• Carbon letters
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• v.12 no.1
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• pp.48-52
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• 2011

The conducting polymer-coated multi-walled carbon nanotubes (MWCNTs) were prepared by template polymerization of aniline and pyrrole on the surface of MWCNTs in order to develop the novel electromagnetic interference (EMI) shielding materials. The conducting polymer phases formed on the surface of MWCNTs were confirmed by field emission-scanning electron microscopy and field emission-transmission electron microscopy. Both permittivity and permeability were significantly improved for the conducting polymer-coated MWCNTs due to the intrinsic electrical properties of MWCNTs and the conducting properties of coated polymers. The electromagnetic waves were effectively absorbed based on the permittivity nature of conducting polymer and MWCNTs preventing the secondary interference from reflecting the electromagnetic waves. The highly improved EMI shielding efficiency was also obtained for the conducting polymer-coated MWCNTs showing the synergistic effects by combining MWCNTs and the conducting polymers.

• Progress in Superconductivity
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• v.14 no.2
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• pp.92-95
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• 2012

Superconducting detectors are promising as ion detectors for time-of-flight mass spectrometers (TOF MS). They can achieve mass-independent detection efficiency even for macromolecular bombardments, because output signals are produced through the deposited kinetic energy at ion impact instead of secondary electron emission that is the ion detection mechanism of conventional microchannel plate (MCP) detectors or secondary electron multipliers (SEM). Among the superconducting detectors, the superconducting strip ion detectors (SSIDs), which consist of several hundreds of superconducting lines with a width of a few hundreds nm and a thickness of a few tens of nm, have a fast response time of less than 1 ns. Inherently, the response time of SSIDs is determined by kinetic inductance, so that it was difficult to realize a fast SSID with a large detection area. However, we succeeded in realizing the detector size up to $5{\times}5mm^2$ without response time degradation by using a parallel configuration.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.200-202
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• 1996

MgO film was deposited on the glass substrate by the hollow cathode discharge ion plating method and the characteristics of the MgO thin film such as deposition rate, crystalline orientation, surface morphology and secondary electron coefficient were investigated. The deposition rate of MgO thin films were $430^{\sim}1270{\AA}$/min at various temperatures and biases. The crystalline orientation of the MgO thin film changed from (200) to (220) upon increasing the HCD current from 100A to 200A. These results indicated that the crystallin orientation of the MgO thin film was determined by the super-saturation ratio. The (200) peak decreased and the (220) peak increased as the substrate bias increased, while both peaks increased as the substrate temperature increased. The grain size increased as the substrate bias increased and the secondary electron emission coefficient increased as the substrate bias increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.117-118
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• 2000

The secondary electron emission coefficient ${\gamma}$ of MgO single crystals according to the gas mixture ratio of Xe to Ne have been investigated by ${\gamma}-focused$ ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest ${\gamma}$ from 0.09(0.03) up to 0.16(0.04), while from 0.07(0.02) to 0.15(0.03) for (200) and from 0.06(0.01) to 0.13(0.02) for (220) crystallinity for operating Ne (Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the ${\gamma}$ ranged from 0.03 up to 0.06 for Ne-Xe mixtures are much smaller than those of 0.09 up to 0.16 for pure Ne ions under accelerating voltage ranged from 50V to 200V.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.113-114
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• 2000

The secondary electron emission coefficient(${\gamma}$) of vacuum annealed MgO films has been investigated by ${\gamma}-focused$ ion beam(${\gamma}-FIB$) system. The vacuum annealed MgO films have been found to have higher ${\gamma}$ values from 0.053 up to 0.121 than those for as-deposited MgO films from 0.026 up to 0.062 for $Ne^+$ ion energies ranged from 50eV to 200eV. Also it is found that ${\gamma}$ for air hold of vacuum annealed MgO layers for 24-hours is similar to that for vacuum annealed MgO films without any air-hold.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.31-36
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• 2001

The secondary election emission (SEE) yields for the thermally grown $SiO_2$ thin layers were measured by varying the thickness of the $SiO_2$ layer and the primary current. $SiO_2$ thin layers were thermally grown in a furnace at $930^{\circ}C$, whose thickness varied to be 5.8 nm, 19 nm, 43 nm, 79 nm, 95 nm, and 114 nm. When the $SiO_2$ layers were thinner than 43 nm, it was found that SEE curves followed the universal curve. However, for samples with a $SiO_2$ layer thicker than 79 nm, the SEE curves exhibited two maxima and the values of SEE yields were reduced. Additionally, as the current of primary electrons increased, the SEE yields were reduced. In this experiment, the maximum value of the SEE yield for $SiO_2$ layers was obtained to be 3.35 when the thickness of $SiO_2$ layer was 19 nm, with the primary electron energy 300 eV and the primary electron current 0.97 $\mu\textrm{A}$. The penetration and escape depth of an electron in the $SiO_2$ layers were calculated at the primary electron energy for the maximum value of the SEE yield and from these depths, it was calculated that the thickness of the $SiO_2$layer.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.3-6
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• 2007

The Light brightness is to enhance the luminescence efficiency of phosphor including conductive material. In preparing the anode layer, phosphors mixed with conductive material prepared with pastes of polymer resin using by screen printing method. When the prepared anode layer bombarded by cold electron from emitter of cathode, it give rise to form the secondary electron from those of conductive materials such as ITO powder. Furthermore, we are expect to enhance the luminescence efficiency more than without conductive material.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2441-2445
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• 2009

The effects of Si -doped MgO have been investigated in order to improve the material properties of the MgO protective layer in plasma display panels. A small amount of Si is added to the MgO pellet while the MgO layer is being deposited by using an electron-beam evaporation method. Both the surface characteristics of the protecting layer and the electro-optical properties of 4 in. test panels are investigated, such as XRD patterns, SEM images, firing and sustain voltages, secondary electron emission coefficient($\gamma$), luminance, luminous efficacy and lifetime. The firing and sustain voltage are minimized when Si concentration is 0.038%, where the luminance and luminous efficacy increase up to 17% and 26% compared with that of the pure MgO film, separately, and lifetime also shows good characteristics.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1834-1836
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• 1997

In this study, we simulated the developing process of two-dimensional corona discharge using the fluid method in 760 torr. It was assumed that the transport coefficients of nitrogen gas were only the function of local electric field. Discharge mechanisms considered were a Townsend first ionization and a secondary electron emission. We obtained spatio-temporal distribution of electron and ion by calculating continuity equation using FCT algorithm and calculated an electric field distribution considering a space charge.