• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.41-46
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• 2002

In this work, we studied electrical characteristics and leakage current mechanism of Au/$Ta_2O_5$/Si metal-oxide-semiconductor (MOS) devices. $Ta_2O_5$ thin film (63nm) was deposited by atomic layer deposition (ALD) method at temperature of $235^{\circ}C$. The structures of the $Ta_2O_5$ thin films were examined by X-Ray Diffraction (XRD). From XRD, the structure of $Ta_2O_5$ was single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current-voltage (I-V) characteristics of $Ta_2O_5$ thin film was studied from 300 to 423 K. In ohmic region (<0.5 MVcm${-1}$), the resistivity was $2.4056{\times}10^{14}({\Omega}cm)$ at 348 K. The Schottky emission is dominant in lower temperature range from 300 to 323 K and Poole-Frenkel emission dominant in higher temperature range from 348 to 423 K.