• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.93-94
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• 2006

The sheath of a single-conductor cable for ac service acts as a secondary of a transformer, the current in the conductor induces a voltage in the sheath. When the sheaths of single-conductor cables are bonded to each other, as is common practice for multi-conductor cables, the induced voltage causes current to flow in the completed circuit. This current causes losses in the sheath. Various methods of bonding may be used for the purpose of minimizing sheath losses. In korea, sheath cross bonding system was employed for the prevention of sheath losses, the sheaths wire subjected to at voltages, and the bonding was designed to keep the magnitude of the induced voltages within small limits so as to prevent the possibility of sheath corrosion. But, sheath cross bonding system without transposition of cable can not achieve an exact balance of induced sheath voltages unless the cables are lain in trefoil. This paper describes a transposition system with sheath cross bonding using EMTP(Electromagnetic Transient Program). The transposition system with cross bonding can be extended to longer cable circuits for laid in flat as wall as trefoil by the methods described in this paper.

• 한국세라믹학회지
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• 제40권1호
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• pp.69-76
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• 2003

리튬이차 박막전지로서, 실리콘 첨가(0, 2, 6, 10, 20㏖%)에 따른 주석 산화물 박막을 기판온도 30$0^{\circ}C$, Ar:O$_2$=7:3으로 R.F. magnetron sputtering법으로 제조하였다. 실리콘의 함량이 증가함에 따라, Si-O 결합량이 증가하고 Sn-O 결합량은 감소하였다. 적정량의 실리콘 첨가는 주석의 산화상태를 감소시켜 비가역성을 줄이고 충방전 동안 주석의 부피변화를 막아 사이클 특성이 향상되는 결과를 보여주었다. 6㏖% Si를 첨가한 주석 산화물 박막은 100사이클동안 700mAh/g의 용량을 가지는 가장 좋은 사이클 특성을 나타내었다.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제9권10호
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• pp.4034-4053
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• 2015

In order to meet various requirements for transmission quality of both primary users (PUs) and secondary users (SUs) in cognitive radio networks, we introduce a channel bonding mechanism for PUs and a channel reservation mechanism for SUs, then we propose a novel spectrum allocation strategy. Taking into account the mistake detection and false alarm due to imperfect channel sensing, we establish a three-dimensional Markov chain to model the stochastic process of the proposed strategy. Using the method of matrix geometric solution, we derive the performance measures in terms of interference rate of PU packets, average delay and throughput of SU packets. Moreover, we investigate the influence of the number of the reserved (resp. licensed) channels on the system performance with numerical experiments. Finally, to optimize the proposed strategy socially, we provide a charging policy for SU packets.

• BMB Reports
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• 제44권2호
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• pp.118-122
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• 2011

Most widely used secondary structure assignment methods such as DSSP identify structural elements based on N-H and C=O hydrogen bonding patterns from X-ray or NMR-determined coordinates. Secondary structure assignment algorithms using limited $C{\alpha}$ information have been under development as well, but their accuracy is only ~80% compared to DSSP. We have hereby developed SABA (Secondary Structure Assignment Program Based on only Alpha Carbons) with ~90% accuracy. SABA defines a novel geometrical parameter, termed a pseudo center, which is the midpoint of two continuous $C{\alpha}s$. SABA is capable of identifying $\alpha$-helices, $3_{10}$-helices, and $\beta$-strands with high accuracy by using cut-off criteria on distances and dihedral angles between two or more pseudo centers. In addition to assigning secondary structures to $C{\alpha}$-only structures, algorithms using limited $C{\alpha}$ information with high accuracy have the potential to enhance the speed of calculations for high capacity structure comparison.

• Composites Research
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• 제36권4호
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• pp.246-252
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• 2023

멤브레인 형 LNG 화물창시스템(Cargo containment system, CCS) 내 유리섬유 강화 복합재료 기반 2차 방벽 설치 시 본딩 자동화 머신(automatic bonding machine, ABM) 활용한 prolonged 구조임과 동시에 양단 접착 고정 사이 비 접착(non-bonding, N-B) 영역의 복합재에서 극저온 열 수축 기인한 상당한 열 응력이 발생하기 때문에 이를 고려한 구조 안전성평가 관점에서 수행된 연구가 있으나 실제로 무한히 긴 길이 고려한 기계적 물성 평가를 수행한 연구는 찾아볼 수가 없었다. 해당 복합재는 파단강도 분산이 큰 세라믹 재료 취성 파괴임을 고려하여 2-파라미터 Weibull 통계분석을 통해 실제 길이 대상 신뢰도 있는 기계적 물성치 값을 표준화 하였으며 LNG 운반 환경을 고려한 극저온 환경까지의 특정 온도별 단축 인장실험을 수행하였다. 실험결과, -70℃에서 기계적 강도가 -20℃에 비해 약 1.5배 급증하고 초기 권축 섬유 신장의 비선형 거동이 억제되었다. 또한, 극저온 환경까지 온도가 낮아질수록 기계적 강도는 계속해서 증가하였으나 반대로 연신은 줄어드는 저온 취성의 현상이 확인되었다. 본 연구에서 제시하는 기계적 물성치 데이터는 멤브레인 형 LNG 화물창 구조 안전성 평가 시 신뢰도 높은 해석 지원 물성치 확보 측면에서 유용하게 적용되어지리라 사료된다.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• 항공우주시스템공학회지
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• 제10권1호
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• pp.43-50
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• 2016

In order to suggest the optimal manufacturing technology of composite wings of solar-powered unmanned aerial vehicles, this study compared forming technologies to reduce wing weight for long-endurance flight and to improve the manufacturing process for cost-saving and mass production. It compared the manufacturing time and weight of various composite wing molding technologies, including cocuring, secondary bonding, and manufacturing by balsa. As a result, wing weight was reduced through cocuring methods such as band type composite fiber/tape lamination technology, which enabled prolonged flight duration. In addition, the reduced manufacturing time led to a lower cost, which is a good example of weight lightening for not only small solar-powered UAVs, but also composite aircraft.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.