Browse > Article
http://dx.doi.org/10.5757/JKVS.2012.21.1.6

Effects of Pretreatment of Alkali-degreasing Solution for Cu Seed Layer  

Lee, Youn-Seoung (Department of Information Communication Engineering, Hanbat National University)
Kim, Sung-Soo (Department of Techno-marketing, Mokwon University)
Rha, Sa-Kyun (Department of Materials Science and Engineering, Hanbat National University)
Publication Information
Journal of the Korean Vacuum Society / v.21, no.1, 2012 , pp. 6-11 More about this Journal
Abstract
In order to understand a process of contaminants removal on surface of Cu seed layer (Cu seed/Ti/Si) by sputter deposition, we investigated the changed morphology and states of Cu seed surface after pretreatment in alkali degreasing Metex TS-40A solution according to dipping time. After TS-40A pretreatment, the surface morphology with clearer grains was observed by Field emission scanning electron microscope and the changed surface chemical states and impurities on surface of samples were checked by X-ray photoelectron spectroscopy. Dipping time in TS-40A solution had very little effect on surface of Cu seed layer. After pretreatment, much carbons and little oxygens on surface of Cu seed were eliminated and the decrease of peaks corresponded to O=C and $Cu(OH)_2$ was estimated. However, Si content (=silicate) was detected on sample surface. We think that the silicate impurity forms on Cu seed by chemical reaction of TS-40A solution included silicate component. By pretreatment of alkali degreasing Metex TS-40A solution, it showed an excellent effect in removal of O=C and $Cu(OH)_2$ on Cu seed layer, but the silicate was formed on surface of Cu seed. Therefore, another cleaning process such as acid cleaning is required for removal of this silicate in use of this alkali degreasing.
Keywords
Cu contaminants; Alkali degreasing; X-ray photoelectron spectroscopy;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 Y. J. Kang, M. E. Hong, and D. H. Kim, J. Korean Ind. Eng. Chem. 20, 172 (2009).
2 W. Seo, J. H. Park, J. Y. Lee, M. K. Cho, and G. S. Kim, J. Microelect. Pack. Soc. 16, 45 (2009).
3 "Material safety data sheet" (1999 MacDermid Incorporated 203-575-5700)
4 B. Pelissier, A. Beaurain, H. Fontaine, A. Danel, and O. Joubert, Microelectronic Engineering 86, 1013 (2009).   DOI   ScienceOn
5 J. F. Moulder, W. F. Stickle, P. E. Sobol, and K.D. Bomben, Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics Inc., USA, 1995).
6 S. -B. Jung, H. -H. Park, and H. Kim, Thin Solid Films 447-448, 575 (2004).   DOI
7 H. H. Law, R. Roy, D. Korssives, T. C. Wu, and D. D. Bacon. IEEE, 1, 363 (1994).
8 O. J. Kwon, S. K. Cho, and J. J. Kim, Korean Chem. Eng. Res. 47, 141 (2009).
9 Y. K. Lee and T. J. Okeefe, JOM, April, 40 (2002).
10 T. G. Woo, I. S. Park, and K. W. Seol, Kor. J. Mater. Res. 17, 56 (2007).   DOI
11 Y. Song, J. H. Seo, Y. S. Lee, and S. K. Rha, Kor. J. Mater. Res. 19, 344 (2009).   DOI
12 Y. Song, J. H. Seo, Y. S. Lee, Y. H. Ryu, K. Hong, and S. K. Rha, J. Korean Phys. Soc. 54, 1141 (2009).   DOI   ScienceOn
13 J. J. Kim and S. K. Kim, Appl. Surf. Sci. 183, 311 (2001).   DOI