• KSCE Journal of Civil and Environmental Engineering Research
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• v.14 no.3
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• pp.495-508
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• 1994

A backcalculation procedure to determine the layer moduli of flexible pavement structure is developed using matrix solution technique. Forward calculation computer program adopted in this backcalculation procedure is SINELA which is one of layered elastic computer programs. Data base system is used as a tool for setting initial seed moduli and depth to virtual bedrock in backcalculation procedure. The validity and applicability of the proposed backcalculation procedure are verified through various numerical model tests. From the results of comparison analysis with FPEDD1, it is found that the proposed procedure gives more efficient and accurate results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.317-321
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• 2014

Hydrothermal synthesis technique could be carried out for growth of ZnO nanowires at relatively low process temperature, and it could be freely utilized with various substrates for fabrication process of functional electronic devices. However, it has also a demerit of relatively slow growth characteristics of the resulting ZnO nanowires. In this paper, an external DC bias of positive and negative 0.5 [V] was applied in the hydrothermal synthesis process for 2~8 [h] to prepare ZnO nanowires on a seed layer of AZO with high electrical conductivity. Growth characteristics of the synthesized ZnO nanowires were analyzed by FE-SEM. Material property of the grown ZnO nanowires was examined by PL analysis. The ZnO nanowires grown with positive bias revealed distinctively enhanced growth characteristics, and they showed a typical material property of ZnO.

• Korean Journal of Materials Research
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• v.30 no.4
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• pp.160-168
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• 2020

The current density in copper electroplating is directly related with the productivity; then, to increase the productivity, an increase in current density is required. This study is based on an analysis of changes in surface characteristics and mechanical properties by applying the addition of Alcian Blue (AB, C₅₆H₆₈Cl₄CuN₁₆S₄). The amount of Alcian Blue in the electrolytes is changed from 0 to 100 ppm. When Alcian Blue is added at 20 ppm, a seed layer is formed homogeneously on the surface at the initial stage of nucleation. However, crystals electroplated in electrolytes with more than 40 ppm of Alcian Blue are observed to have growth in the vertical direction on the surface and the shapes are like pyramids. This tendency of initial nucleation formation causes protrusions when the thickness of copper foil is 12 ㎛. Thereafter, a lot of extrusions are observed on the group of 100 ppm Alcian Blue. Tensile strength of groups with added Alcian Blue increased by more than 140% compare to no-addition group, but elongation is reduced. These results are due to the decrease of crystal size and changes of prior crystal growth plane from (111) and (200) to (220) due to Alcian Blue.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.54-54
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• 2010

This article reports a spontaneous method for controlling the growth mode from vertically arrayed ultra-slim MgZnO nanowires to nanowalls through the Zn random motion of seeds formed by surface phase separation by Mg injection near an evaporation temperature of Zn. The random motion of single crystal MgZnO seeds with relative Zn rich phase played a vital role in the growth of the MgZnO nanowalls. The seeds were networked with increasing Zn flux compared with Mg flux and closing to the evaporation temperature of Zn on phase separation layers. We achieved fabrication of MgZnO nanowalls on various non- and conducting substrates by this advanced growth method. The MgZnO nanowalls hydrogen sensor showed an improved sensing performance compared to the MgZnO nanowires grown under the similar conditions. Based on the microstructural characterizations, the growth procedure and models for the evolution of the structure transition from MgZnO nanowires to nanowalls on the Si substrates are proposed for phased growth times.

• Journal of the Korean Electrochemical Society
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• v.20 no.1
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• pp.1-6
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• 2017

This study investigated the effect of surface pretreatment, which removes native Cu oxides on Cu seed layer, on subsequent Cu electro-/electroless deposition in Cu interconnection. The native Cu oxides were removed by using citric acid-based solution frequently used in Cu chemical mechanical polishing process and the selective Cu oxide removal was successfully achieved by controlling the solution composition. The characterization of electro-/electrolessly deposited Cu films after the oxide removal was then performed in terms of film resistivity, surface roughness, etc. It was observed that the lowest film resistivity and surface roughness were obtained from the substrate whose native Cu oxides were selectively removed.

• Journal of Mechanical Science and Technology
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• v.18 no.2
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• pp.313-324
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• 2004

A rich phenomenon in the dynamics of azimuthal vortices in a circular cylinder caused by the inertial oscillation is investigated numerically at high Reynolds numbers and moderate Rossby numbers. In the actual spin-up flow where both the Ekman circulation and the bottom friction effects are included, the first appearance of a seed vortex is generated by the Ekman boundary-layer on the bottom wall and the subsequent roll-up near the corner bounded by the side wall. The existence of the small vortex then rapidly propagates toward the inviscid region and induces a complicated pattern in the distribution of azimuthal vorticity, i.e. inertial oscillation. The inertial oscillation however does not deteriorate the classical Ekman-pumping model in the time scale larger than that of the oscillatory motion. Motions of single vortex and a pair of vortices are further investigated under a slip boundary-condition on the solid walls. For the case of single vortex, repeated change of the vorticity sign is observed together with typical propagation of inertial waves. For the case of a pair of vortices with a two-step profile in the initial azimuthal velocity, the vortices' movement toward the outer region is resisted by the crescent-shape vortices surrounding the pair. After touching the border between the core and outer regions, the pair vortices weaken very fast.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.16 no.4
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• pp.41-52
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• 2013

This study was carried out in order to analyze the succession characteristics of the slope of expressways and the results of analysis by collecting and analyzing various literatures and data from 2011 to 2012 and surveying 75 expressway slope, as follows : The construction methods applied to planting the slope of an expressway can be classified into 4 types including 3 Climber planting methods, 8 Vegetation thick-layer spray work methods, 4 Seed spray work methods, and 4 Stabilization work methods. The factors which affect the cover degree of the slope of an expressway were found to be development years, gradient, length, and azimuth. Like surrounding forest areas, the expressway slope was analyzed to begin the plant succession 20, 30, and 40 years after development, and plant succession was developed in diversity in a mixed stand forest according to surrounding forest floors. Species diversity, maximum species diversity, and the evenness of slope facing north were analyzed to be high comparing to those facing east, west, and south according to azimuth of slope. Species diversity, maximum species diversity, evenness of slope, and the plant succession of surroundings were analyzed to be high when the gradient of the slope was less than $40^{\circ}$. The dominant species which success on the slope of an expressway and its surrounding forest area included Miscanthus sinensis var. purpurascens, Zoysia japonica, Pinus thunbergii Parl, Rubus crataegifolius, Lespedeza cyrtobotrya, Amorpha fruticosa, Artemisia princeps var. orientalis, and Oenothera biennis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.242-245
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• 2009

AlN crystals were grown by a sublimation process without seed crystals and the growth morphology of them was characterized. The grown AlN crystals were a polycrystalline phase, which had a diameter of $60\sim200\;{\mu}m$ and were grown with a growth rate of $0.2\sim0.5\;{\mu}n/hr$. It was observed that the as-grown crystals had a hexagonal crystal structure and revealed that these crystals were grown with a morphology of columnar morphology in the initial stage of the growth before they were enlarged in a way of a lateral growth behavior in the final stage. On the surface, a lot of pinholes were observed on the surface of crystals grown. The evolution of a growth morphology was characterized by optical and scanning electron microscopic observation.

• The Korean Journal of Ecology
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• v.6 no.3
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• pp.227-235
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• 1983

This research was made over drought resistance and optimum soil moisture needed with Plantago asiatica L. as the material by means of making out the process of its growth under different soil moisture contents. The soil used for the experiment was a mixture of vermiculite and c-layer soil, and the process of growth was compared with each other controlling its soil mositure as: 7%, 15%, 30%, 45%, and 60%. In 7% range of soil moisture which was of low content, the increase of growth was neither significantly indicated nor any permanent seeding done. In view of this phenomenon, Plantago asiatica L. appeared to be highly drought-resistant. It was found rising at 30% range and reaching the optimum state at 45% range and falling down at 60% range range. In viw of this fluctuation indicated above, the optimum soil moisture content needed for the growth of Plantago asiatica L. is thought to be between 30% and 60%. It is thought the number of seed per capsule is not affected by the soil moisture content. It is expected an ecotypic variation by the soil moisture content will bring forth upon Plantago asiatica L.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.526-529
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• 2002

Various fluoride films on a glass substrate were prepared and characterized in order to determine the best seed layer for a microcrystalline silicon (${\mu}c$-Si) film growth. Among the various group-IIA-fluoride systems, the $CaF_2$films on glass substrates illustrated (220) preferential orientation and a lattice mismatch of less than 0.7% with Si. $CaF_2$ films exhibited a dielectric constant between $4.1{\sim}5.2$ and an interface trap density ($D_{it}$ as low as $1.8{\times}10^{11}\;cm^{-2}eV^1$. Using the $CaF_2$/glass structure, we were able to achieve an improved ${\mu}c$-Si film at a process temperature of 300 $^{\circ}C$. We have achieved the ${\mu}c$-Si films with a crystalline volume fraction of 65%, a grain size of 700 ${\AA}$, and an activation energy of 0.49 eV.