• Title/Summary/Keyword: Screen-printed Ag

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Electrochemical Detection of Uric Acid using Three Osmium Hydrogels (세개의 오스뮴 고분자를 이용한 요산의 전기화학적 측정방법)

  • Jeon, Won-Yong;Choi, Young-Bong
    • Journal of the Korean Electrochemical Society
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    • v.19 no.2
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    • pp.29-38
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    • 2016
  • Screen printed carbon electrodes (SPCEs) with immobilized osmium-based hydrogel redox polymer, uricase and PEGDGE can be used to apply uric acid electrochemical detecting. The osmium redox complexes were synthesized by the coordinating pyridine group having different functional group at 4-position with osmium compounds. The synthesized poly-osmium hydrogel complexes are described as PAA-PVI-$[Os(dCl-bpy)_2Cl]^{+/2+}$, PAA-PVI-$[Os(dme-bpy)_2Cl]^{+/2+}$, PAA-PVI-$[Os(dmo-bpy)_2Cl]^{+/2+}$. The different concentrations of uric acid were measured by cyclic voltammetry technique using enzyme-immobilized SPCEs. The prepared SPCEs using PAA-PVI-$[Os(dme-bpy)_2Cl]^{+/2+}$ showed no interference from common physiologic interferents such as ascorbic acid (AA) or glucose. The resulting electrical currents at 0.33 V vs. Ag/AgCl displayed a good linear response with uric acid concentrations from 1.0 to 5.0 mM. Therefore, this approach allowed the development of a simple, point of care in the medical field, disposable electrochemical uric acid biosensor.

Energy Harvesting Characteristics of Interdigitated (IDT) Electrode Pattern Embedded Piezoelectric Energy Harvester (IDT 전극 패턴 임베디드 압전 에너지 하베스터의 특성)

  • Lee, Min-seon;Kim, Chang-Il;Yun, Ji-sun;Park, Woon Ik;Hong, Youn-Woo;Paik, Jong Hoo;Cho, Jeong Ho;Park, Yong-Ho;Jang, Yong-Ho;Choi, Beom-Jin;Jeong, Young-Hun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.9
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    • pp.581-588
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    • 2016
  • Piezoelectric thick films of a soft $Pb(Zr,Ti)O_3$ (PZT) based commercial material were produced by a conventional tape casting method. Thereafter, the interdigitated (IDT) Ag-Pd electrode pattern was printed on the $25{\mu}m$ thick piezoelectric film at room temperature. Co-firing of the 10-layer laminated piezoelectric thick films was conducted at $1,100^{\circ}C$ and $1,150^{\circ}C$ for 1 h, respectively. Piezoelectric cantilever energy harvesters were successfully fabricated using the IDT electrode pattern embedded piezoelectric laminates for 3-3 operation mode. Their energy harvesting characteristics were investigated with an excitation of 120 Hz and 1 g under various resistive loads (ranging from $10k{\Omega}$ to $200k{\Omega}$). A parabolic increase of voltage and a linear decrease of current were shown with an increase of resistive load for all the energy harvesters. In particular, a high output power of 3.64 mW at $100k{\Omega}$ was obtained from the energy harvester (sintered at $1,150^{\circ}C$).

A Review on TOPCon Solar Cell Technology

  • Yousuf, Hasnain;Khokhar, Muhammad Quddamah;Chowdhury, Sanchari;Pham, Duy Phong;Kim, Youngkuk;Ju, Minkyu;Cho, Younghyun;Cho, Eun-Chel;Yi, Junsin
    • Current Photovoltaic Research
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    • v.9 no.3
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    • pp.75-83
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    • 2021
  • The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si2O, Si2O3) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (Voc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiOx/n+-poly-Si/SiNx:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents Jo of this structure on polished surface is 1.3 fA/cm2 and for textured silicon surfaces is 3.7 fA/cm2 before printing the silver contacts. After printing the Ag contacts, the Jo of this structure increases to 50.7 fA/cm2 on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.