• 제목/요약/키워드: Scan field width

검색결과 27건 처리시간 0.024초

저전압 초소형 전자 칼럼에서 이중 편향기의 효과 (Double-deflector effects on a low voltage microcolumn)

  • 장원권
    • 한국산학기술학회논문지
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    • 제10권10호
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    • pp.2628-2633
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    • 2009
  • 초소형 전자 칼럼에서 이중 편향기는 칼럼의 왜곡 수차의 최소화 및 FOV(field of view)의 극대화 효과를 위하여 사용하고 있다. 이러한 효과를 관찰하기 위하여 이중 편향기에 서로 반대로 전압을 인가한 상태에서 FOV와 주사 폭의 변화에 대한 실험을 진행하였으며, 최대 FOV와 주사 폭에 대한 적정 조건을 얻기 위한 각 편향기의 인가 전압과 전자 방출 팁 전압의 관계를 조사하였다. 또한 전자 방출 팁 전압에 의한 줌 기능의 선형성과 줌 한계를 측정하여 분석하였다.

두경부 토모테라피 치료 시 CT scan range에 따른 치료계획의 정확성 평가 (Accuracy evaluation of treatment plan according to CT scan range in Head and Neck Tomotherapy)

  • 권동열;김진만;채문기;박태양;서성국;김종식
    • 대한방사선치료학회지
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    • 제31권2호
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    • pp.13-24
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    • 2019
  • 목 적: 두경부 토모테라피 치료 시 다양한 이유로 CT scan range가 부족한 상황이 발생한다. CT scan range는 정확한 선량 계산에 영향을 주기 때문에 Re-CT Simulation이 좋지만 환자의 피폭선량 증가와 불편함, 치료일정 변경 등 문제점을 갖는다. 이에 본 저자는 기존 CT scan range에서 Plan setup parameter 변화를 통해 Re-CT Simulation 없이 정확한 치료계획에 필요한 최소한의 CT scan range를 평가해보고자 한다. 대상 및 방법: CT simulator(Discovery CT590 RT, GE, USA)와 In House Head & Neck Phantom을 이용하였고, Target의 끝단에서 0.25~3.0cm까지 0.25cm씩 증가시켜 CT scan range 별 이미지를 획득하였다. Target과 정상 장기를 Head & Neck Phantom에 등록하고 ACCURAY Precision® 이용하여 치료계획을 설계하였다. 처방 선량은 Daily 2.2Gy, 27 Fxs, Total Dose 59.4Gy, Target은 처방 선량의 95~107%, 정상 장기는 SMC Protocol에 맞춰 치료계획을 설계하였다. 동일한 치료계획 조건에서 Field Width(FW)와 Jaw 모드를 고려한 5가지 방법(Fixed-1cm, Fixed-2.5cm, Fixed-5cm, Dynamic-2.5cm Dynamic-5cm)과 2가지 Pitch(0.43, 0.287)의 Plan Setup parameter로 치료계획을 설계하였다. 각 치료계획에 대한 선량 전달의 정확성은 EBT3 film과 RIT(Complete Version 6.7, RIT, USA)를 이용하여 분석하였다. 결 과: Target의 처방 선량과 정상 장기의 견딤선량(Tolerance dose)을 만족한 치료계획(SMC Protocol)은 Fixed-1cm은 0.25cm 이상, Fixed-2.5cm는 0.75cm 이상, Dynamic-2.5cm는 1cm 이상, Fixed-5cm과 Dynamic-5cm인 경우는 1.75cm 이상의 Scan range가 있어야 정확한 치료계획을 할 수 있었다. 선량 전달의 정확성은 RIT로 분석한 결과 SMC Protocol을 만족한 치료계획에서 3% 미만의 오차였다. 결 론: 두경부 토모테라피 치료 시 CT scan range가 부족한 경우 Plan Setup Parameter 중 Field Width(FW)를 조절하여 정확한 치료계획을 설계할 수 있었다. 이에 본 저자가 추천한 Plan Setup Parameter를 CT scan range에 따라 적용하고 Re-CT 여부를 판단한다면 업무의 효율성 및 환자의 피폭선량을 감소시킬 수 있을 것으로 사료된다.

근접장현미경을 이용한 폴리머박막 나노리쏘그라피 공정의 특성분석 (Characteristics of Nanolithography Process on Polymer Thin-film using Near-field Scanning Optical Microscope)

  • 권상진;김필규;장원석;정성호
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.590-595
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    • 2004
  • The shape and size variations of the nanopatterns produced on a positive photoresist using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture( $P_{in}$ ), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}$ =1.2$\mu$W and V=12$\mu$m/. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage using azopolymer is discussed at the end.

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CCD 폭 측정 시스템 및 퍼지 PID를 이용한 CFWC 제어기 설계 (CFWC Scheme for Width Control using CCD Measurement System and Fuzzy PID Controller in Hot Strip Mills)

  • 박철재
    • 제어로봇시스템학회논문지
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    • 제19권11호
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    • pp.991-997
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    • 2013
  • In this paper, we propose a CFWC (CCD and fuzzy PID based width control) scheme to obtain the desired delivery width margin of a vertical rolling mill in hot strip process. A WMS(width measurement system) is composed of two line scan cameras, an edge detection algorithm, a glitch filter, and so on. A dynamic model of the mill is derived from a gauge meter equation in order to design the fuzzy PID controller. The controller is a self-learning structure to select the PID gains from the error and error rate of the width margin. The effectiveness of the proposed CFWC is verified from simulation results under a width disturbance of the entry in the mill. Using a field test, we show that the performance of the width control is improved by the proposed control scheme.

Gray Scale Plasma Display Panel with a New High-Speed Drive

  • Ryeom, Jeong-Duk
    • 조명전기설비학회논문지
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    • 제21권9호
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    • pp.7-11
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    • 2007
  • The objective of this study is to evaluate the characteristics of a newly proposed high-speed drive method for the gray scale display for high-resolution plasma display panels(PDP). In the experiment it was found that the characteristics of gray scale display are not closely affected by a priming period below 50[${\mu}s$], the width of the priming period, and that it can be driven stably from the brightest sub-field to the darkest sub-field even though a priming discharge is applied to the 1 TV-field only once. Moreover, from the experimental result, the gray scale pattern of 8-bit and 9 sub-fields was stably displayed in the experimental PDP with scan pulses having the pulse width of 0.7[${\mu}s$]. An address voltage margin of about 25[V] and a sustain voltage margin of about 10[V] was obtained.

He-Cd 레이저와 근접장현미경을 이용한 폴리머박막 나노리소그라피 공정의 특성분석 (Characteristics of nanolithograpy process on polymer thin-film using near-field scanning optical microscope with a He-Cd laser)

  • 권상진;김필규;천채민;김동유;장원석;정성호
    • 한국레이저가공학회지
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    • 제7권3호
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    • pp.37-46
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    • 2004
  • The shape and size variations of the nanopatterns produced on a polymer film using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture($P_{in}$), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}=1.2{\mu}W\;and\;V=12{\mu}m/s$. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage is discussed.

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YBCO coated conductor with a single buffer layer of Yttrium Oxide

  • Park, Chan;Dongqi Shi;Kyujeong Song;Rokkil Ko;Park, Soojeong;Yoo, Sang-Im
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권3호
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    • pp.20-22
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    • 2003
  • Y$_2$O$_3$ films were pulsed laser deposited on cube textured Ni and Ni-W substrates to be used as a single buffer layer of YBCO coated conductor. Initial deposition of $Y_2$O$_3$ films was performed in a reducing atmosphere, and subsequent deposition was done in the base pressure of the chamber and oxygen atmosphere. The $Y_2$O$_3$ films have a strong cube texture (The full width at half maximum of the ø-scan of $Y_2$O$_3$ was 8.4 which was the same as that of metal substrate) and smooth crack-free microstructure. The biaxially textured YBCO films (The full width at half maximum of the ø-scan was 10.2) pulsed laser deposited on the $Y_2$O$_3$/metal exhibited Tc(R=0) of 86.5K and Jc of 0.7 MA/cm2 at 77K in self field, representing that the $Y_2$O$_3$ single buffer layer is an efficient diffusion barrier of Ni and thus very promising for the achievement of high-Jc YBCO coated conductor.

Simple Near-Field Optical Recording Using Bent Cantilever Probes

  • Kim, Jeong-Yong;Song, Ki-Bong;Park, Kang-Ho;Lee, Hyo-Won;Kim, Eun-Kyoung
    • ETRI Journal
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    • 제24권3호
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    • pp.205-210
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    • 2002
  • This paper describes our high-density near-field optical recording using bent cantilever fiber probes installed in an atomic force microscope. We conducted a near-field reading of nano-scale hole patterns with a 100 nm spatial resolution and a 25 ${\mu}m$/s scan speed; this implies a capability of a data reading density of 60 Gb/$in^2$ with a 0.25 kbps data transfer rate. In addition, we investigated re-writable near-field recording on photochromic diarylethene films. We successfully recorded erasable memory bits having a minimum width of 600 nm in a writing time as short as 30ms. We found that using a cantilever probe simplifies the setup and operation of the near-field optical recording system and may offer multifunctional recording capabilities.

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COMPARISON OF LOS DOPPLER VELOCITIES AND NON-THERMAL LINE WIDTHS IN THE OFF-LIMB SOLAR CORONA MEASURED SIMULTANEOUSLY BY COMP AND HINODE/EIS

  • Lee, Jae-Ok;Lee, Kyoung-Sun;Seough, Jungjoon;Cho, Kyung-Suk
    • 천문학회지
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    • 제54권2호
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    • pp.49-60
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    • 2021
  • Observations of line of sight (LOS) Doppler velocity and non-thermal line width in the off-limb solar corona are often used for investigating the Alfvén wave signatures in the corona. In this study, we compare LOS Doppler velocities and non-thermal line widths obtained simultaneously from two different instruments, Coronal Multichannel Polarimeter (CoMP) and Hinode/EUV Imaging Spectrometer (EIS), on various off-limb coronal regions: flaring and quiescent active regions, equatorial quiet region, and polar prominence and plume regions observed in 2012-2014. CoMP provides the polarization at the Fe xiii 10747 Å coronal forbidden lines which allows their spectral line intensity, LOS Doppler velocity, and line width to be measured with a low spectral resolution of 1.2 Å in 2-D off limb corona between 1.05 and 1.40 RSun, while Hinode/EIS gives us the EUV spectral information with a high spectral resolution (0.025 Å) in a limited field of view raster scan. In order to compare them, we make pseudo raster scan CoMP maps using information of each EIS scan slit time and position. We compare the CoMP and EIS spectroscopic maps by visual inspection, and examine their pixel to pixel correlations and percentages of pixel numbers satisfying the condition that the differences between CoMP and EIS spectroscopic quantities are within the EIS measurement accuracy: ±3 km s-1 for LOS Doppler velocity and ±9 km s-1 for non-thermal width. The main results are summarized as follows. By comparing CoMP and EIS Doppler velocity distributions, we find that they are consistent with each other overall in the active regions and equatorial quiet region (0.25 ≤ CC ≤ 0.7), while they are partially similar to each other in the overlying loops of prominences and near the bottom of the polar plume (0.02 ≤ CC ≤ 0.18). CoMP Doppler velocities are consistent with the EIS ones within the EIS measurement accuracy in most regions (≥ 87% of pixels) except for the polar region (45% of pixels). We find that CoMP and EIS non-thermal width distributions are similar overall in the active regions (0.06 ≤ CC ≤ 0.61), while they seem to be different in the others (-0.1 ≤ CC ≤ 0.00). CoMP non-thermal widths are similar to EIS ones within the EIS measurement accuracy in a quiescent active region (79% of pixels), while they do not match in the other regions (≤ 61% of pixels); the CoMP observations tend to underestimate the widths by about 20% to 40% compared to the EIS ones. Our results demonstrate that CoMP observations can provide reliable 2-D LOS Doppler velocity distributions on active regions and might provide their non-thermal width distributions.

A New SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC

  • Son, Won-So;Kim, Sang-Gi;Sohn, Young-Ho;Choi, Sie-Young
    • ETRI Journal
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    • 제26권1호
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    • pp.7-13
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    • 2004
  • To improve the characteristics of breakdown voltage and specific on-resistance, we propose a new structure for a LDMOSFET for a PDP scan driver IC based on silicon-on-insulator with a trench under the gate in the drift region. The trench reduces the electric field at the silicon surface under the gate edge in the drift region when the concentration of the drift region is high, and thereby increases the breakdown voltage and reduces the specific on-resistance. The breakdown voltage and the specific on-resistance of the fabricated device is 352 V and $18.8 m{\Omega}{\cdot}cm^2$ with a threshold voltage of 1.0 V. The breakdown voltage of the device in the on-state is over 200 V and the saturation current at $V_{gs}=5V$ and $V_{ds}$=20V is 16 mA with a gate width of $150{\mu}m$.

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