• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.127-127
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.124-124
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• 2002

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.598-603
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• 2016

The recent development of electro-optic devices and anticorrosion media has led to the necessity to investigate infrared optical systems with solid-solid interfaces of materials that often have the characteristic of amorphousness. One of the most promising classes of materials for those purposes seems to be the chalcogenide glasses. Chalcogenide glasses, based on the Ge-Sb-Se system, have drawn a great deal of attention because of their use in preparing optical lenses and transparent fibers in the range of 3~12 um. In this study, amorphous Ge-Sb-Se chalcogenide for application in an infrared optical product design and manufacture was prepared by a standard melt-quenching technique. The results of the structural, optical and surface roughness analysis of high purity Ge-Sb-Se chalcogenide glasses are reported after various annealing processes.

• Korean Journal of Materials Research
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• v.32 no.12
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• pp.515-521
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• 2022

Various types of optical materials and devices used in special environments must satisfy durability and optical properties. In order to improve the durability of zinc sulfide multispectral (MS ZnS) substrates with transmission wavelengths from visible to infrared, Ge-Sb-Se-based chalcogenide glass was used as a sealing material to bond the MS ZnS substrates. Wetting tests of the Ge-Sb-Se-based chalcogenide glass were conducted to analyze flowability as a function of temperature, by considering the glass transition temperature (T_g) and softening temperature (T_s). In the wetting test, the viscous flow of the chalcogenide glass sample was analyzed according to the temperature. After placing the chalcogenide glass disk between MS ZnS substrates (20 × 30 mm), the sealing test was performed at a temperature of 485 ℃ for 60 min. Notably, it was found that the Ge-Sb-Se-based chalcogenide glass sealed the MS ZnS substrates well. After the MS ZnS substrates were sealed with chalcogenide glass, they showed a transmission of 55 % over 3~12 ㎛. The tensile strength of the sealed MS ZnS substrates with Ge-Sb-Se-based chalcogenide glass was analyzed by applying a maximum load of about 240 N, confirming its suitability as a sealing material in the far infrared range.

• Journal of Powder Materials
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• v.12 no.4 s.51
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• pp.291-295
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• 2005

CdSe hollow sphere with average size of about 30-50 nm was synthesized from the mixed solution of cadmium chloride $(CdCl_2)$, sodium selenosulfate $(Na_2SeSO_3)$ and ethylenediamine(EDA, $H_2NCH_2CH_2NH_2$) at room temperature. The molar ratio of EDA to $Cd^{2+}$ showed the most significant effect on the morphology of CdSe hollow sphere. This paper will present and discuss the possible formation mechanism of CdSe hollow sphere based on the observation of morphological changes.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.84-88
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• 2007

CdSe hollow spheres with the diameter of about 30-50 nm were synthesized after ultrasonic irradiation in the presence of $Cd(NO_3)_2,\;Na_2SeSO_3$, and polyvinylalcohol(PVA). The characteristics of CdSe hollow spheres were analyzed using X-ray diffraction(XRD), transmission electron microscopy(TEM), UV-vis measurement and PL spectrometer. The characteristics of solvent as water and water-1-propanol mixture in the system played important roles on the controlled synthesis of hollow sphere. Based on the observation of morphological difference of CdSe, the possible mechanism of CdSe hollow sphere formation will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.381-391
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• 2018

In this work, photocatalytic $CO_2$ reduction over a CdSe-graphene-$TiO_2$ nanocomposite has been studied. The obtained material was successfully fabricated via ultrasonic technique. The physical properties of the as-synthesized materials were characterized by some physical techniques. The $TiO_2$ and CdSe dispersed graphene nanocomposite showed excellent results of strong reduction rates of $CO_2$ compared to the results of bare $TiO_2$ and binary CdSe-graphene. An outstanding point of the combination of CdSe-$TiO_2$ and graphene appeared in the form of great photocatalytic reduction capability of $CO_2$. The photocatalytic activity of the asfabricated composite was tested by surveying for the photoreduction of $CO_2$ to alcohol under UV and visible light irradiation, and the obtained results imply that the as-prepared CdSe-graphene-$TiO_2$ nanocomposite is promising to become a potential candidate for the photocatalytic $CO_2$ reduction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• Korean Journal of Materials Research
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• v.31 no.11
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• pp.619-625
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• 2021

Cu₂ZnSn(S,Se)₄ (CZTSSe) based thin-film solar cells have attracted growing attention because of their earth-abundant and non-toxic elements. However, because of their large open-circuit voltage (V_oc)-deficit, CZTSSe solar cells exhibit poor device performance compared to well-established Cu(In,Ga)(S,Se)₂ (CIGS) and CdTe based solar cells. One of the main causes of this large V_oc-deficit is poor absorber properties for example, high band tailing properties, defects, secondary phases, carrier recombination, etc. In particular, the fabrication of absorbers using physical methods results in poor surface morphology, such as pin-holes and voids. To overcome this problem and form large and homogeneous CZTSSe grains, CZTSSe based absorber layers are prepared by a sputtering technique with different RTA conditions. The temperature is varied from 510 ℃ to 540 ℃ during the rapid thermal annealing (RTA) process. Further, CZTSSe thin films are examined with X-ray diffraction, X-ray fluorescence, Raman spectroscopy, IPCE, Energy dispersive spectroscopy and Scanning electron microscopy techniques. The present work shows that Cu-based secondary phase formation can be suppressed in the CZTSSe absorber layer at an optimum RTA condition.