• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.30-30
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• 2002

• Proceedings of the Korean Society of Life Science Conference
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• 2005.04a
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• pp.41-46
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.153-154
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• 2011

• Journal of IKEEE
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• v.22 no.2
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• pp.510-513
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• 2018

Recently, EMC (electromagnetic compatibility) becomes very important, which demands the measurement of EMI (electromagnetic interference) in the chip level. NFS (near-field scanning) systems defined in IEC 61967 and IEC 62508 are typical methods to analyze EMI in the chip level. As chips becomes faster, frequency measurement of NFS system should become wideband, but it degrades SNR (singal-to-noise ratio) of the NFP (near-field probe). This paper surveys SNR enhancement technologies of the NFS while maintaining wideband characteristics.

• International Journal of Precision Engineering and Manufacturing
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• v.9 no.4
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• pp.16-21
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• 2008

The demand for three-dimensional (3D) shape measurements is increasing in a variety of fields, including the manufacture of molds and dies. The most popular technology for 3D shape measurement is the coordinate measuring machine (CMM) with a contact trigger probe. Although a CMM provides a high degree of accuracy, it is inefficient due to its long measuring time. It also has difficulty measuring soft objects that can be deformed by the touch of the contact probe. In addition, a CMM cannot digitize areas that are difficult to reach, and cannot capture very minute details on the surface of complex parts. For these reasons, optical non-contact measurement techniques are receiving more attention since they eliminate most of the problems associated with contact methods. Laser scanning is emerging as one of the more promising non-contact measurement techniques. This paper describes various acquisition considerations for laser scanning, including the accuracy of the 3D scan data, which depends on the charge-coupled device (CCD) gain and noise. The CCD gain and noise of a 3D laser scanner are varied while keeping the other conditions constant, and the measurement results are compared to the dimensions of a standard model. The experimental results show that a considerable time savings and an optimum degree of accuracy are possible by selecting the proper CCD gain and noise.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.129-137
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• 2000

In this paper, a new method of noncontact measurement has been developed for a 3 dimensional topography in semiconductor wafer, implementing a new optical probe based on the precision defocus measurement. The developed technique consists of the new optical probe, precision stages, and the measurement/control system. The basic principle of the technique is to use the reflected slit beam from the specimen surface, and to measure the deviation of the specimen surface. The defocusing distance can be measured by the reflected slit beam, where the defocused image is measured by the proposed optical probe, giving very high resolution. The distance measuring formula has been proposed for the developed probe, using the laws of geometric optics. The precision calibration technique has been applied, giving about 10 nanometer resolution and 72 nanometer of four sigma uncertainty. In order to quantitize the micro pattern in the specimen surface, some efficient analysis algorithms have been developed to analyse the 3D topography pattern and some parameters of the surface. The developed system has been successfully applied to measure the wafer surface, demonstrating the line scanning feature and excellent 3 dimensional measurement capability.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.128-128
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• 2004

나노 스케일의 구조물 제작에 있어서 기존의 리소그래피 공정들이 가지는 한계점을 극복하기 위해서 다양한 방식의 새로운 공정들이 개발되고 있다. 특히, 기계-화학적 가공공정을 이용한 미세탐침 기반의 나노리소그래피 기술(Mechano-Chemical Scaning Probe based Lithography; MC-SPL)은 기존의 포토리소그래피 공정의 단점을 극복하고, 보다 경제적이며 패턴 디자인 변경이 유연한 미세 패턴 제작 기술임이 확인되었다.(중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.84-88
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• 2006

The effects of tip voltage, deflection setpoint, and tip velocity on height of $SiO_2$ line drawn by local anodization on Si wafer using scanning probe microscope were investigated. No local anodization was detected at smaller than -3 V of tip voltage. The line height increased at rate of 0.47 nm/V when the tip voltage is stronger than -3 V at $1{\mu}m/s$ tip velocity. From deflection setpoint, mechanical force between tip and substrate could be calculated and the threshold farce was $12\sim18nN$. The height of anodized $SiO_2$ lines is independent of the magnitude of force above the threshold force. The line height decreased as increasing the tip velocity and limited to 0.7 nm at -5 V tip voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.132-132
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• 2008

Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.