• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.6
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• pp.51-57
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• 1997

Low-voltage, low-power gm-C filter utilizing newly dveloped operational transconductance amplifier (OTA) is described in this paper. The OTA has only two MOS transistors in saturation region between $V_{DD}$ and GND, and thus low voltage operation is possible. To improve the linearity, the OTA is made differential. Common mode feedback, essential in differential circuit, requires no additional implemented in $0.8\mu\textrm{m}$ CMOS process, and the center frequency can be controlled from 15MHz with 3.0V single power supply.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.20-25
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• 1989

The nonlinear, time dependent photon transport equations of Frantz and Nodvik, which describe the amplification of an optical pulse in an active medium, are modified to a simpler equation which describes only the amplification of energy. with this equation, the output energy of the high power YLF(Nd3+)-Phosphate Glass(Nd3+) Laser System is calculated. When the stored energy density Est is 0.10J/㎤, 0.16J/㎤, 0.228J/㎤, and 0.50J/㎤, and with the assumption of uniform population inversion density, the final output energy of this laser system is 5.38J, 176J, 317J, and 283J, respectively. The gain saturation causes distortion of the output beam. This phenomenon is described in detail at the first three rod amplifier systems in the case of E=0.228J/㎤. The peak current and decay time constant of the flashlamps, which are used to obtain population inversion in the active medium, are investigated. The flashlamp driving circuit which has optimum operational performance should have {{{{ SQRT { LC} }} time about 100$\mu$sec.

• Journal of the Korean Magnetic Resonance Society
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• v.23 no.3
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• pp.81-86
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• 2019

Overhauser dynamic nuclear polarization (O-DNP) has been an efficient method to boost the thermal nuclear polarization in liquids at room temperature. However, O-DNP for a benchtop NMR using a permanent magnet has remained unexplored yet. In this work, we report the development of an O-DNP system adopting a permanent magnet of 1.6 T. Q-band (~43 GHz) high-power amplifier produced 6 W microwave for saturation. Instead of resonator, we used an open-type antenna for the microwave irradiation. For several representative small molecules, we measured the concentration and frequency dependences of the enhancement factor. This work paves the way for the development of a benchtop DNP-NMR system overcoming its disadvantage of low quality signal when using a permanent magnet.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.8-14
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• 1999

The active devices used at microwave frequency have the different phase shift according to input power. Especially, The difference of the phase shift is large in the saturation region of the amplifier. In this paper, we disigned the phase control system for fixing the different phase shift at device. With the high frequency nonlinear amplifier, we fabricated such system that the phase shift to be fixed automatically using the varible phase shifter. The variable phase shifter fixed total phase variation of the circuit using the information that was obtained from the comparison of imputsignal phase with output signal phase. Even though the input signal is 2-tone or FM type, we could estimate and also fix the phase variation on DUT Dynamic range is about 10dB. It has been experimented at 1960MHz using Teflon (H=31mil, ${\varepsilon}r$=3.2)

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.6
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• pp.641-647
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• 2011

This paper describes a design and fabrication of SDLVA. The SDLVA operates 0.5~2.0 GHz with -70~0 dBm dynamic range. The SDLVA is consisted of 5-stage RF block, 2-stage detector block and summation circuit using clamping op-amp to improve video linearity. The result of measure, SDLVA of RF path has over 73 dB small-signal gain and 10.1~12.2 dBm saturation power. The video path has 25 mV/ dB${\pm}$1.0 mV and under ${\pm}$1.5 dB video linearity.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.160-163
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• 2009

HPA is one of the most essential device in wireless communication systems. However, because of nonlinear characteristic of HPA transmit signal is distorted with both amplitude and phase, this distortion leads to deepening adjacent channel interference. So a technique to change the nonlinear characteristic with linear characteristic is needed. In this paper, Among all techniques, we adopts a polynomial pre-distortion technique. Pre-distorted signal by pre-distorter has opposite characteristic with HPA. In result, the signal passed through pre-distorter and HPA has linear characteristic. But the accuracy of opposite characteristic of HPA is decreased at near portion of saturation point. So we improve the accuracy of opposite characteristic of HPA by using PAPR reduction method. In this paper, an adaptive polynomial pre-distortion technique is introduced to counterbalance the nonlinear characteristic of the transmit power amplifier, and a PAPR reduction method is introduced to increase efficiency of polynomial pre-distorter.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.47 no.5
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• pp.388-396
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• 2019

This paper describes the RF(Radio Frequency) interference on the GNSS receiver due to the S-band signals transmitted from the transmitters in the Test Launch Vehicle, and analyzes the cause of the RF interference. Due to the S-band signals that have relatively high power levels compared with GNSS signals, an LNA(Low Noise Amplifier) in the active GNSS antenna was saturated, and the intermodulation signal within GNSS in-bands was produced in the LNA whenever two S-band signals were received from the GNSS antenna. For these reasons, the C/N0 of the satellite signals in the GNSS receiver was attenuated severely. The design of the LNA was changed in order to protect the RF interference due to the S-band signals and the suppression capability of the RF interference was confirmed in the new LNA through the comparison of the old LNA.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.880-886
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• 2007

We have proposed a new "hybrid" envelope elimination and restoration(EER) transmitter architecture using an efficiency optimized power amplifier(PA) and modified bias modulator. The efficiency of the PA at the average drain voltage is very important for the overall transmitter efficiency because the PA operates mostly at the average power region of the modulation signal. Accordingly, the efficiency of the PA has been optimized at the region. Besides, the bias modulator has been accompanied with the emitter follower for the minimization of memory effect. A saturation amplifier, class $F^{-1}$ is built using a 5-W PEP LDMOSFET for forward-link single-carrier wideband code-division multiple-access(WCDMA) at 1-GHz. For the interlock experiment, the bias modulator has been built with the efficiency of 64.16% and peak output voltage of 31.8 V. The transmitter with the proposed PA and bias modulator has been achieved an efficiency of 44.19%, an improvement of 8.11%. Besides, the output power is enhanced to 32.33 dBm due to the class F operation and the PAE is 38.28% with ACLRs of -35.9 dBc at 5-MHz offset. These results show that the proposed architecture is a very good candidate for the linear and efficient high power transmitter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.21-27
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• 2004

In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.