

• 한국진공학회지
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• 제21권1호
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• pp.6-11
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• 2012

Sputter 방식으로 증착된 구리 seed 층(구리 seed/Ti/Si) 위에 형성된 오염물 제거과정을 이해하기 위하여, 강력한 계면 활성능력을 가진 약알칼리 탈지제 Metex TS-40A 용액을 사용하여 담금(dipping) 시간에 따른 구리 seed 층 표면의 변화형상 및 변화상태를 조사 분석하였다. Field emission scanning electron microscope을 이용하여 TS-40A 용액에 전처리 후 구리 seed 표면 형상이 grain이 명확히 보일 정도로 변화하는 것을 관찰하였고, X-ray photoelectron spectroscopy를 이용하여 표면 처리된 Cu seed 표면의 화학구조 및 불순물 상태를 조사하였다. TS-40 용액에서의 dipping 시간 변화에 따른 효과는 거의 없었다. TS-40A 용액에 전처리한 후, 구리 seed 층 표면위의 많은 탄소성분이 제거되었고, 약간의 산소가 제거되었으며, O=C 및 $Cu(OH)_2$에 해당되는 피크들이 감소되는 것이 관측되었다. 하지만 표면에서 불순물 Si이 silicate 상태로 검출되었다. TS-40A 용액에 포함되어 있는 silicate 성분이 구리 seed 층과 반응하여 이 silicate 불순물이 구리 seed 표면에 형성된 것으로 보여진다. 약알칼리 탈지제 Metex TS-40A 용액을 사용한 전처리 과정을 통해, 구리 seed 표면 위의 O=C 및 $Cu(OH)_2$ 등의 제거에는 탁월한 효과를 보였으나, 불순물 silicate가 형성되었으므로 이 알칼리 탈지제를 사용한다면, 이후에 산세정 및 다른 세정과정을 거쳐 표면에 존재하는 silicate를 제거할 필요성이 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.328-331
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• 2000

The effect of the constituent elements and their composition of the seed layer on the properties of the evaporated Zn thin films was investigated. It was carried out by the analysis of the preferred orientation and the grain size, and the corrosion characteristics. Seed layers were prepared by evaporation of Al and AlCu respectively, and here the Cu content as additives of the source materials of seed layers were designed 5 a/o to 20 a/o. The values of full width at half maximum (FWHM) of the (002) x-ray diffraction peaks of Zn decreased by increasing the amount of the additives on Al seed layer, as a results, the grain sizes also decreased. In order to characteristics of Zn thin films evaporated on the various seed layers, electrical resistivity changes with a function of time at the temperature of 40$^{\circ}C$ and the relative humidity of 80%, as a result, the relative resistivity changes were increased by decreasing the grain size and the FWHM values of (002) peaks of Zn.

• 한국생활과학회지
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• 제21권2호
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• pp.377-388
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• 2012

The purpose of this study was to determine the content attributes and sensory characteristics of ice cream flavored with lotus leaf and seeds (Nelumbo nucifera Gaertner). Analysis of freeze dried lotus leaf powder produced the following technical results: Freeze dried lotus leaf powder contained moisture 12.2, crude protein 5.9, crude fat 1.2, crude ash 7.0, crude fiber 13.4g/100mg; raw lotus seed powder contained moisture 65.0, crude protein 8.2, crude fat 0.3, crude ash 1.0, crude fiber 10.8g/100mg; freeze dried lotus seed powder contained moisture 14.0, crude protein 17.1, crude fat 1.9, crude ash 4.0, crude fiber 2.8g/100mg. Lotus seed was processed by 4 methods: freeze dried, roasted, freeze dried peeled inner layer, cooked cut peeled inner layer. Analysis of the color value produced the following technical results: freeze dried lotus leaf powder were L(lightness) 14.5, a(redness) 4.4, b(yellowness) 24.0; freeze dried lotus seed powder L 57.3, a 14.4, b 12.0; roasted lotus seed powder L 52.7, a 22.5, b 11.9; freeze dried lotus seed peeled inner layer L 60.0, a 1.4, b 12.3. Proportional lotus ingredients used for ice cream were 1%, 3%, 5%, 7%, 10% for lotus leaves and 1%, 3%, 5% for lotus seeds. The maximum over run ratio for lotus leaf ice cream was 45.3~56.9% at 20~25 minutes operating time. Over run was significantly decreased by increasing the contents of lotus leaf powder. A maximum over run ratio for lotus seed ice cream was 46.1~54.3% at 20~25 operating time. Over run was not significantly different based on content of lotus leaf versus lotus seed. Sensory evaluation of lotus leaf ice cream produced the following results: the highest score was for color of 4.42 and the lowest score was for sweetness of 3.30. The total mean score significantly decreased by increasing the content of lotus leaf powder. Sensory evaluation of lotus seed ice cream produced the following results: the highest score was for cooked cut peeled inner layer type and the lowest was for freeze dried type 3.86. The sensory scores were not significantly different based on the content of lotus seed. Texture was evaluated highest with a rating of 4.21 and the taste was evaluated lowest with a rating of 3.68 For whole evaluation. This study concluded that lotus leaf ice cream demonstrates relative strength in terms of color and taste, and a relative weakness in terms of over run and sweetness. Suitable content of lotus leaf ranged from 1~5%. The lotus seed processed by the cooked cut peeled inner layer method received a higher rating than dried powder for lotus seed ice cream.

• 한국재료학회지
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• 제17권9호
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• pp.469-474
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• 2007

Electroless deposition(ELD) was applied to fabricate Cu interconnections on a TaN diffusion barrier with Pd seed layer. The Pd seed layer was obtained by self-assembled monolayer method(SAM) with PDDA and PSS as surfactants. We were able to obtain about 10nm Pd nano particles as seeds for electroless Cu deposition and the density of Pd seeds was much higher than that of Pd seeds fabricated by conventional Pd sensitization-activation method. Also we were able to obtain finer Cu interconnections by ELD. Therefore we concluded that the Pd seed layer by SAM was able to be applied to form Cu interconnection by ELD for under 30nm feature.