• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.84-84
• /
• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I$_2$ (D$^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3meV The exciton peak, lid, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The I$_1$$\^$d/ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a (V$\sub$se/ - V$\sub$zn/) - V$\sub$zn-/

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.134-137
• /
• 2009

Commercially available elemental powders of Cu, Zn, Sn and Se were employed for crystallizing a stannite-type $Cu_2ZnSnSe_4$ compound by means of solid state reaction. $Cu_2ZnSnSe_4$ reaction chemistry was also modeled based on differential-thermal analysis and X-ray powder diffraction results. It was observed that Se tends to react preferably with Cu to form CuSe and $CuSe_2$ phases at low reaction temperature. The formation of $Cu_5Zn_8$ intermetallic phase was found to be the intermediate reaction path for the binary ZnSe formation. A solid state reaction at $320^{\circ}C$ reacted elemental powderst obinary selenides of CuSe, ZnSe and SnSe completely. The crystallization of $Cu_2ZnSnSe_4$ was was detected to begin at $300^{\circ}C$ and its weight fraction increased with an increase of reaction temperature, which most probably formed from the reaction between $Cu_2SnSe_3$ and ZnSe.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.3
• /
• pp.105-110
• /
• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_{2}$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV, The exciton peak, $I_{1}^{d}$ at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_{1}^{d}$ peak was dominantly observed in the ZnSe/GaAs : Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs : Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{se}-V_{zn})-V_{zn}$.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1437-1439
• /
• 1996

In this paper, investigations on a three stage processing technique involving the co-evaporation of In-Se, Cu-Se and In-Se in this order at different deposition condition was undertaken. At first stage, we obtained good $In_{2}Se_{3}$ films by In-Se coevaporation. $In_{2}Se_{3}$ films show smooth and dense structure. And ration of In:Se was 2:3 $CulnSe_2$ thin films deposited by three stage process have shown strong adhesion on Mo coated glass substrates and good morphological properties suitable device fabrication. XWD spectra show single phase chalcopyrite $CulnSe_2$ films with strong orientation in the 112 plane. Resistivity of $CulnSe_2$ thin films was about $5{\times}10^{5}\;{\Omega}{\cdot}cm$. Surface morphology of CdS/$CulnSe_2$/Mo films was very good because of no pin holes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.120-123
• /
• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_1^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_1^d$ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{Se}-V_{Zn})-V_{Zn}$.

• Journal of the Korean Society of Systems Engineering
• /
• v.19 no.2
• /
• pp.135-144
• /
• 2023

Artificial Intelligence (AI) is a prominent topic in almost every field. In Korea, Systems Engineering (SE) procedures are applied in Defense Acquisition, and it is anticipated that SE procedures will also be applied to systems incorporating AI capabilities. This study explores the applicability of the concepts "AI4SE (AI for SE)" and "SE4AI (SE for AI)," which have been proposed in the United States, to the Korean context. The research examines the feasibility of applying these concepts, identifies necessary tasks, and proposes implementation strategies. For the AI4SE, many attempts and studies applying AI to SE Processes both Requirements & Architectures Define, System implementation & V&V, and Sustainment. It needs Explainability and Security. For the SE4AI, the Functional AI implementation level, Quality & Security of the Data-set, AI Ethics, and Review policies are needed. Furthermore, it provides perspectives on how these two concepts should ultimately converge and suggests future directions for development.

• Preventive Nutrition and Food Science
• /
• v.14 no.2
• /
• pp.142-147
• /
• 2009

In this study, the selenium (Se) accumulations of soybean sprouts and mungbean sprouts treated with various concentrations of Se-solutions were evaluated, as part of a broader effort to produce Se-enriched variants of the plants. Four levels of sodium selenate ($Na_{2}SeO_{4}$)-dissolved solutions (i.e. 0, T0; 6, T1; 60, T2; and $600{\mu}g/mL$, T3) were prepared and sprayed onto the plants during cultivation. The effect of different spraying periods on Se accumulation was also assessed by watering plant groups once a day for periods of one, two, or three days. Se solution remaining on the surfaces of the plants was washed out by spraying with distilled water on the final day of cultivation. However, the increase of Se accumulation in the plants was found to depend on both Se-concentration and watering period, and the soybean sprouts were determined to accumulate Se more effectively than the mungbean sprouts. Additionally, with regard to Se accumulation in the plants, the period of application of Se solution was determined to be more important than the concentration of the Se solution applied. The averaged total levels of Se-enrichment in whole soybean sprouts at T0, T1, T2, and T3 were 0.26, 65.86, 179.62, and $525.12{\mu}g/dry$ matter (DM) g, respectively, and the relative equations relating Se enrichment in soybean sprouts (Y) against watering days (X) were Y=32.505X-36.17 (T1), Y=88.46X-92.04 (T2), and Y=251.11X-254.9(T3). The averaged total levels of Se-enrichment in the whole mungbean sprouts at T1, T2, and T3 group were 0.05, 3.64, and $101.43{\mu}g/DM$ g, respectively, and the relative equations relating Se enrichment (Y) to watering days (X) for mungbean sprouts were Y=1.67X-1.3467 at T1 and Y=48.035X-46.907 at T2. The results of this study suggest that soybean sprouts and mungbean sprouts enriched with bioavailable Se can be produced on a large scale by Se supplementation, allowing for the development of healthy functional foods such as Se-enriched mungbean sprout soups and salads, Se-enriched functional drink and food additives, and selenium tablets to promote health.

• Journal of the Korean Vacuum Society
• /
• v.2 no.2
• /
• pp.236-245
• /
• 1993

Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.

• Journal of the Korean Vacuum Society
• /
• v.10 no.2
• /
• pp.252-256
• /
• 2001

We performed spectroscopic ellipsometry measurement to obtain dielectric function(DF) of ZnSe at room temperature. Proper wet chemical etching procedure was carried out to remove overlayers on top of ZnSe, and our result indicates that the previous reports on the pure DF of ZnSe have inaccurate interpretations. We constructed DF of oxide on ZnSe by using reported DFs of amorphous-Se, $GaAsO_3$, and voids through Bruggeman effective-medium approximation.

• Journal of Powder Materials
• /
• v.19 no.6
• /
• pp.442-445
• /
• 2012

The quantum dots (QD) have unique electrical and optical properties due to quantum dot confinement effect. The optical properties of QDs are decided by various synthesis conditions. In a prior QDs study, a study on the QDs size with synthesis condition such as synthesis time and temperature is being extensively researched. However, the research on QDs size with composition ratio has hitherto received scant attention. In order to evaluate the ratio dependence of CdSe crystal, synthesis ratio of Se precursor is changed from 16.7 mol%Se to 44 mol%Se. As the increasing Se ratio, the band gap was increased. This is caused by red shift of emission. We confirmed optical property of CdSe QDs with composition ratio.