• Korean Journal of Materials Research
• /
• v.24 no.8
• /
• pp.407-412
• /
• 2014

Currently, diopside ($MgCaSi_2O_6$) crystal glaze is used frequently for pottery works or in earthen wares, though the process is not straightforward. However, to create and control the positions and sizes of the crystals in desired amounts when making pottery is difficult. To solve this problem, a diopside crystal seed was created at a temperature of $1450^{\circ}C$. After planting this seed in the glaze, a glaze combination and firing process which allows a user to create crystals with the desired position and at the desired size were established. In addition, in order to investigate the creation process of the crystals, the growth patterns of the crystals were observed and examined using Raman spectrography and XRD and SEM analyses. As a result, the optimum synthesis condition of the diopside seed was created by mixing 1 mole of $CaCo_3$, 0.2 mole of $(MgCo_3)_4(MgCoH)_2{\cdot}5H_2O$ and 2 moles of $SiO_2$ and then applying a firing process to the mixture at $1,450^{\circ}C$ for 30 minutes. The optimum glaze content of the seed was 70 % feldspar, 20 % limestone and 10 % $MgCo_3$. For the firing process, it was confirmed that the size of crystal is larger with a longer firing time at $1100^{\circ}C$ by completing a two-hour process at $1280^{\circ}C$. In addition, the diopside crystal has columnar structure and is less than $1{\mu}m$ in size.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.263-268
• /
• 1998

(100) ZnSe crystals with twin and grain free were grown by vapor transport method. The defect in (100) ZnSe crystals was investigated by FWHM of X-ray Rocking Curve. The growth rate and seed quality are the main parameters of the growth process to obtain the high quality ZnSe crystals. The geometric shape of the grown (100) ZnSe crystal is dependent on the shape of seed, isothermal line in furnace and the growth rate of each surface in crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.1
• /
• pp.48-54
• /
• 2000

Influence of seed addition on the mullite synthesis was investigated from mixture powders of kaolin and aluminium trihydroxide which contain various $Al_2O_3$/SiO_2$ ratio (silica rich, stoichiometric, alumina rich). The flexural strength increases with the increase of the mullite-seed content in case of silica rich and stoichiometric mullite, but flexural strength decreases with the increase of the mullite-seed content in case of alumina rich mullite. Microstructural investigation revealed that aspect ratio of mullite grains increased with higher alumina content, along with lower sintered density. Mullite contents of specimens are increased with seed content regardless of $Al_2O_3$/SiO_2$ ratio of the mixture composition.

• Journal of Magnetics
• /
• v.19 no.4
• /
• pp.333-339
• /
• 2014

Single crystal growth of $BaFe_{12}O_{19}$ by the solid state crystal growth method was attempted. Seed crystals of ${\alpha}-Fe_2O_3$ were pressed into pellets of $BaFe_{12}O_{19}$ + 2 wt% $BaCO_3$ and heat-treated at temperatures between $1150^{\circ}C$ and $1250^{\circ}C$ for up to 100 hours. Instead of single crystal growth taking place on the seed crystal, BaO diffused into the seed crystal and reacted with it to form a polycrystalline reaction layer of $BaFe_{12}O_{19}$. The microstructure, chemical composition and structure of the reaction layer were studied using scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), x-ray Diffraction (XRD) and micro-Raman scattering and confirmed to be that of $BaFe_{12}O_{19}$. XRD showed that the reaction layer shows a strong degree of orientation in the (h00)/(hk0) planes in the sample sintered at $1200^{\circ}C$. $BaFe_{12}O_{19}$ layers with a degree of orientation in the (hk0) planes could also be grown by heat-treating an ${\alpha}-Fe_2O_3$ seed crystal buried in $BaCO_3$ powder.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.2
• /
• pp.129-140
• /
• 1996

In this study, we have prepared corundum ($\alpha$-Al_{2}O_{3}$) single crystals from aluminum hydroxides by hydrothermal growing process and have investigated the reaction conditions. The hydrothermal conditions were mainly affected by reaction temperature, seed crystal and reaction time. Especially, seed crystal has strong effects on the particle size and crystallity of products. By adding seed crystal in Japanese gibbsite solution as the nutrient, hydrothermal reaction was performed for 2 hours at the reaction temperature of $460^{\circ}C$, to produce corundum powders which had weight mean particle diameter of $11\;\mu\textrm{m}$ with hexagonal crystal, Without adding seed crystal in Russian gibbstite solution, corundum powders that have weight mean particle diameter of $6\;\mu\textrm{m}$ with hexagonal crystals were also formed after 2 hours operation at the reaction temperature of $420^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.3 no.2
• /
• pp.117-124
• /
• 1993

It was found that the basic principle of continuous crystal growth method was following as; the powder supplied from the feeding system is molten in the graphite crucible under the ambient gas. After forming the molten zone in the lower part of the crucible, the seed crystal is deeped into the melt and pulled down with the rotation so that the melt crystallized from the seed. When the lowering rate, rotation rate, feeding rate and temperature are correct, the single crystal can grow. The critical melt level, the feeding rate, the growth rate, the change of the shape of molten zone by the graphite susceptor and crucible, the position of work coil, the balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed which are the variables of the crystal growth and the sintering phenomenon of melt surface were researched.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.2
• /
• pp.111-118
• /
• 1994

Silicon single crystals were continuously grown by a modified process. Polycrystalline silicon powder was fed from the top reservoir to the growth chamber. Silicon single crystals were grown from the botton of the growth chamber. The balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed was the one of the main factors to control the diameter of crystals grown and quality, etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.10
• /
• pp.799-802
• /
• 2011

In this study, SiC single-crystal ingots were prepared on two seed crystals with different doping level by using the physical vapor transport (PVT) technique; then, SiC crystal wafers sliced from the grown SiC ingot were systematically investigated to find the effect of seed doping level on the doping concentration and crystal quality of the SiC. To exclude extra effects induced by adjustment of the process parameters, we simultaneously grew the SiC crystals on two seed crystals with different level, which were fabricated from previous two SiC crystal ingots.

• Journal of Korean Society of Environmental Engineers
• /
• v.30 no.2
• /
• pp.207-212
• /
• 2008

This study focused on shorten the period of the struvite crystal birth and development by adding seed materials. For this purpose, three different seed materials were selected: sand, anthracite and struvite. The experiments has been conducted to evaluate the effect of the particle size of the selected seed material on the struvite crystallization, and to study the mixing effect which can be expressed by the value of $G{\cdot}t_d$(the multiple of mean velocity gradient(G) and mixing time($t_d$)). It was observed in this study that the removal efficiency of ammonia nitrogen increased by 9%, 11%, and 20% for sand, anthracite, and struvite added as the seed material, respectivley. This indicated that the struvite crystallization efficiency had a close correlation with the specific surface area of the seed particle. It was found that when struvite was selected as the seed material, the struvite crystallization proceeded at lower $G{\cdot}t_d$ value as compared with other seed materials. This observation implied that the secondary crystal birth would be dominated in this reaction. It was concluded in this study that the particle size was not significant factor on the struvite crystallization, while the $G{\cdot}t_d$ value was a considerably important factor in terms of the theory of the struvite crystal birth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.7
• /
• pp.673-679
• /
• 2006

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. In this study, SiC crystal boules were prepared with different angles in trapezoid-shaped graphite seed holders using sublimation physical vapor transport technique (PVT) and then their crystal quality was systematically investigated. The temperature distribution in the growth system and the crystal shape were varied with angles in trapezoid-shaped graphite seed holders, which was successfully simulated using 'Virtual Reactor'. The SiC polytype proved to be the n-type 6H-SiC from the typical absorption spectrum of SiC crystal. The micropipe densities of SiC wafers in this study were measured to be < $100/cm^2$. Consequently, SiC single crystal with large diameter was successfully achieved with changing angle in trapezoid-shaped graphite seed holders.