• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.139-139
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• 2010

LSM is widely used as a cathode material in SOFC, because of its high electrochemical activity, good stability and compatibility with YSZ electrolyte at high temperature. However, LSM in traditional cathode materials will not generate a satisfactory performance at intermediate temperature. In order to reduce the polarization resistance of cell with the operating temperature of SOFC system, the cathode material of LSCF is one of the most suitable electrode materials because of its high mixed ionic and electronic conductivity. In this report, cathode material, $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3$ powder for intermediate temperature SOFC was synthesized by Pechini method using the starting materials such as nitrate of La, Sr, Co and Fe including ethylene glycol, etc. As a result, the synthesized powder that calcined above $700^{\circ}C$ exhibits successfully perovskite structure, indicating phase-pure of LSCF. Moreover, the particle size, surface area, crystal structure and morphology of the synthesized oxide powders were characterized by SEM, XRD, and BET, etc. In order to evaluate the electrochemical performance for the synthesized powder, slury mixture using the synthesized cathode material was coated by screen-printing process on the anode-supported electrolyte which was prepared by a tape casting method and co-sintering. Finally, electrochemical studies of the SOFC unit cell, including measurements such as power density and impedance, were performed.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.91.1-91.1
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• 2010

There are some methods for increasing efficiency of crystalline silicon solar cells. Among them, It is important to reduce the recombination loss of surface for high efficiency. In order to reduce recombination loss is a way to use the BSF(Back Surface Field). The BSF on the back of the p-type wafer forms a p+layer. so, it is prevented to act electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. therefore, open-circuit-voltage and Fill factor(FF) of solar cells are increased. This paper investigates the formation of rear contact process comparing Aluminum-paste(Al-paste) with Aluminum-Metal(99.9%). It is shown that the Aluminum-Metal provides high conductivity and low contact resistance of $21.35m{\Omega}cm$ using the Vacuum evaporation process but, it is difficult to apply the standard industrial process because high Vacuum is needed and it costs a tremendous amount more than Al-paste. On the other hand, using the Al-paste process by screen printing is simple for formation of metal contact and it is possible to produce the standard industrial process. however, it is lower than Aluminum-Metal(99.9) of conductivity because of including mass glass frit. In this study, contact resistances were measured by 4-point prove. each of contact resistances is $21.35m{\Omega}cm$ of Aluminum-Metal and $0.69m{\Omega}cm$ of Al-paste. and then rear contact have been analyzed by Scanning Electron Microscopy(SEM).

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.71-76
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• 2012

A chip interconnection technology for smart fabrics was investigated by using flip-chip bonding of SnBi low-temperature solder. A fabric substrate with a Cu leadframe could be successfully fabricated with transferring a Cu leadframe from a carrier film to a fabric by hot-pressing at $130^{\circ}C$. A chip specimen with SnBi solder bumps was formed by screen printing of SnBi solder paste and was connected to the Cu leadframe of the fabric substrate by flip-chip bonding at $180^{\circ}C$ for 60 sec. The average contact resistance of the SnBi flip-chip joint of the smart fabric was measured as $9m{\Omega}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.160-160
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• 2016

In this study, we applied the low temperature curing Ag paste to replace PVD System. The electrode formation of low temperature curing Ag paste for silicon Hetero-junction solar cells is important for improving device characteristics such as adhesion, contact resistance, fill factor and conversion efficiency. The low temperature curing Ag paste is composed various additives such as solvent, various organic materials, polymer, and binder. it depends on the curing temperature conditions. The adhesion of the low temperature curing Ag paste was decided by scratch test. The specific contact resistance was measured using the transmission line method. All of the Ag electrodes were experimented at various curing temperatures within the temperature range of $160^{\circ}C-240^{\circ}C$, at $20^{\circ}C$ intervals. The curing time was also changed by varying the conditions of 10-50min. In the optimum curing temperature $200^{\circ}C$ and for 20 min, the measured contact resistance is $19.61m{\Omega}cm^2$. Over temperature $240^{\circ}C$, confirmed bad contact characteristic. We obtained photovoltaic parameter of the industrial size such as Fill Factor (FF), current density (Jsc), open-circuit voltage (Voc) and convert efficiency of up to 76.2%, 38.1 mA/cm2, 646 mV and 18.3%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.55-61
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• 2002

Ultra-fine particles of $SnO_{2}$ was synthersized by the sol-gel powder processing using tin(II) chloride dihydrate$(SnCl_{2}{\cdot}2H_{2}O)$ and ethanol$(C_{2}H_{5}OH)$ as raw materials. Gel powders can be obtained by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_{2}$ phase was increased with temperature because of the evaporation of volatile components, and the creation of $SnO_{2}$ phase was almost done by the heat treatment at $700^{\circ}C/30min$ The grain sizes after firing are about 20-30nm, and it showed the narrow distribution of grain size. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_{2}$ was increased with temperature up to $380^{\circ}C$ by the typical conduction mechanism of semiconducting ceramics. There was a region of constant conductance between about $200^{\circ}C$ and $380^{\circ}C$ due to the increment of electron concentration with temperature and the annihilation of conduction carriers by the absorption and electron trapped-ionization of oxygen on the surface of $SnO_{2}$, It was finally showed the intrinsic behaviors above $450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.43 no.2 s.308
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• pp.48-56
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• 2006

This paper introduces design and implementation of digital photo kiosk system, digital photo printing system, with auto color correction module that considers gamut between touch screen and output device, digital photo printer, to provide user-preferred media. This module performs media correction function to service high quality contents for image captured by digital camera and mobile phone camera. Since it is implemented as LUT for real-time processing, the system offers one-touch interface to user. As a result of implementation, this kiosk system provides user-favorite photo because of black and white mode, sepia mode, and brightness and contrast adjustment. Also it can gives smooth tone transition and photos of similar color to captured image due to auto color correction module.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.988-993
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• 2002

Electrochemical cells for decomposing $NO_x$ were fabricated using a hydrothermally synthesized lanthanum stannate pyrochlore catalyst. Thick film of the catalyst on the YSZ electrolyte disk was produced by screen-printing a paste consisted of $La_2Sn_2O_7$ and YSZ powders. Direct current was applied to the electrochemical cell to promote an electrochemical catalytic decomposition of $NO_x$. $NO_x$ decomposition behavior of the rectant gas mixture ($NO_x$ 0.1%, $O_2$ 2%) was investigated at 700${\circ}C$ under atmosphere pressure using on-line gas chromatography and $NO_x$ analyzer. It was observed that microstructure of the catalyst layer significantly influences the electrocatalystic decomposition of $NO_x$.

• Journal of Hydrogen and New Energy
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• v.21 no.6
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• pp.533-539
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• 2010

Ni-YSZ supported button cells were prepared by spray-coating YSZ and screen-printing YSZ-LSM powder as an electrolyte and oxygen electrode on Ni-YSZ cermet disks. In order to identify the polarization loss mechanism in high temperature electrolysis current-voltage characteristics coupled with electrochemical impedance spectroscopy were investigated as a function of temperature, current load, and the humidity. The effects of the different current collectors of platinum and silver for oxygen electrodes were compared. With Ag current collector two polarization losses were distinguished. The high frequency component was attributed to the Ni-YSZ cermet which was less susceptible to temperature variation but increasing in loss with humidity. The lower frequency component was attributed to the LSM electrode. Platinum current collector led to a much lower polarization loss.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.21-27
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• 1996

Thick film $TiO_{2}/WO_{3}$ butane gas sensors were fabricated by the screen printing method and their gas sensing characteristics were investigated. The sensitivity of $TiO_{2}/WO_{3}$ thick film was higher than that of pure $WO_{3}$ film to butane. The $WO_{3}$ film with 2wt.% $TiO_{2}$ showed the highest sensitivity to butane. And the optimum heat treatment temperature was $650^{\circ}C$. That film showed the highest sensitivity to butane at the operating temperature of $350^{\circ}C$. The sensitivity of the film to 20000ppm butane in air was 80% at the operating temperature of $350^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.54-62
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• 2009

${Co_3}{O_4}$ and ${Co_3}{O_4}$-based thick films with additives such as ${Co_3}{O_4}-{Fe_2}{O_3}$(5 wt.%), ${Co_3}{O_4}-{SnO_2}$ (5 wt.%), ${Co_3}{O_4}-{WO_3}$(5 wt.%) and ${Co_3}{O_4}$-ZnO(5 wt.%) were fabricated by screen printing method on alumina substrates. Their structural properties were examined by XRD and SEM. The sensitivities to iso-${C_4}H_{10}$, $CH_4$, CO, $NH_3$ and NO gases were investigated with the thick films heat treated at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. From the gas sensing properties of the films, the films showed p-type semiconductor behaviors. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed higher sensitivity to i-${C_4}H_{10}$ and CO gases than other thick-films. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed the sensitivity of 170 % to 3000 ppm iso-${C_4}H_{10}$ gas and 100 % to 100 ppm CO gas at the working temperature of $250^{\circ}C$. The response time to i-${C_4}H_{10}$ and CO gases showed rise time of about 10 seconds and fall time of about $3{\sim}4$ minutes. The selectivity to i-${C_4}H_{10}$ and CO gases was enhanced in the ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film.