• International Journal of Precision Engineering and Manufacturing
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• v.4 no.5
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• pp.41-46
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• 2003

Electronic Speckle Pattern Interferometry (ESPI) has been recently developed and widely used because it has the advantage of being able to measure surface deformations of engineering components and materials in industrial areas without contact. The speckle patterns formed with interference and scattering phenomena can measure not only the out-of-plane but also the in-plane deformations. Digital image equipment processes the information included in the speckle patterns and displays the consequent interferogram on a computer monitor. In this study, the experimental results of a canti-levered plate using ESPI were compared with those obtained from the simple beam theory. The ESPI results of the canti-levered plate, analyzed by 4-step phase shifting method, are close to the theoretical expectation. Similarly, out-of-plane displacements of a spot welded canti-levered plate were also measured by ESPI with 4-step phase shifting technique. The phase map of the spot welded canti-levered plate is quite different from that of the canti-levered plate without spot welding.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.05a
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• pp.69-73
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• 2005

The arc dispersion and contacts characteristics were analyzed according to switching off Residual Current Protective Device(RCD) switch. Arc dispersion process was taken by high speed imaging system at a rate of 10,000 frames per second. When RCD was switched from on to off, art was observed and it took about 2.3[ms] from the generation of arc to the extinction of arc. When RCD was switched from off to on, arc was not observed. We repeated switching on and off 1000, 3000 and 6000 times. After repetition, the surface characteristics of contacts were taken by stereo microscope and Scanning Electron Microscope(SEM). From the scattering patterns analysis of arc and the analysis of deteriorated contacts, it could be applicable to the research of electric fire and arc suppression.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.629-629
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• 2013

Graphene is a carbon based material and it has intriguing features, such as phenomenally strong, thin, flexible, transparent and conductive, those make it attractive for a broad range of applications.Unfortunately, graphene is extremely sensitive to contamination. When we fabricate graphene devices, electrical properties of graphene are altered [1], and the charge carrier mobility drops accordingly by orders of magnitude. This significant impact on electron mobility occurs because any surrounding medium could act as a dominant source of extrinsic scattering, which effectively reduces the mean free path of carriers [2,3]. The dominant contaminant is generated through fabrication stage by polymethyl methacrylate (PMMA) [4], or photo resist (PR). Surface contamination by these residues has long been a critical problem in probing graphene's intrinsic properties. If we clearly solve this problem, we can get highly performed graphene devices. Here, we will report on graphene cleaning process by Induced Coupled Plasma (ICP). We demonstrated how much decomposition of residue impact on improving electrical properties of graphene.

• Journal of Powder Materials
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• v.24 no.3
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• pp.216-222
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• 2017

Synthesized monocrystalline nanodiamond (nD) particles are heat-treated at various temperatures to produce highly structured diamond crystals. The heat-treated nDs show different weight loss ratios during thermogravimetric analysis. The crystallinities of the heat-treated nDs are analyzed using Raman spectroscopy. The average particle sizes of the heat-treated nDs are measured by a dynamic light scattering (DLS) system and direct imaging observation methods. Moreover, individual dispersion behaviors of the heat-treated nD particles are investigated based on ultrasonic dispersion methods. The average particle sizes of the dispersed nDs according to the two different measurement methods show very similar size distributions. Thus, it is possible to produce highly crystallized nD powder particles by a heat-treatment process, and the nD particles are relatively easy to disperse individually without any dispersant. The heat-treated nDs can lead to potential applications such as in nanocomposites, quantum dots, and biomedical materials.

• Journal of Astronomy and Space Sciences
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• v.15 no.1
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• pp.175-182
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• 1998

Any classification process using SAR images presupposes the reduction of multiplicative speckle noise, since the variations caused by speckle make it extremely difficult to distinguish between neighboring classes within the feature space. Therefore, several adaptive filter algorithms have been developed in order to distinguish between them. These algorithms aim at the preservation of edges and single scattering peaks, and smooths homogeneous areas as much as possible. This task is rendered more difficult by the multiplicative nature of the speckle noise the signal variation depends on the signal itself. In this paper, LEE(Lee 1908) and R-LEE(Lee 1981) filters using local statistics, local mean and variance, are applied to RADARSAT SAR images. Also, a new method of speckle filtering, EPOS(Edge Preserving Optimal Speckle)(Hagg & Sties 1994) filter based on the statistical properties of speckle noise is described and applied. And then, the results of filtering SAR images with LEE, R-LEE and EPOS filters are compared with mean and median filters.

• Proceedings of the KSRS Conference
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• 2004.10a
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• pp.397-400
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• 2004

Synthetic Aperture Radar(SAR) is an active micro­wave instrument that performs high-resolution observation under almost all weather conditions. Although there are many advantages of SAR instrument, many complicated steps are involved in order to generate SAR image products. Many research and algorithms have been proposed to process radar signal and to increase the quality of SAR products. However, it is hard to find research which compare the quality of SAR products generated with different algorithms and processing methods. In our previous research, a SAR processing s/w was developed for a ground station. In addition, quality assessment procedures and their test parameters inside a SAR processor was proposed. The purpose of this paper is to evaluate the quality of SAR images generated from the developed SAR processing s/w. However, If there are no direct measurements such as radar reflector or scattering field measurement values it is difficult to compare SAR images generated with different methods. An alternative procedures and parameters for SAR image quality evaluation are presented and the problems involved in the comparison methods are discussed. Experiments based on real data have been conducted to evaluate and analyze quality of SAR images.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.529-532
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• 2006

Sn-filled $Co_8Sb_{24}$ skutterudites were synthesized by the encapsulated induction melting process. Single ${\delta}-phase$ was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conductivity of the Sn-filled $Co_8Sb_{24}$. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled $Co_8Sb_{24}$ skutterudite is a highly degenerate semiconductor. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be $z{\leq}0.5$ in the $Sn_zCo_8Sb_{24}$ system.

• Journal of the Korean Magnetics Society
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• v.17 no.5
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• pp.210-214
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• 2007

Recent years have seen a rapid development of spintronics. One of the major achievements of this field is the understanding of spin dependent process in various physical systems, for example, metallic multilayers showing the giant magnetoresistance (GMR). Today devices based on the GMR are revolutionizing electronic data storage. In this paper, we review recent developments in the research on GMR of low dimensional structures. We describe the magnetoresistance properties of magnetic multilayers, multilayered nanowires and nonopillars, etc.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.454-461
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• 2015

Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.199-205
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• 2006

Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.