• Korean Chemical Engineering Research
• /
• 제60권1호
• /
• pp.62-69
• /
• 2022

그래핀은 부피에 비해 표면적이 넓고 뛰어난 기계적 물성과 전기전도성을 가지며 생체적합성이 우수하다. 본 연구에서는 전기화학적 방법을 이용하여 indium tin oxide (ITO) 글래스 슬라이드 표면에 산화그래핀을 증착·환원시킨 전극을 제작하였고 그래핀으로 표면 개질된 ITO의 전기화학적 특성을 조사하였다. 산화그래핀의 증착과 환원에 순환전압전류법을 사용하였다. 주사전자현미경과 에너지 분산형 X-선 분광법을 사용하여 그래핀이 코팅된 ITO 표면을 관찰하였다. 순환전압전류법과 전기화학 임피던스 분광법을 사용하여 제작된 전극들의 전기화학 특성을 평가하였다. 사이클 수와 주사 속도는 산화그래핀 증착과 환원도에 상당한 영향을 미쳤으며 제작된 전극의 전기화학 특성도 달랐다. ITO 전극에 비하여 그래핀으로 표면 개질된 ITO는 전극 계면에서의 전하 전달 저항이 낮았고 더 많은 전류를 생산하였다. 그래핀으로 표면 개질된 ITO 표면에 고정화된 포도당 산화효소는 포도당을 산화시키며 성공적으로 전자들을 생성하였다.

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2007년도 추계학술대회논문집
• /
• pp.714-717
• /
• 2007

In this study, a novel actuator was developed by employing the newly-synthesized ionic networking membrane (INM) of poly (styrene-alt-maleic anhydride) (PSMAn)-incorporated poly (vinylidene fluoride) (PVDF). Based on the same original membrane, various samples of INM actuator were prepared through different reduction times with the electroless-plating technique. The as-prepared INM actuators were tested in terms of surface resistance, platinum morphology, resonance frequency, tip displacement, current and blocked force, and their performance was compared to that of the widely-used traditional Nafion actuator. Scanning electron microscope (SEM) and transmission electron microscopy (TEM) revealed that much smaller and more uniform platinum particles were formed on the surfaces of the INM actuators as well as within their polymer matrix. Although excellent harmonic response was observed for the newly-developed INM actuators, this was found to be sensitive to the applied reduction times during the fabrication. The mechanical displacement of the INM actuator fabricated after optimum reduction times was much larger than that of its Nafion counterpart of comparable thickness under the stimulus of constant and alternating current voltage.

• 한국재료학회지
• /
• 제21권2호
• /
• pp.125-132
• /
• 2011

Fibrous chitosan membranes were fabricated as a substrate for skin applications using an electro-spinning process with different solvents and varying concentrations. Scanning electron microscopy (SEM) images confirmed that the formation of the chitosan fibrous membrane in trifluoroacetic acid was better than that in acetic acid. Fourier transform infrared spectroscopy showed that the chitosan fibers were cross-linked with glutaraldehyde, and that the cytotoxicity of the aldehyde groups was reduced by glycine and washing by NaOH and DI water. Chitosan cross-linked fibrous membranes were insoluble in water and could be washed thoroughly to wash away glycine and excess NaOH and prevent the infiltration of other water soluble bio-toxic agents using DI water. MTT assay method was employed to test the cytotoxicity of chitosan membranes during fabricating, treating and washing processes. After the dehydration of cell cultured chitosan membranes, cell attachment behavior on the material was evaluated using SEM method. Effect of the treatment processes on the biocompatibility of the chitosan membranes was shown by comparing of filopodium and lamellipodium of fibroblast cells on grown washed and unwashed chitosan fibrous membrane. The MTT assay and SEM morphology confirmed that the washed chitosan fibrous membrane increased cell attachment and cell growth, and decreased toxicity compared to results for the unwashed chitosan fibrous membrane.

• Membrane and Water Treatment
• /
• 제4권3호
• /
• pp.175-189
• /
• 2013

A membrane bioreactor (MBR) with sludge retention time (SRT) of 300 days was maintained for over 2 years. Polypropylene microfiltration (MF) membrane with pore size of 0.2 ${\mu}m$ was used in the MBR system. The fouling behaviors of various sludge fractions from the MBR were studied and sub-divided resistances were analyzed. It was observed that $R_{cp}$ was a dominant resistance during the filtration of activated sludge, contributing 63.0% and 59.6% to the total resistance for MBR and sequential batch reactor (SBR) respectively. On the other hand, $R_c$ played the significant role during the filtration of supernatant and solutes, varying between 54.54% and 67.18%. Compared with $R_{cp}$ and $R_c$, $R_{if}$ was negligible, and $R_m$ values remained constant at $0.20{\times}10^{12}m^{-1}$. Furthermore, resistances of all sludge fractions increased linearly with rising mixed liquor suspended solids (MLSS) concentration and growing trans-membrane pressure (TMP), while the relationship was inversed between fraction resistances and cross flow velocity (CFV). Among all fractions of activated sludge, suspended solid was the main contributor to the total resistance. A compact cake layer was clearly observed according to the field emission scanning electro microscopy (FE-SEM) images.

• 한국재료학회지
• /
• 제21권1호
• /
• pp.46-49
• /
• 2011

Bi co-doped ZnS:Mn,Bi yellow phosphors for white light emitting diodes were prepared by the conventional solidstate reaction method. The optical and structural properties of ZnS:Mn,Bi phosphors were investigated by x-ray diffraction, scanning electro microscopy and photoluminescence. ZnS:Mn,Bi phosphors showed XRD patterns of hexagonal structure. The photoluminescence of ZnS:Mn,Bi phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn,Bi phosphors was associated with the 4T1 ${\rightarrow}$ 6A1 transition of the Mn2+ ions. The highest photoluminescent intensity of the phosphors under 405 nm and 450 nm excitation was obtained at Bi concentration of 7mol%. The optimum mixing conditions with epoxy and yellow phosphor for white light emitting diodes were observed in a ratio of epoxy:yellow phosphor of 1:3.5. The CIE chromaticity of the white LED at the 1:3.5 ratio was X = 0.3454 and Y = 0.2449.

• Journal of Electrochemical Science and Technology
• /
• 제11권3호
• /
• pp.238-247
• /
• 2020

Some nano structured bimetallic NiPd electrocatalysts were electrodeposited on glassy carbon electrodes using a double potential step chronoamperometry. The morphology of the electrodeposited samples was investigated by field emission-scanning electron microscopy, while their compositions were evaluated using energy dispersive X-ray spectroscopy. It was observed that the electrodeposited samples contained a low Ni content, in the range of 0.80 - 7.10%. The electrodeposited samples were employed as the anode electro-catalysts for the oxidation of sodium borohydride in NaOH solution (1.0 M) using cyclic voltammetry, chronoamperometry, rotating disk electrode, and impedance spectroscopy. The number of exchanged electrons, charge transfer resistances, apparent rate constants, and double layer capacitances were calculated for the oxidation of borohydride on the prepared catalysts. According to the results obtained, the NiPd-2 sample with the lowest Ni content (0.80%), presented the highest catalytic activity for borohydride oxidation compared with the other NiPd samples as well as the pure Pd sample. The anodic peak current density was obtained to be about 1.3 times higher on the NiPd-2 sample compared with that for the Pd sample.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.163-163
• /
• 2008

반도체 소자가 고집적화 되고 고속화를 필요로 하게 됨에 따라, 기존에 사용되었던 알루미늄이나 텅스텐보다 낮은 전기저항, 높은 electro-migration resistance으로 미세한 금속배선 처리가 가능한 Cu가 주목받게 되었다. 하지만 과잉 디싱 현상과 에로젼을 유도하여 메탈라인 브리징과 단락을 초래할 있고 Cu의 단락인 islands를 남김으로서 표면 결함을 제거하는데 효과적이지 못다는 단점을 가지고 있었다. 특히 평탄화 공정시 높은 압력으로 인하여 Cu막의 하부인 ILD막의 다공성의 low-k 물질의 손상을 초래 할 수 있는 문제점을 해결하기 위하여 기존의 CMP에 전기화학을 결합시킴으로서 낮은 하력에서의 Cu 평탄화를 달성 할 수 있는 기존의 CMP 기술에 전기화학을 접목한 새로운 개념의 ECMP (electrochemical-mechanical polishing) 기술이 생겨나게 되었다. 따라서 본 논문에서는 최적화된 ECMP 공정을 위하여 I-V곡선과 CV법을 이용하여 active. passive. trans-passive 영역의 전기화학적 특징을 알아보았고. Cu막의 표면 형상을 알아보기 위해 Scanning Electron Microscopy (SEM) 측정과 Energy Dispersive Spectroscopy (EDS) 분석을 통해 금속 화학적 조성을 조사하였다.

• 한국전기전자재료학회논문지
• /
• 제19권8호
• /
• pp.732-736
• /
• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

• 한국전기전자재료학회논문지
• /
• 제15권12호
• /
• pp.1060-1064
• /
• 2002

We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.387-390
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$