• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.42 no.3 s.333
• /
• pp.25-32
• /
• 2005

In this papers, we first, therefore, designed VCO(voltage controlled oscillator) that is composed of the dielectric resonator and the varactor diode, and then designed and fabricated PLDRO(phase locked dielectric resonator oscillator) that is combined with the sampling phase detector and loop filter. The measured results of the fabricated PLDRO at 12.05 [GHz] show the output power is 13.54 [dBm], frequency tuning range approximately +/- 7.5 [MHz], and Power variation over the tuning range less than 0.2 [dB], respectively. The phase noise which effects on bits error rate in digital communication is obtained with -114.5 [dBc/Hz] at 100 [KHz] offset from carrier, and The second harmonic suppression is less than -41.49 [dBc]. These measured results are found to be more improved than those of VCO without adopting PLL, and the phase noise and power variation performance characteristics show the better performances than those of conventional PLL.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.38 no.11
• /
• pp.63-70
• /
• 2001

We demonstrate the MMIC (monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 GHz local oscillator signals from 14.5 GHz input signals. These devices were designed and fabricated by using the M MIC integration process of $0.1\;{\mu}m$ gate-length PHEMTs (pseudomorphic high electron mobility transistors) and passive components. The measurements showed S11 or -9.2 dB at 145 GHz, S22 of -18.6 dG at 29 GHz and a minimum conversion loss of 18.2 dB at 14.5 GHz with an input power or 6 dBm. Fundamental signal of 14.5 GHz were suppressed below 15.2 dBe compared to the second harmonic signal at the output port, and the isolation characteristics of fundamental signal between the input and the output port were maintained above :i0 dB in the frequency range 10.5 GHz to 18.5 GHz. The chip size of the fabricated MMIC frequency doubler is $1.5{\times}2.2\;mm^2$.

• Korean Journal of Optics and Photonics
• /
• v.19 no.3
• /
• pp.229-236
• /
• 2008

The optimum conditions of second harmonic generation (SHG) can be successfully achieved experimentally using single pass and double pass methods of a pumping beam. The beam has a power of several Watts radiated by a DOFA (Diode Laser Oscillator & Fiber Amplifier) system, which is a high power CW wavelength tunable infrared laser system, in a PPLN (Periodically Poled MgO doped Lithium Niobate) nonlinear crystal. In the case of a single pass method, the parameters are the wavelength of 535 nm for SHG and the output power of 245 mW generated from the pumping input beam with wavelength of 1070 nm and the power of 2.45 W at phase matching temperature of $108.9^{\circ}C$. The conversion efficiency of SHG was 10%. In order to enhance the output of SHG, the double pass method of the SHG system of a PPLN using a concave mirror for the retroreflection and a pair of wedged flat windows for phase compensation was also presented. In this double pass system, we obtained the SHG output beam with the wavelength of 535 nm and the maximum power of 383 mW at optimum phase matching temperature of $108.5^{\circ}C$ by using an incident pumping beam with wavelength of 1070 nm and the power of 2.45 W. The maximum conversion efficiency is 15.6%, which is more than that of the single pass method.

• Korean Journal of Optics and Photonics
• /
• v.7 no.3
• /
• pp.251-259
• /
• 1996

Two-Photon Fluorescence (TPF) experiment measures temporal width of an amplified short laser pulse which has passed through a four-pass Nd: glass amplifier, after selecting a single pulse from pulse train Q-switched and mode-locked(QSML) in Nd:YLF master oscillator. Determination of pulsewidth and pulseshape was also made with detection of autocorrelation trace of CW mode-locked pulse train by using noncollinear type I Second Harmonic Generation (SHG) method. The observed TPF track showed various patterns, depending on pulse-selecting position in QSML pulse train. That is, autocorrelation of a pulse extracted at front of the train displayed smooth pulse shape, while one from the trailing part of the train created many sharp spikes and substructure in the pulse. By TPF method, pulsewidth was measured to be 44.4 ps with contrast ratio of 2.86 which enabled us to find out energy fraction of a pulse to total energy, (sum of pulse and background); we obtain the value of 0.62. Pulsewidth of 46.6ps was also acquired in another SHG experiment with the help of only mode-locked pulse train. On the other hand, we confirmed that shape of the pulse is close to $sech^2$ one as a result of fitting the SHG autocorrelation signal with various functions. With simulation using this $sech^2$ type of pulse, pulsewidth reduction of the beam, having passed through four-pass amplifier, was also verified.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.3
• /
• pp.45-54
• /
• 2014

In this paper, We have designed and fabricated 20 InP Gunn diodes using a current limiting epitaxial structure by MINT's optimized fabrication processes. We have also packaged the fabricated InP Gunn diodes using our optimized packaging method, and then designed and fabricated a W-band waveguide FTO to measure characteristics of the packaged InP Gunn diodes. The packaged InP Gunn diode have a ceramic ring, a Au plated stud and a lid, and a Maltese cross. The fabricated InP Gunn diodes have good RF characteristics such as high output powers (11.8~17 dBm) and limiting low currents (less than 400 mA) between 92.9 and 94.78 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.9
• /
• pp.71-80
• /
• 2007

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.