• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.84-84
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I$_2$ (D$^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3meV The exciton peak, lid, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The I$_1$$\^$d/ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a (V$\sub$se/ - V$\sub$zn/) - V$\sub$zn-/

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.134-137
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• 2009

Commercially available elemental powders of Cu, Zn, Sn and Se were employed for crystallizing a stannite-type $Cu_2ZnSnSe_4$ compound by means of solid state reaction. $Cu_2ZnSnSe_4$ reaction chemistry was also modeled based on differential-thermal analysis and X-ray powder diffraction results. It was observed that Se tends to react preferably with Cu to form CuSe and $CuSe_2$ phases at low reaction temperature. The formation of $Cu_5Zn_8$ intermetallic phase was found to be the intermediate reaction path for the binary ZnSe formation. A solid state reaction at $320^{\circ}C$ reacted elemental powderst obinary selenides of CuSe, ZnSe and SnSe completely. The crystallization of $Cu_2ZnSnSe_4$ was was detected to begin at $300^{\circ}C$ and its weight fraction increased with an increase of reaction temperature, which most probably formed from the reaction between $Cu_2SnSe_3$ and ZnSe.

• 한국결정성장학회지
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• 제13권3호
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• pp.105-110
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_{2}$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV, The exciton peak, $I_{1}^{d}$ at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_{1}^{d}$ peak was dominantly observed in the ZnSe/GaAs : Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs : Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{se}-V_{zn})-V_{zn}$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1437-1439
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• 1996

In this paper, investigations on a three stage processing technique involving the co-evaporation of In-Se, Cu-Se and In-Se in this order at different deposition condition was undertaken. At first stage, we obtained good $In_{2}Se_{3}$ films by In-Se coevaporation. $In_{2}Se_{3}$ films show smooth and dense structure. And ration of In:Se was 2:3 $CulnSe_2$ thin films deposited by three stage process have shown strong adhesion on Mo coated glass substrates and good morphological properties suitable device fabrication. XWD spectra show single phase chalcopyrite $CulnSe_2$ films with strong orientation in the 112 plane. Resistivity of $CulnSe_2$ thin films was about $5{\times}10^{5}\;{\Omega}{\cdot}cm$. Surface morphology of CdS/$CulnSe_2$/Mo films was very good because of no pin holes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.120-123
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_1^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_1^d$ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{Se}-V_{Zn})-V_{Zn}$.

• 시스템엔지니어링학술지
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• 제19권2호
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• pp.135-144
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• 2023

Artificial Intelligence (AI) is a prominent topic in almost every field. In Korea, Systems Engineering (SE) procedures are applied in Defense Acquisition, and it is anticipated that SE procedures will also be applied to systems incorporating AI capabilities. This study explores the applicability of the concepts "AI4SE (AI for SE)" and "SE4AI (SE for AI)," which have been proposed in the United States, to the Korean context. The research examines the feasibility of applying these concepts, identifies necessary tasks, and proposes implementation strategies. For the AI4SE, many attempts and studies applying AI to SE Processes both Requirements & Architectures Define, System implementation & V&V, and Sustainment. It needs Explainability and Security. For the SE4AI, the Functional AI implementation level, Quality & Security of the Data-set, AI Ethics, and Review policies are needed. Furthermore, it provides perspectives on how these two concepts should ultimately converge and suggests future directions for development.

• Preventive Nutrition and Food Science
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• 제14권2호
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• pp.142-147
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• 2009

In this study, the selenium (Se) accumulations of soybean sprouts and mungbean sprouts treated with various concentrations of Se-solutions were evaluated, as part of a broader effort to produce Se-enriched variants of the plants. Four levels of sodium selenate ($Na_{2}SeO_{4}$)-dissolved solutions (i.e. 0, T0; 6, T1; 60, T2; and $600{\mu}g/mL$, T3) were prepared and sprayed onto the plants during cultivation. The effect of different spraying periods on Se accumulation was also assessed by watering plant groups once a day for periods of one, two, or three days. Se solution remaining on the surfaces of the plants was washed out by spraying with distilled water on the final day of cultivation. However, the increase of Se accumulation in the plants was found to depend on both Se-concentration and watering period, and the soybean sprouts were determined to accumulate Se more effectively than the mungbean sprouts. Additionally, with regard to Se accumulation in the plants, the period of application of Se solution was determined to be more important than the concentration of the Se solution applied. The averaged total levels of Se-enrichment in whole soybean sprouts at T0, T1, T2, and T3 were 0.26, 65.86, 179.62, and $525.12{\mu}g/dry$ matter (DM) g, respectively, and the relative equations relating Se enrichment in soybean sprouts (Y) against watering days (X) were Y=32.505X-36.17 (T1), Y=88.46X-92.04 (T2), and Y=251.11X-254.9(T3). The averaged total levels of Se-enrichment in the whole mungbean sprouts at T1, T2, and T3 group were 0.05, 3.64, and $101.43{\mu}g/DM$ g, respectively, and the relative equations relating Se enrichment (Y) to watering days (X) for mungbean sprouts were Y=1.67X-1.3467 at T1 and Y=48.035X-46.907 at T2. The results of this study suggest that soybean sprouts and mungbean sprouts enriched with bioavailable Se can be produced on a large scale by Se supplementation, allowing for the development of healthy functional foods such as Se-enriched mungbean sprout soups and salads, Se-enriched functional drink and food additives, and selenium tablets to promote health.

• 한국진공학회지
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• 제2권2호
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• pp.236-245
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• 1993

SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, $1{\times}10^{-6}mmHg$의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이었고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순문(V, Cr, Ni)은 모결정의 $T_d$ 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak가 나타난다.

• 한국진공학회지
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• 제10권2호
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• pp.252-256
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• 2001

분광타원법을 이용하여 상온에서 ZnSe의 유전율 함수를 측정하였다. 순수한 ZnSe의 유전율 함수를 얻기 위해서 적절한 화학적인 식각법을 행함으로써 시료표면의 산화막을 제거하였고, 그 결과 이전에 보고된 것보다 더 좋은 결과를 얻을 수 있었으며, 또한 이전의 산화막 제거 방법에 문제가 있었음을 알 수 있었다. 산화막을 제거하기 전의 유사 유전율 함수와 그것을 수행한 후의 유전율 함수에 대해 브루그먼 유효매질 어림이론을 사용하여 비정질 Se, $GaAsO_3$, void 등의 물질을 조합함으로써 ZnSe 자연 산화막의 유전율 함수를 결정하였다.

• 한국분말재료학회지
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• 제19권6호
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• pp.442-445
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• 2012

The quantum dots (QD) have unique electrical and optical properties due to quantum dot confinement effect. The optical properties of QDs are decided by various synthesis conditions. In a prior QDs study, a study on the QDs size with synthesis condition such as synthesis time and temperature is being extensively researched. However, the research on QDs size with composition ratio has hitherto received scant attention. In order to evaluate the ratio dependence of CdSe crystal, synthesis ratio of Se precursor is changed from 16.7 mol%Se to 44 mol%Se. As the increasing Se ratio, the band gap was increased. This is caused by red shift of emission. We confirmed optical property of CdSe QDs with composition ratio.