• 제목/요약/키워드: Scattering process

검색결과 434건 처리시간 0.029초

[Retraction]Size measurement and characterization of ceria nanoparticles using asymmetrical flow field-flow fractionation (AsFlFFF)

  • Kim, Kihyun;Choi, Seong-Ho;Lee, Seungho;Kim, Woonjung
    • 분석과학
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    • 제32권5호
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    • pp.173-184
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    • 2019
  • As the size of semiconductors becomes smaller, it is necessary to perform high precision polishing of nanoscale. Ceria, which is generally used as an abrasive, is widely used because of its uniform quality, but its stability is not high because it has a high molecular weight and causes agglomeration and rapid precipitation. Such agglomeration and precipitation causes scratches in the polishing process. Therefore, it is important to accurately analyze the size distribution of ceria particles. In this study, a study was conducted to select dispersants useful for preventing coagulation and sedimentation of ceria. First, a dispersant was synthesized and a ceria slurry was prepared. The defoamer selection experiment was performed in order to remove the air bubbles which may occur in the production of ceria slurry. Dynamic light scattering (DLS) and asymmetrical flow field-flow fractionation (AsFlFFF) were used to determine the size distribution of ceria particles in the slurry. AsFlFFF is a technique for separating nanoparticles based on sequential elution of samples as in chromatography, and is a useful technique for determining the particle size distribution of nanoparticle samples. AsFlFFF was able to confirm the presence of a little quantities of large particles in the vicinity of 300 nm, which DLS can not detect, besides the main distribution in the range of 60-80 nm. AsFlFFF showed better accuracy and precision than DLS for particle size analysis of a little quantities of large particles such as ceria slurry treated in this study.

CNN 모델을 활용한 항공기 ISAR 영상 데이터베이스 구축에 관한 연구 (A Study on the Establishment of ISAR Image Database Using Convolution Neural Networks Model)

  • 정승호;하용훈
    • 한국시뮬레이션학회논문지
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    • 제29권4호
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    • pp.21-31
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    • 2020
  • 비협조적 표적식별(NCTR, Non-Cooperative Target Recognition)은 전자정보 등 다른 체계의 지원 없이 레이다 자체적으로 표적을 식별하는 기능을 말한다. 이를 구현하기 위한 대표적인 방법 중 하나인 역합성개구레이다(ISAR) 영상은 표적의 기동 및 위치에 따라 크게 변하기 때문에 기종을 판단할 수 있는 데이터베이스 없이 이를 자동으로 식별하기란 매우 어렵다. 본 연구에서는 실측 영상이 부족한 상황에서도 ISAR 영상 시뮬레이션 및 딥러닝 기법을 활용한 식별 데이터베이스 구축방안에 대해 논한다. 다양한 레이다 운용 환경에 따라 변화하는 ISAR 영상을 모사하기 위해 '완전 산란체', '결손 산란체', 'JEM 잡음'으로 명명한 영상 형성 과정을 거쳐 이를 학습하는 모델을 제안한다. 이 모델의 학습 결과를 통해 유사한 형상의 시뮬레이션 영상은 물론 처음 입력된 실측 ISAR 영상도 식별할 수 있음을 확인하였다.

잉크젯 프린팅 방식으로 형성된 구리 배선의 전기적 특성 평가 (Electrical Characteristics of Copper Circuit using Inkjet Printing)

  • 김광석;구자명;정재우;김병성;정승부
    • 마이크로전자및패키징학회지
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    • 제17권3호
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    • pp.43-49
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    • 2010
  • 직접인쇄기술 방식은 기존의 포토리소그래피 방법을 이용한 패터닝 기술에 비해 저비용, 간단한 공정 과정, 친환경성 등 여러 장점들로 인해 미세 회로 형성 분야의 그린 테크놀로지로 최근 각광받고 있다. 이러한 프린팅 기반의 전자기술을 상용화하기 위해서는 프린팅 방식으로 형성된 회로의 전기적 특성 평가가 필수적인데, 이에 본 연구에서는 구리 잉크를 이용하여 잉크젯 프린팅 방식으로 2 가지 타입, parallel transmission line(PTL)과 coplanar waveguide(CPW) 구조의 회로를 형성하고 $250^{\circ}C$에서 30분 동안 소결하여 완성하였다. 전류-전압 그래프로 직류 저항을 측정하여 벌크 구리의 비저항 값의 약 3.3배되는 평균 0.558 ${\mu}{\Omega}{\cdot}cm$의 비저항 값을 도출하였고 회로의 고주파 특성 평가를 위해 주파수 범위 0~30 GHz에서 probe station chuck과 샘플 간의 갭 유무에 따른 scattering parameter를 측정하였다. 모든 시편에서 5 dB 이하의 반사 특성을 보였으며, PTL 회로가 CPW 구조보다 전반적으로 더 좋은 통과 특성을 나타내었다.

Structural and Electrical Features of Solution-Processed Li-doped ZnO Thin Film Transistor Post-Treated by Ambient Conditions

  • Kang, Tae-Sung;Koo, Jay-Hyun;Kim, Tae-Yoon;Hong, Jin-Pyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.242-242
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    • 2012
  • Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

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Topological phase transition according to internal strain in few layer Bi2Se3 thin film grown via a self-organized ordering process

  • 김태현;박한범;정광식;채재민;황수빈;조만호
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.272.1-272.1
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    • 2016
  • In a three-dimensional topological insulator Bi2Se3, a stress control for band gap manipulation was predicted but no systematic investigation has been performed yet due to the requirement of large external stress. We report herein on the strain-dependent results for Bi2Se3 films of various thicknesses that are grown via a self-organized ordering process. Using small angle X-ray scattering and Raman spectroscopy, the changes of d-spacings in the crystal structure and phonon vibration shifts resulted from stress are clearly observed when the film thickness is below ten quintuple layers. From the UV photoemission/inverse photoemission spectroscopy (UPS/IPES) results and ab initio calculations, significant changes of the Fermi level and band gap were observed. The deformed band structure also exhibits a Van Hove singularity at specific energies in the UV absorption experiment and ab initio calculations. Our results, including the synthesis of a strained ultrathin topological insulator, suggest a new direction for electronic and spintronic applications for the future.

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Short-duration Electron Precipitation Studied by Test Particle Simulation

  • Lee, Jaejin;Kim, Kyung-Chan;Lee, Jong-Gil
    • Journal of Astronomy and Space Sciences
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    • 제32권4호
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    • pp.317-325
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    • 2015
  • Energy spectra of electron microbursts from 170 keV to 340 keV have been measured by the solid-state detectors aboard the low-altitude (680 km) polar-orbiting Korean STSAT-1 (Science and Technology SATellite). These measurements have revealed two important characteristics unique to the microbursts: (1) They are produced by a fast-loss cone-filling process in which the interaction time for pitch-angle scattering is less than 50 ms and (2) The e-folding energy of the perpendicular component is larger than that of the parallel component, and the loss cone is not completely filled by electrons. To understand how wave-particle interactions could generate microbursts, we performed a test particle simulation and investigated how the waves scattered electron pitch angles within the timescale required for microburst precipitation. The application of rising-frequency whistler-mode waves to electrons of different energies moving in a dipole magnetic field showed that chorus magnetic wave fields, rather than electric fields, were the main cause of microburst events, which implied that microbursts could be produced by a quasi-adiabatic process. In addition, the simulation results showed that high-energy electrons could resonate with chorus waves at high magnetic latitudes where the loss cone was larger, which might explain the decreased e-folding energy of precipitated microbursts compared to that of trapped electrons.

연신에 따른 나일론 56 섬유의 결정 구조 및 수소결합 변화 (Evolution of Crystal Structure by Post-extension in Nylon 56 Fibers)

  • 조국현;조정형;김효정;이현휘
    • 한국염색가공학회지
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    • 제28권1호
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    • pp.33-39
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    • 2016
  • The crystal structure of nylon 56 fibers post extended by drawing process was investigated by synchrotron x-ray scattering measurement. In as-cast fiber, distinct (004) and (020) diffraction peaks were observed and they were related to initial metastable alignment of nylon molecules. With increase in the drawing ratio, (110) peak intensity was increased in vertical direction with decreasing (020) peak. At the same time, (004)' peak evolved position tilted to 29 degrees from the (004) peak. This evolution is directly related to stable crystalline phase of nylon 56 originated from additional formation of hydrogen bondings between N-H and C=O by post drawing process. We also compared density variation, stress-strain curves of the fiber as a function of drawing ratio and strain. The variations of density and tanacity also supported the increase of stable structure of nylon 56.

Analysis of Flat-Band-Voltage Dependent Breakdown Voltage for 10 nm Double Gate MOSFET

  • Jung, Hakkee;Dimitrijev, Sima
    • Journal of information and communication convergence engineering
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    • 제16권1호
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    • pp.43-47
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    • 2018
  • The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.

Behavior of Hydroxide Ions at the Water-Ice Surface by Low Energy Sputtering Method

  • Kim, S.Y.;Park, E.H.;Kang, H.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.338-338
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    • 2011
  • The behavior of hydroxide ions on water-ice films was studied by using $Cs^+$ reactive ion scattering (RIS), low energy sputtering (LES) and temperature-programmed desorption (TPD). A $Cs^+$ beam of a low kinetic energy (<100 eV) from $Cs^+$ ion gun was scattered at the film surface, and then $Cs^+$ projectiles pick up the neutral molecules on the surface as $Cs^+$-molecule clusters form (RIS process). In LES process, the preexisting ions on the surface are desorbed by the $Cs^+$ beam impact. The water-ice films made of a thick (>50 BL) $H_2$O layer and a thin $D_2O$ overlayer were controlled in temperatures 90~140K. We prepared hydroxide ions by using Na atoms which proceeded hydrolysis reaction either on the ice film surface or at the interface of the $H_2O$ and $D_2O$ layers.[1] The migration of hydroxide ions from the $H_2O/D_2O$ interface to the top of the film was examined as afunction of time. From this experiment, we show that hydroxide ions tend to reside at the water-ice surface. We also investigated the H/D exchange reactions of $H_2O$ and $D_2O$ molecules mediated by hydroxide ions to reveal the mechanism of migration of hydroxide to the ice surface.

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그래픽 전산모사를 이용한 차세대관리공정 원격운반취급 분석 (Analysis of Transportation and Handling System of Advanced Spent Fuel Management Process Using Graphic Simulator)

  • 홍동희;윤지섭;김성현;송태길;진재현
    • 한국방사성폐기물학회:학술대회논문집
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    • 한국방사성폐기물학회 2003년도 가을 학술논문집
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    • pp.431-437
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    • 2003
  • 본 연구에서는 공정운전에 필요한 물질 및 운전중 고장에 의한 유지보수를 위한 부품 등을 운반하고 취급 할 경우에 발생 할 수 있는 여러 문제점을 사전에 그래픽 시뮬레이터를 이용하여 검토하고, 공정운전의 핵심물질인 사용후핵연료 분말을 핫셀에 비산 시키지 않고 안전하게 운반 취급하는 방안과 취급에 필요한 장치를 도출하였다. 공정장치 및 유지보수 장비의 사전 검증은 일반적으로 실제 규모의 Mockup을 이용하지만 비용 및 시간적인 측면에서 제약을 받는 본 과제에서는 그래픽 시뮬레이션 기술을 활용하였다. 본 연구를 통하여 분석된 결과는 핫셀에 설치되는 실증장치의 설계에 반영하여 실증시험을 수행하면서 검증 할 예정이다.

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